The paper deals with the evolution of the microstructure of AlSi10Mg alloy obtained by laser powder bed fusion (LPBF), as a function of the post-processing heat treatment temperature. This was approached by complementary methods including FE-scanning electron microscopy, scanning Kelvin probe force microscopy and exo-electron emission techniques. The fast cooling rate of the LPBF process as compared to traditional casting produces a very fine microstructure with high mechanical properties and corrosion resistance. However, the LPBF-AlSi10Mg alloy can be susceptible to selective corrosion at the edge of the melt pools generated by the laser scan tracks. Post-process thermal treatments of the Al alloy induce a marked modification of the silicon network at melt pool edges, in particular at high temperature such as 400◦ C. It was found that this is associated to a more homogeneous distribution of Volta potential. Analysis of exo-electron emission confirms the silicon diffusion during thermal treatment. The modification of the silicon network structure of the LPBF-AlSi10Mg during thermal treatment reduces the susceptibility to selective corrosion.

Effect of heat treatment on microstructure and selective corrosion of lpbf-alsi10mg by means of skpfm and exo-electron emission

Andreatta F.;Fedrizzi L.;
2021

Abstract

The paper deals with the evolution of the microstructure of AlSi10Mg alloy obtained by laser powder bed fusion (LPBF), as a function of the post-processing heat treatment temperature. This was approached by complementary methods including FE-scanning electron microscopy, scanning Kelvin probe force microscopy and exo-electron emission techniques. The fast cooling rate of the LPBF process as compared to traditional casting produces a very fine microstructure with high mechanical properties and corrosion resistance. However, the LPBF-AlSi10Mg alloy can be susceptible to selective corrosion at the edge of the melt pools generated by the laser scan tracks. Post-process thermal treatments of the Al alloy induce a marked modification of the silicon network at melt pool edges, in particular at high temperature such as 400◦ C. It was found that this is associated to a more homogeneous distribution of Volta potential. Analysis of exo-electron emission confirms the silicon diffusion during thermal treatment. The modification of the silicon network structure of the LPBF-AlSi10Mg during thermal treatment reduces the susceptibility to selective corrosion.
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11390/1213964
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