In this paper we follow a semiclassical approach based on the Boltzmann Transport Equation (BTE) to simulate and compare with experiments the low-field mobility (μ) and the high-field drift velocity (vd) of graphene nano-ribbons (GNRs) and graphene bilayers (GbLs). It is found that remote phonons originating in the substrate have a large impact on the mobility, whereas their impact on the saturation velocity is smaller than predicted by recently proposed simplified model.

Low-Field Mobility and High-Field Drift Velocity in Graphene Nanoribbons and Graphene Bilayers

BRESCIANI, Marco;PAUSSA, Alan;PALESTRI, Pierpaolo;ESSENI, David;SELMI, Luca
2010-01-01

Abstract

In this paper we follow a semiclassical approach based on the Boltzmann Transport Equation (BTE) to simulate and compare with experiments the low-field mobility (μ) and the high-field drift velocity (vd) of graphene nano-ribbons (GNRs) and graphene bilayers (GbLs). It is found that remote phonons originating in the substrate have a large impact on the mobility, whereas their impact on the saturation velocity is smaller than predicted by recently proposed simplified model.
2010
9781442474185
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11390/881989
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