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Titolo Data di pubblicazione Autore(i) File
Hot-holes generation and transport in n-MOSFETS: a Monte Carlo investigation 1-gen-1990 F., Venturi; C., Fiegna; Abramo, Antonio; E., Sangiorgi; B., Riccò
A new microscopic model for hole transport in silicon with application to sub-micron LDD MOSFETs 1-gen-1991 Abramo, Antonio; C., Fiegna; F., Venturi; R., Brunetti; E., Sangiorgi; C., Bergonzoni; B., Riccò
Optimization of physical parameters for high energy transport simulation in Si based on efficient electron energy distribution calculation 1-gen-1991 C., Fiegna; E., Sangiorgi; F., Venturi; Abramo, Antonio; B., Riccò
An isotropic best-fitting band model for electrons and hole transport in Silicon 1-gen-1991 F., Venturi; Abramo, Antonio; E., Sangiorgi; J., Higman; C., Fiegna; B., Riccò
Modeling of high energy electrons in n-MOSFETs 1-gen-1991 C., Fiegna; E., Sangiorgi; F., Venturi; Abramo, Antonio; B., Riccò
A numerical method to compute isotropic band models from anisotropic semiconductor band structures 1-gen-1992 Abramo, Antonio; F., Venturi; E., Sangiorgi; J. M., Higman; C., Fiegna; B., Riccò
Non-local effects on the electron energy distribution in short devices under high-field conditions 1-gen-1992 F., Venturi; E., Sangiorgi; C., Fiegna; Abramo, Antonio; F., Capasso
Unified Monte Carlo approach to the Boltzmann and Wigner equations” 1-gen-1992 P., Vitanov; M., Nedjalkov; C., Jacoboni; F., Rossi; Abramo, Antonio
A multi-band model for hole transport in silicon at high energies 1-gen-1992 Abramo, Antonio; F., Venturi; E., Sangiorgi; C., Fiegna; B., Riccò; R., Brunetti; W., Quade; C., Jacoboni
Device simulation of small silicon MOSFET's using the Monte Carlo method 1-gen-1992 Abramo, Antonio; F., Venturi; E., Sangiorgi; C., Fiegna; B., Riccò
Modeling of high energy transport in silicon by means of the Monte Carlo method 1-gen-1993 E., Sangiorgi; C., Fiegna; Abramo, Antonio
An efficient impact ionization model for silicon Monte Carlo simulation 1-gen-1993 C. S., Yao; D., Chen; R. W., Dutton; F., Venturi; E., Sangiorgi; Abramo, Antonio
n.a. 1-gen-1993 Abramo, Antonio; R., Brunetti; C., Fiegna; C., Jacoboni; B., Riccò; E., Sangiorgi; F., Venturi
Monte Carlo simulation of carrier-carrier interaction in silicon devices 1-gen-1993 Abramo, Antonio; R., Brunetti; C., Jacoboni; F., Venturi
A numerical method to compute isotropic band models from anisotropic semiconductor band structures 1-gen-1993 Abramo, Antonio; F., Venturi; E., Sangiorgi; J. M., Higman; B., Riccò
Mobility simulation in Si/SiGe heterostructure FETs 1-gen-1994 Abramo, Antonio; J., Bude; F., Venturi; M. R., Pinto
A comparison of numerical solutions of the Boltzmann Transport Equation for high energy electron transport silicon 1-gen-1994 Abramo, Antonio; L., Baudry; R., Brunetti; R., Castagné; M., Charef; F., Dessenne; P., Dolfus; R., Dutton; W. L., Engl; R., Fauquembergue; C., Fiegna; M. V., Fischetti; S., Galdin; N., Goldsman; M., Hackel; C., Hamaguchi; K., Hess; K., Hennacy; P., Hesto; J. M., Higman; T., Iizuka; C., Jungemann; Y., Kamakura; H., Kosina; T., Kunikiyo; S., Laux; H., Lin; C., Maziar; H., Mizuno; H. J., Peifer; S., Ramaswamy; N., Sano; P. G., Scrobohaci; S., Selberherr; M., Takenaka; T. W., Tang; K., Taniguchi; J. L., Thobel; R., Thoma; K., Tomizawa; M., Tomizawa; T., Vogelsang; S. L., Wang; X., Wang; C. S., Yao; P. D., Yoder; A., Yoshii
A combined transport-injection model for hot-electron and hot-hole injection in the gate oxide of MOS structures 1-gen-1994 A., Ghetti; Selmi, Luca; Sangiorgi, Enrico; Abramo, Antonio; F., Venturi
A multi-Band Monte Carlo approach to Coulomb interaction for device analysis 1-gen-1994 Abramo, Antonio; R., Brunetti; C., Jacoboni; F., Venturi; E., Sangiorgi
Mobility simulation in Si/SiGe heterostructure FETs 1-gen-1994 Abramo, Antonio; J., Bude; F., Venturi; M. R., Pinto
Performance optimization in Si/SiGe heterostructure FETs 1-gen-1995 Abramo, Antonio; J., Bude; F., Venturi; M. R., Pinto; E., Sangiorgi
Hot carrier effects in short MOSFETs at low applied voltages 1-gen-1995 Abramo, Antonio; C., Fiegna; F., Venturi
Transmission properties of resonant cavities and rough quantum wells 1-gen-1996 Abramo, Antonio; P., Casarini; C., Jacoboni
Mobility simulation of a novel Si/SiGe FET structure 1-gen-1996 Abramo, Antonio; J., Bude; F., Venturi; M. R., Pinto
Phase time for coherent transport in two-dimensional structures 1-gen-1996 Abramo, Antonio; P., Casarini; C., Jacoboni
Optimization of channel profiles for ultra-short MOSFETs by quantum simulation 1-gen-1996 C., Fiegna; Abramo, Antonio
Electron energy distributions in silicon structures at low applied voltages and high electric fields 1-gen-1996 Abramo, Antonio; C., Fiegna
Wigner-function for open systems with electron-phonon interaction 1-gen-1997 P., Bordone; Abramo, Antonio; R., Brunetti; M., Pascoli; C., Jacoboni
A general purpose 2D Schrödinger solver with open/closed boundary conditions for quantum device analysis 1-gen-1997 Abramo, Antonio
Solution of 1-D Schrödinger and Poisson equations in single and double gate SOI MOS 1-gen-1997 C., Fiegna; Abramo, Antonio
Full-band Monte Carlo analysis of hot-carrier light emission in GaAs 1-gen-1997 I., Ferretti; Abramo, Antonio; R., Brunetti; C., Jacoboni
Monte Carlo simulation of hot electrons in semiconductor devices 1-gen-1998 C., Jacoboni; Abramo, Antonio; R., Brunetti
Quantum effects in the simulation of conventional devices 1-gen-1998 Abramo, Antonio; C., Fiegna; P., Casarini
Application of the Wigner-function formulation to mesoscopic systems in presence of the electron- phonon interaction 1-gen-1998 C., Jacoboni; Abramo, Antonio; P., Bordone; R., Brunetti; M., Pascoli
Analysis of quantum effects in non-uniformly doped MOS structure 1-gen-1998 C., Fiegna; Abramo, Antonio
Two-dimensional quantum simulation of silicon MOSFETs 1-gen-1999 Abramo, Antonio; A., Cardin; Selmi, Luca; E., Sangiorgi
Single- and double-gate SOI MOS structures for future ULSI: a simulation study 1-gen-1999 C., Fiegna; Abramo, Antonio; E., Sangiorgi
Simulation study of the impact of channel doping profiles on MOSFET analog performance 1-gen-1999 C., Fiegna; Abramo, Antonio; E., Sangiorgi
Quantum transport of electrons in open nanostructures with the Wigner-function formalism 1-gen-1999 P., Bordone; M., Pascoli; R., Brunetti; A., Bertoni; C., Jacoboni; Abramo, Antonio
Density of states of a two-dimensional electron gas measured by high resolution photoelectron spectroscopy 1-gen-1999 M. G., Betti; V., Corradini; V., De Renzi; C., Mariani; P., Casarini; Abramo, Antonio
Two dimensional quantum simulation of silicon MOSFETs 1-gen-1999 Abramo, Antonio; Cardin, A.; Selmi, Luca; Sangiorgi, Enrico
On the Optimization of HALOs for 0.1 micron MOSFETs and Below 1-gen-1999 Todon, A; Selmi, Luca; Abramo, Antonio; Sangiorgi, Enrico
Short channel and hot carrier performance of ULSI MOSFETs with halo structures 1-gen-2000 A., Todon; Selmi, Luca; Abramo, Antonio; Sangiorgi, Enrico
Two-dimensional quantum mechanical aspects in the charge distribution of ULSI silicon MOSFETs 1-gen-2000 Abramo, Antonio; A., Cardin; Selmi, Luca; Sangiorgi, Enrico
Tunnelling Injection in Thin Oxide MOS Capacitors 1-gen-2000 . DALLA SERRA, A.; Abramo, Antonio; Palestri, Pierpaolo; Selmi, Luca; Sangiorgi, E.
A comparison between semi-classical and quantum-mechanical escape-times for gate current calculations 1-gen-2000 DALLA SERRA, Alberto; Abramo, Antonio; Palestri, Pierpaolo; Selmi, Luca
Well-tempered MOSFETs: 1D versus 2D quantum analysis 1-gen-2000 Abramo, Antonio; Selmi, Luca; Yu, Z; Dutton, R.
Two-dimensional quantum mechanical simulation of charge distribution in silicon MOSFETs 1-gen-2000 Abramo, Antonio; Cardin, A.; Selmi, Luca; Sangiorgi, Enrico
Impact Ionization and Photon Emission in MOS Capacitors and FETs 1-gen-2000 Palestri, Pierpaolo; M., Pavesi; P., Rigolli; Selmi, Luca; DALLA SERRA, Alberto; Abramo, Antonio; F., Widdershoven; Sangiorgi, Enrico
Simulation of tunneling gate currents in ultra-thin SOI MOSFETs 1-gen-2001 C., Fiegna; Abramo, Antonio
Mostrati risultati da 1 a 50 di 85
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