This paper examines, by means of multi-subband-Monte-Carlo (MSMC) simulations, the prediction of the well known compact formula for back-scattering in nanoMOSFETs, analyzing the effect of carrier degeneracy and complex scattering mechanisms on the back-scattering. The paper also addresses the definition of an appropriate mean-free-path and its relationship to the low-field mobility
Multi-Subband-Monte-Carlo investigation of the mean free path and of the kT layer in degenerated quasi ballistic nanoMOSFETs
PALESTRI, Pierpaolo;ESSENI, David;LUCCI, Luca;SELMI, Luca
2006-01-01
Abstract
This paper examines, by means of multi-subband-Monte-Carlo (MSMC) simulations, the prediction of the well known compact formula for back-scattering in nanoMOSFETs, analyzing the effect of carrier degeneracy and complex scattering mechanisms on the back-scattering. The paper also addresses the definition of an appropriate mean-free-path and its relationship to the low-field mobilityFile in questo prodotto:
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