CINECA IRIS Institutional Research Information System
IRIS è la piattaforma adottata dall’Università degli Studi di Udine per gestire l’archivio aperto dei prodotti della ricerca. L’archivio contiene articoli, contributi in volume, monografie, interventi pubblicati in atti di convegno, Tesi di dottorato e altri materiali.
EnglishWe present the results of first-principles calculations of the properties of neutral (H0) and charged (H+ and H-) hydrogen in bulk GaAs. The equilibrium sites are determined, and the electronic properties for the equilbrium positions are studied. H+ behaves as a deep donor and prefers to stay in a high valence charge region which includes the bond center. H- behaves as a deep acceptor and prefers the low valence charge region near a tetrahedral site. H0 has an amphoteric behaviour depending on the site it occupies. We compare our results with the results of calculations for H in Si.
| Titolo: | 1ST PRINCIPLES CALCULATIONS OF HYDROGEN IN BULK GAAS |
| Autori: | |
| Data di pubblicazione: | 1991 |
| Rivista: | |
| Abstract: | We present the results of first-principles calculations of the properties of neutral (H0) and charged (H+ and H-) hydrogen in bulk GaAs. The equilibrium sites are determined, and the electronic properties for the equilbrium positions are studied. H+ behaves as a deep donor and prefers to stay in a high valence charge region which includes the bond center. H- behaves as a deep acceptor and prefers the low valence charge region near a tetrahedral site. H0 has an amphoteric behaviour depending on the site it occupies. We compare our results with the results of calculations for H in Si. |
| Handle: | http://hdl.handle.net/11390/679833 |
| Appare nelle tipologie: | 1.1 Articolo in rivista |
File in questo prodotto:
http://hdl.handle.net/11390/679833
Copyright © 2018