statistiche ricercatore

Nome	#
Drain Current Improvements in Uniaxially Strained p-MOSFETs: a Multi-Subband Monte Carlo Study	144
On the origin of the mobility reduction in n- and p-metal-oxide-semiconductor field effect transistors with hafnium-based/metal gate stacks	129
Extraction of h parameter characterising ueff against Eeff curves in strained Si nMOS devices	122
Drain current improvements in uniaxially strained p-MOSFETs: A Multi-Subband Monte Carlo study	112
On the Surface-Roughness Scattering in Biaxially Strained n- and p-MOS Transistors	107
Trade-off between Electron Velocity and Density of States in Ballistic nano-MOSFETs	98
Comparison of Semiclassical Transport Formulations Including Quantum Corrections for Advanced Devices with High-K Gate Stacks	98
Semiclassical Modeling of Quasi-Ballistic Hole Transport in Nanoscale pMOSFETs Based on a Multi-Subband Monte Carlo Approach	88
Analytical models for the insight into the use of alternative channel materials in ballistic nano-MOSFETs	85
Understanding the mobility reduction in MOSFETs featuring high-κ dielectrics	58
An efficient, mixed semiclassical/quantum mechanical model to simulate planar and wire nano-transistors	48
Totale	1.089

	Totale	Lug	Ago	Sett	Ott	Nov	Dic	Gen	Feb	Mar	Apr	Mag	Giu
2019/2020	200	0	0	0	0	0	48	36	35	26	24	5	26
2020/2021	164	4	23	11	25	15	17	12	13	17	6	16	5
2021/2022	101	6	8	0	2	0	9	7	5	0	18	35	11
2022/2023	131	12	20	1	18	10	27	0	10	23	0	3	7
2023/2024	33	8	1	0	1	6	0	0	0	5	0	0	12
2024/2025	56	6	14	23	0	9	4	0	0	0	0	0	0
Totale													1.089