In this work recently developed 2D Multi-Subband Monte Carlo device simulator and a Non-Equilibrium Green's functions solver are compared focusing on the source-channel barrier height modeling in double gate SOI MOSFETs.
Analysis of transport properties of nanoscale SOI devices: Full Quantum versus Semi Classical models
LUCCI, Luca;PALESTRI, Pierpaolo;ESSENI, David;SELMI, Luca;
2007-01-01
Abstract
In this work recently developed 2D Multi-Subband Monte Carlo device simulator and a Non-Equilibrium Green's functions solver are compared focusing on the source-channel barrier height modeling in double gate SOI MOSFETs.File in questo prodotto:
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