This work presents the technological development and characterization of n-channel fully depleted high-k dielectric FinFETs (Fin Field Effect Transistor) for applications in a liquid environment. Herein, we provide a systematic approach based on Finite Element Analysis for a high-control fabrication process of vertical Si-fins on bulk and we provide many useful fabrication expedients. Metal gate FinFETs have been successfully electrically characterized, showing excellent subthreshold slope SS = 72 mV/dec and high Ion/Ioff.
Technological development of high-k dielectric FinFETs for liquid environment
SCARBOLO, Paolo;
2014-01-01
Abstract
This work presents the technological development and characterization of n-channel fully depleted high-k dielectric FinFETs (Fin Field Effect Transistor) for applications in a liquid environment. Herein, we provide a systematic approach based on Finite Element Analysis for a high-control fabrication process of vertical Si-fins on bulk and we provide many useful fabrication expedients. Metal gate FinFETs have been successfully electrically characterized, showing excellent subthreshold slope SS = 72 mV/dec and high Ion/Ioff.File in questo prodotto:
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Technological development of high k dielectric FinFET for liquid environments - Rigante - 2014.pdf
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