This paper presents experimental evidence of relevant three-dimensional (3-D) effects in CMOS latch-up obtained by means of novel multicontact test structures. It is also shown that "quasi"-two-dimensional (2-D) experimental data in good agreement with numerical simulations can be achieved only by limiting the analysis to the central sections of wide experimental devices.
Three dimensional distribution of CMOS Latch-up current
SELMI, Luca
1987-01-01
Abstract
This paper presents experimental evidence of relevant three-dimensional (3-D) effects in CMOS latch-up obtained by means of novel multicontact test structures. It is also shown that "quasi"-two-dimensional (2-D) experimental data in good agreement with numerical simulations can be achieved only by limiting the analysis to the central sections of wide experimental devices.File in questo prodotto:
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1987_IEEELetters_Sangiorgi_ThreeDimensionalDistribution.pdf
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