By use of extensive simulation, it is shown how a spread of the aluminium metallization over the intercathodic field oxide sensibly lowers the electric field at reverse biased p(+) n junctions, thus allowing use of higher drift fields. Based on the simulation results, the layout of a few test structures implementing alternative technological choices has been defined. The fabrication of these prototype detectors is presently in progress.
|Titolo:||USE OF FIELD PLATE IN A LINEAR SILICON DRIFT DETECTOR (SDD)|
|Data di pubblicazione:||1995|
|Appare nelle tipologie:||1.1 Articolo in rivista|