This paper presents a new self-consistent Multi- Subband Monte Carlo (MSMC) simulator design to investigate quasi-ballistic transport in nano p-MOSFETs. The simulator adopts an accurate analytical description of the warped hole subbands. A first comparison between n− and p−MOSFET performance is reported.
A New Multi Subband Monte Carlo Simulator for Nano p-MOSFETs
ESSENI, David;PALESTRI, Pierpaolo;SELMI, Luca
2008-01-01
Abstract
This paper presents a new self-consistent Multi- Subband Monte Carlo (MSMC) simulator design to investigate quasi-ballistic transport in nano p-MOSFETs. The simulator adopts an accurate analytical description of the warped hole subbands. A first comparison between n− and p−MOSFET performance is reported.File in questo prodotto:
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