BADAMI, Oves Mohamed Hussein
 Distribuzione geografica
Continente #
NA - Nord America 869
EU - Europa 192
AS - Asia 76
Continente sconosciuto - Info sul continente non disponibili 1
Totale 1.138
Nazione #
US - Stati Uniti d'America 868
IT - Italia 50
DE - Germania 40
SE - Svezia 38
UA - Ucraina 32
CN - Cina 31
SG - Singapore 26
TR - Turchia 15
IE - Irlanda 9
BE - Belgio 8
GB - Regno Unito 6
FI - Finlandia 4
AT - Austria 2
IN - India 2
KR - Corea 2
CA - Canada 1
DK - Danimarca 1
EU - Europa 1
FR - Francia 1
RU - Federazione Russa 1
Totale 1.138
Città #
Fairfield 152
Woodbridge 99
Chandler 76
Ashburn 69
Houston 61
Seattle 56
Cambridge 54
Wilmington 49
Ann Arbor 48
Udine 29
Dearborn 24
Singapore 23
Jacksonville 20
Boardman 16
Izmir 15
Dublin 9
Princeton 9
Beijing 7
Brussels 7
Nanjing 6
Scafati 5
Cervignano Del Friuli 4
Modena 4
San Diego 4
Des Moines 3
Guangzhou 3
Ogden 3
Redwood City 2
Trieste 2
Castelfranco Veneto 1
Chengdu 1
Copenhagen 1
Fuzhou 1
Gent 1
Grafing 1
Graz 1
Helsinki 1
Karlsruhe 1
Kunming 1
Los Angeles 1
Mcallen 1
Montreal 1
Nanchang 1
Nanning 1
Neubiberg 1
Norwalk 1
Pune 1
Quzhou 1
Rome 1
Santa Clara 1
Secaucus 1
Shaoxing 1
Simi Valley 1
Taizhou 1
Tianjin 1
Wuhan 1
Wuxi 1
Totale 887
Nome #
Improved surface roughness modeling and mobility projections in thin film MOSFETs 178
New device concepts, transistor architectures and materials for high performance and energy efficient CMOS circuits in the forthcoming era of 3D integrated circuits 160
NEGF based transport modelling with a full-band, pseudopotential Hamiltonian: Theory, implementation and full device simulations 137
Surface roughness limited mobility in multi-gate FETs with arbitrary cross-section 135
An Improved Surface Roughness Scattering Model for Bulk, Thin-Body, and Quantum-Well MOSFETs 131
Performance comparison for FinFETs, nanowire and stacked nanowires FETs: Focus on the influence of surface roughness and thermal effects 124
Transport models based on NEGF and empirical pseudopotentials: A computationally viable method for self-consistent simulation of nanoscale devices 114
Benchmarking of 3-D MOSFET Architectures: Focus on the Impact of Surface Roughness and Self-Heating 110
Semi-classical modeling of nanoscale nMOSFETs with III-V channel 102
Totale 1.191
Categoria #
all - tutte 3.305
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 3.305


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/2020236 0 0 0 0 30 51 50 37 33 20 3 12
2020/2021185 1 26 4 27 6 33 9 17 22 8 16 16
2021/2022111 5 7 16 6 0 5 7 3 3 13 35 11
2022/2023154 9 18 2 27 16 34 0 12 25 1 5 5
2023/202427 4 3 0 1 5 2 0 0 4 1 0 7
2024/202537 4 9 15 7 2 0 0 0 0 0 0 0
Totale 1.191