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EnglishThis paper presents experimental evidence of relevant three-dimensional (3-D) effects in CMOS latch-up obtained by means of novel multicontact test structures. It is also shown that "quasi"-two-dimensional (2-D) experimental data in good agreement with numerical simulations can be achieved only by limiting the analysis to the central sections of wide experimental devices.
Three dimensional distribution of CMOS Latch-up current / SANGIORGI E; RICCO B; SELMI L. - In: IEEE ELECTRON DEVICE LETTERS. - ISSN 0741-3106. - STAMPA. - 8:4(1987), pp. 154-156.
| Titolo: | Three dimensional distribution of CMOS Latch-up current | |
| Autori: | ||
| Data di pubblicazione: | 1987 | |
| Rivista: | ||
| Citazione: | Three dimensional distribution of CMOS Latch-up current / SANGIORGI E; RICCO B; SELMI L. - In: IEEE ELECTRON DEVICE LETTERS. - ISSN 0741-3106. - STAMPA. - 8:4(1987), pp. 154-156. | |
| Abstract: | This paper presents experimental evidence of relevant three-dimensional (3-D) effects in CMOS latch-up obtained by means of novel multicontact test structures. It is also shown that "quasi"-two-dimensional (2-D) experimental data in good agreement with numerical simulations can be achieved only by limiting the analysis to the central sections of wide experimental devices. | |
| Handle: | http://hdl.handle.net/11390/681821 | |
| Appare nelle tipologie: | 1.1 Articolo in rivista |
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| File | Descrizione | Tipologia | Licenza | |
|---|---|---|---|---|
| 1987_IEEELetters_Sangiorgi_ThreeDimensionalDistribution.pdf | Documento in Post-print | Non pubblico | Accesso ristretto Richiedi una copia |
http://hdl.handle.net/11390/681821
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