A recently developed self-consistent Monte-Carlo (MC) simulator of confined electron's transport in the inversion layer of nano-MOSFETs is used to analyze three nano-scale ultra-thin body (UTB) SOI MOSFETs. The effect of the subband structure and carrier degeneracy as well as the relative importance of different scattering mechanisms is discussed.
Simulation of Double-Gate nano-MOSFETs with the Multi-subband Monte Carlo Method
LUCCI, Luca;PALESTRI, Pierpaolo;ESSENI, David;SELMI, Luca
2006-01-01
Abstract
A recently developed self-consistent Monte-Carlo (MC) simulator of confined electron's transport in the inversion layer of nano-MOSFETs is used to analyze three nano-scale ultra-thin body (UTB) SOI MOSFETs. The effect of the subband structure and carrier degeneracy as well as the relative importance of different scattering mechanisms is discussed.File in questo prodotto:
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