By use of extensive simulation, it is shown how a spread of the aluminium metallization over the intercathodic field oxide sensibly lowers the electric field at reverse biased p(+) n junctions, thus allowing use of higher drift fields. Based on the simulation results, the layout of a few test structures implementing alternative technological choices has been defined. The fabrication of these prototype detectors is presently in progress.
USE OF FIELD PLATE IN A LINEAR SILICON DRIFT DETECTOR (SDD)
VACCHI, Andrea
1995-01-01
Abstract
By use of extensive simulation, it is shown how a spread of the aluminium metallization over the intercathodic field oxide sensibly lowers the electric field at reverse biased p(+) n junctions, thus allowing use of higher drift fields. Based on the simulation results, the layout of a few test structures implementing alternative technological choices has been defined. The fabrication of these prototype detectors is presently in progress.File in questo prodotto:
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