Graphene’s conductivity at optical frequencies can be varied upon injection of carriers. In the present paper, this effect is used to modulate losses of an optical wave traveling inside a ring cavity. This way an optical modulator based on the critical–coupling concept first introduced by Yariv can be realized. Through numerical simulations, we show that a modulator featuring a bandwidth as large as 100 GHz can be designed with switching energy in the order of few fJ per bit. Also, we show that operations with driving voltages below 1.2 volt could be obtained, thus making the proposed modulator compatible with requirements of low–voltage CMOS technology.

Graphene–assisted critically–coupled optical ring modulator

MIDRIO, Michele;BOSCOLO NALE, Stefano;
2012-01-01

Abstract

Graphene’s conductivity at optical frequencies can be varied upon injection of carriers. In the present paper, this effect is used to modulate losses of an optical wave traveling inside a ring cavity. This way an optical modulator based on the critical–coupling concept first introduced by Yariv can be realized. Through numerical simulations, we show that a modulator featuring a bandwidth as large as 100 GHz can be designed with switching energy in the order of few fJ per bit. Also, we show that operations with driving voltages below 1.2 volt could be obtained, thus making the proposed modulator compatible with requirements of low–voltage CMOS technology.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11390/881505
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