A conventional Monte-Carlo simulator has been extended to include electrostatic and transport effects that are most relevant for the analysis of nano-scale MOSFETs with either bulk or single and double gate SOI architecture and silicon film thickness down to approximately 10nm. Corrections to the self-consistent electrostatic potential and a new model for the surface roughness scattering have been included. The effectiveness of the approach has been tested simulating carrier transport in a 25nm double gate SOI MOSFET.
An improved semiclassical Monte-Carlo approach for nano-scale MOSFET simulation
PALESTRI, Pierpaolo;ESSENI, David;SELMI, Luca
2004-01-01
Abstract
A conventional Monte-Carlo simulator has been extended to include electrostatic and transport effects that are most relevant for the analysis of nano-scale MOSFETs with either bulk or single and double gate SOI architecture and silicon film thickness down to approximately 10nm. Corrections to the self-consistent electrostatic potential and a new model for the surface roughness scattering have been included. The effectiveness of the approach has been tested simulating carrier transport in a 25nm double gate SOI MOSFET.File in questo prodotto:
| File | Dimensione | Formato | |
|---|---|---|---|
|
2004_03_ULIS_Palestri_ImprovedSemiClassical.pdf
non disponibili
Tipologia:
Documento in Post-print
Licenza:
Non pubblico
Dimensione
402.56 kB
Formato
Adobe PDF
|
402.56 kB | Adobe PDF | Visualizza/Apri Richiedi una copia |
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
