The peculiarity of the drift chamber prototype presented in this paper is the high voltage divider, which is implanted in the entire sensitive zone, thus, it has at the same time the function of drift electrode. This brings some advantage: (1) there is no metallization in the sensitive zone, hence, the detector can have a wider spectrum of applications (e.g, detection of soft X-rays and low-energy electrons); (2) the mask design and detector fabrications are made simpler; (3) a uniform power dissipation from the divider is assured. This detector is a "butterfly" bi-directional structure with a drift length of 16 mm for each half. Time-of-flight measurements in order to check the response uniformity of the suggested detector topography were performed by injecting charge with the use of a focused infrared laser. The rather good linearity and uniformity of the drift in different parts of the sensitive area are demonstrated. (C) 1998 Elsevier Science B,V. All rights reserved.
|Titolo:||Silicon drift detector with a continuous implanted resistor as divider-drift electrode|
|Data di pubblicazione:||1998|
|Appare nelle tipologie:||1.1 Articolo in rivista|