We report results of drift velocity monitoring in silicon drift detectors, obtained in beam test conditions using MOS charge injectors. We are able to correct velocity variations as small as 0.1% due to temperature variations of the order of 0.1 K and consequently maintain an optimal space resolution. (C) 2000 Elsevier Science B.V. All rights reserved.

Drift velocity monitoring of SDDs using MOS charge injectors

VACCHI, Andrea
2000-01-01

Abstract

We report results of drift velocity monitoring in silicon drift detectors, obtained in beam test conditions using MOS charge injectors. We are able to correct velocity variations as small as 0.1% due to temperature variations of the order of 0.1 K and consequently maintain an optimal space resolution. (C) 2000 Elsevier Science B.V. All rights reserved.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11390/1125227
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