This paper aims to review important theoretical and experimental aspects of both electrostatics and channel mobility in High-K Metal Gate UTBB-FDSOI MOSFETs. A simulation chain, including advanced quantum solvers, and semi-empirical Technology Computer Assisted Design (TCAD) tools is presented.
Mobility in high-K metal gate UTBB-FDSOI devices: From NEGF to TCAD perspectives
NIER, OLIVER;PALESTRI, Pierpaolo;ESSENI, David;
2013-01-01
Abstract
This paper aims to review important theoretical and experimental aspects of both electrostatics and channel mobility in High-K Metal Gate UTBB-FDSOI MOSFETs. A simulation chain, including advanced quantum solvers, and semi-empirical Technology Computer Assisted Design (TCAD) tools is presented.File in questo prodotto:
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