We present a Monte Carlo simulator for RF graphene FETs including the dominant scattering mechanisms and a simple model for band-to-band tunneling. We found that in state-ofthe- art devices scattering is relevant and degrades the cut-off frequency compared to the predictions of ballistic models.
Simulation of graphene nanoscale RF transistors including scattering and generation/recombination mechanisms
PALESTRI, Pierpaolo;ESSENI, David;SELMI, Luca
2011-01-01
Abstract
We present a Monte Carlo simulator for RF graphene FETs including the dominant scattering mechanisms and a simple model for band-to-band tunneling. We found that in state-ofthe- art devices scattering is relevant and degrades the cut-off frequency compared to the predictions of ballistic models.File in questo prodotto:
Non ci sono file associati a questo prodotto.
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.


