BADAMI, Oves Mohamed Hussein
 Distribuzione geografica
Continente #
NA - Nord America 858
EU - Europa 192
AS - Asia 54
Continente sconosciuto - Info sul continente non disponibili 1
Totale 1.105
Nazione #
US - Stati Uniti d'America 857
IT - Italia 50
DE - Germania 40
SE - Svezia 38
UA - Ucraina 32
CN - Cina 27
TR - Turchia 15
IE - Irlanda 9
BE - Belgio 8
SG - Singapore 8
GB - Regno Unito 6
FI - Finlandia 4
AT - Austria 2
IN - India 2
KR - Corea 2
CA - Canada 1
DK - Danimarca 1
EU - Europa 1
FR - Francia 1
RU - Federazione Russa 1
Totale 1.105
Città #
Fairfield 152
Woodbridge 99
Chandler 76
Ashburn 69
Houston 61
Seattle 56
Cambridge 54
Wilmington 49
Ann Arbor 48
Udine 29
Dearborn 24
Jacksonville 20
Izmir 15
Dublin 9
Princeton 9
Singapore 8
Beijing 7
Boardman 7
Brussels 7
Nanjing 5
Scafati 5
Cervignano Del Friuli 4
Modena 4
San Diego 4
Des Moines 3
Guangzhou 3
Ogden 3
Redwood City 2
Trieste 2
Castelfranco Veneto 1
Chengdu 1
Copenhagen 1
Fuzhou 1
Gent 1
Grafing 1
Graz 1
Helsinki 1
Karlsruhe 1
Kunming 1
Los Angeles 1
Mcallen 1
Montreal 1
Nanchang 1
Nanning 1
Neubiberg 1
Norwalk 1
Pune 1
Quzhou 1
Rome 1
Secaucus 1
Shaoxing 1
Simi Valley 1
Taizhou 1
Tianjin 1
Wuhan 1
Totale 860
Nome #
Improved surface roughness modeling and mobility projections in thin film MOSFETs 172
New device concepts, transistor architectures and materials for high performance and energy efficient CMOS circuits in the forthcoming era of 3D integrated circuits 156
NEGF based transport modelling with a full-band, pseudopotential Hamiltonian: Theory, implementation and full device simulations 134
Surface roughness limited mobility in multi-gate FETs with arbitrary cross-section 131
An Improved Surface Roughness Scattering Model for Bulk, Thin-Body, and Quantum-Well MOSFETs 127
Performance comparison for FinFETs, nanowire and stacked nanowires FETs: Focus on the influence of surface roughness and thermal effects 120
Transport models based on NEGF and empirical pseudopotentials: A computationally viable method for self-consistent simulation of nanoscale devices 112
Benchmarking of 3-D MOSFET Architectures: Focus on the Impact of Surface Roughness and Self-Heating 108
Semi-classical modeling of nanoscale nMOSFETs with III-V channel 98
Totale 1.158
Categoria #
all - tutte 2.992
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 2.992


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/2020332 0 9 23 64 30 51 50 37 33 20 3 12
2020/2021185 1 26 4 27 6 33 9 17 22 8 16 16
2021/2022111 5 7 16 6 0 5 7 3 3 13 35 11
2022/2023154 9 18 2 27 16 34 0 12 25 1 5 5
2023/202427 4 3 0 1 5 2 0 0 4 1 0 7
2024/20254 4 0 0 0 0 0 0 0 0 0 0 0
Totale 1.158