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EnglishIn this paper, we demonstrate a fully integrated linear voltage regulator in silicon carbide NPN bipolar transistor technology, operational from 25 degrees C up to 500 degrees C. For 15-mA load current, this regulator provides a stable output voltage with <2% variation in the temperature range 25 degrees C-500 degrees C. For both line and load regulations, degradation of 50% from 25 degrees C to 300 degrees C and improvement of 50% from 300 degrees C to 500 degrees C are observed. The transient response measurements of the regulator show robust behavior in the temperature range 25 degrees C-500 degrees C.
| Titolo: | 500 °c bipolar SiC linear voltage regulator |
| Autori: | |
| Data di pubblicazione: | 2015 |
| Rivista: | |
| Abstract: | In this paper, we demonstrate a fully integrated linear voltage regulator in silicon carbide NPN bipolar transistor technology, operational from 25 degrees C up to 500 degrees C. For 15-mA load current, this regulator provides a stable output voltage with <2% variation in the temperature range 25 degrees C-500 degrees C. For both line and load regulations, degradation of 50% from 25 degrees C to 300 degrees C and improvement of 50% from 300 degrees C to 500 degrees C are observed. The transient response measurements of the regulator show robust behavior in the temperature range 25 degrees C-500 degrees C. |
| Handle: | http://hdl.handle.net/11390/1102642 |
| Appare nelle tipologie: | 1.1 Articolo in rivista |
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| File | Descrizione | Tipologia | Licenza | |
|---|---|---|---|---|
| 07084110.pdf | Abstract | Non pubblico | Accesso ristretto Richiedi una copia |
http://hdl.handle.net/11390/1102642
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