Dose-Rate Sensitivity of 65-nm MOSFETs Exposed to Ultrahigh Doses

BORGHELLO, GIULIO; Federico, Faccio; Edoardo, Lerario; Stefano, Michelis; Szymon, Kulis; Fleetwood, Daniel M.; Schrimpf, Ronald D.; Simone, Gerardin; Alessandro, Paccagnella; Stefano, Bonaldo

doi:10.1109/TNS.2018.2828142

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The radiation response of complementary metal- oxide-semiconductor (CMOS) gate oxides is typically insensitive to true dose-rate effects, but damage in deep-sub-micrometer technologies is dominated by ionization mechanisms in thick isolation oxides surrounding the transistors. Recent results in 65-nm FETs demonstrated that performance degradation in ultrahigh total ionizing dose (TID) experiments is due to defects in the isolation shallow trench isolation oxide or in the materials composing the lightly doped drain spacers. These insulators are thick, deposited, and crossed by a low electric field, characteristics similar to those typical of passivation oxides in linear bipolar technologies for which an enhanced low-doserate sensitivity (ELDRS) has been observed and systematically studied. We report in this paper the clear evidence of a dose-rate sensitivity of the TID-induced damage in both 130and 65-nm CMOS technologies exposed to different radiation sources (X-rays and γ-rays from a60Co source). This sensitivity is attributed to mechanisms similar to those explaining ELDRS in bipolar devices and represents a significant challenge to the definition of a qualification procedure for circuits to be used in extreme radiation environments.

Titolo:	Dose-Rate Sensitivity of 65-nm MOSFETs Exposed to Ultrahigh Doses
Autori:	BORGHELLO, GIULIO Federico, Faccio Edoardo, Lerario Stefano, Michelis Szymon, Kulis Fleetwood, Daniel M. Schrimpf, Ronald D. Simone, Gerardin Alessandro, Paccagnella Stefano, Bonaldo mostra contributor esterni nascondi contributor esterni
Data di pubblicazione:	2018
Rivista:	IEEE TRANSACTIONS ON NUCLEAR SCIENCE
Abstract:	The radiation response of complementary metal- oxide-semiconductor (CMOS) gate oxides is typically insensitive to true dose-rate effects, but damage in deep-sub-micrometer technologies is dominated by ionization mechanisms in thick isolation oxides surrounding the transistors. Recent results in 65-nm FETs demonstrated that performance degradation in ultrahigh total ionizing dose (TID) experiments is due to defects in the isolation shallow trench isolation oxide or in the materials composing the lightly doped drain spacers. These insulators are thick, deposited, and crossed by a low electric field, characteristics similar to those typical of passivation oxides in linear bipolar technologies for which an enhanced low-doserate sensitivity (ELDRS) has been observed and systematically studied. We report in this paper the clear evidence of a dose-rate sensitivity of the TID-induced damage in both 130and 65-nm CMOS technologies exposed to different radiation sources (X-rays and γ-rays from a60Co source). This sensitivity is attributed to mechanisms similar to those explaining ELDRS in bipolar devices and represents a significant challenge to the definition of a qualification procedure for circuits to be used in extreme radiation environments.
Handle:	http://hdl.handle.net/11390/1139283
Appare nelle tipologie:	1.1 Articolo in rivista

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