Dopant fluctuations in silicon wafers are responsible for systematic errors in the determination of the particle crossing point in silicon drift detectors. In this paper, we report on the first large-scale measurement of this effect by means of a particle beam. A significant improvement of the anodic resolution has been obtained by correcting for these systematic deviations. (C) 2001 Elsevier Science B.V. All rights reserved.
Correction of dopant concentration fluctuation effects in silicon drift detectors
VACCHI, Andrea
2001-01-01
Abstract
Dopant fluctuations in silicon wafers are responsible for systematic errors in the determination of the particle crossing point in silicon drift detectors. In this paper, we report on the first large-scale measurement of this effect by means of a particle beam. A significant improvement of the anodic resolution has been obtained by correcting for these systematic deviations. (C) 2001 Elsevier Science B.V. All rights reserved.File in questo prodotto:
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