In this work recently developed 2D Multi-Subband Monte Carlo device simulator and a Non-Equilibrium Green's functions solver are compared focusing on the source-channel barrier height modeling in double gate SOI MOSFETs.
Analysis of transport properties of nanoscale SOI devices: Full Quantum versus Semi Classical models
LUCCI, Luca;PALESTRI, Pierpaolo;ESSENI, David;SELMI, Luca;
2007-01-01
Abstract
In this work recently developed 2D Multi-Subband Monte Carlo device simulator and a Non-Equilibrium Green's functions solver are compared focusing on the source-channel barrier height modeling in double gate SOI MOSFETs.File in questo prodotto:
| File | Dimensione | Formato | |
|---|---|---|---|
|
2007_03_EUROSOI_Lucci_AnalysisTransportProperties.pdf
non disponibili
Tipologia:
Documento in Post-print
Licenza:
Non pubblico
Dimensione
219.38 kB
Formato
Adobe PDF
|
219.38 kB | Adobe PDF | Visualizza/Apri Richiedi una copia |
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
