DE MICHIELIS, Marco
 Distribuzione geografica
Continente #
NA - Nord America 882
EU - Europa 201
AS - Asia 167
SA - Sud America 14
AF - Africa 2
Totale 1.266
Nazione #
US - Stati Uniti d'America 874
SG - Singapore 93
UA - Ucraina 64
DE - Germania 38
CN - Cina 35
IT - Italia 28
HK - Hong Kong 24
FI - Finlandia 23
RU - Federazione Russa 21
BR - Brasile 13
IE - Irlanda 11
CA - Canada 7
GB - Regno Unito 4
KR - Corea 4
BE - Belgio 3
FR - Francia 3
TR - Turchia 3
PL - Polonia 2
SE - Svezia 2
AE - Emirati Arabi Uniti 1
AM - Armenia 1
AZ - Azerbaigian 1
BD - Bangladesh 1
ES - Italia 1
ET - Etiopia 1
IN - India 1
JM - Giamaica 1
JP - Giappone 1
KG - Kirghizistan 1
KZ - Kazakistan 1
PT - Portogallo 1
VE - Venezuela 1
ZA - Sudafrica 1
Totale 1.266
Città #
Woodbridge 112
Fairfield 111
Chandler 67
Ann Arbor 61
Houston 58
Ashburn 54
Singapore 46
Jacksonville 45
Seattle 41
Cambridge 38
Wilmington 38
Dearborn 32
Hong Kong 24
Udine 20
Beijing 18
Boardman 12
Dublin 11
Princeton 11
Ottawa 7
San Diego 6
Santa Clara 6
Düsseldorf 5
Norwalk 5
Brussels 3
Hefei 3
Indiana 3
Ogden 3
Rome 3
Seoul 3
Dallas 2
Frankfurt am Main 2
Grafing 2
Izmir 2
Jinan 2
Milan 2
Nanjing 2
Quzhou 2
Simi Valley 2
Stockholm 2
Zhengzhou 2
Addis Ababa 1
Almaty 1
Araçatuba 1
Arezzo 1
Ashiharacho 1
Baku 1
Bishkek 1
Buffalo 1
Camden 1
Campinas 1
Charlotte 1
Chennai 1
Chicago 1
Coronel Vivida 1
Des Moines 1
Dubai 1
Guangzhou 1
Hebei 1
Helsinki 1
Horizonte 1
Ipatinga 1
Istanbul 1
Kingston 1
Lanzhou 1
Lauterbourg 1
Lisbon 1
London 1
Munich 1
Newark 1
Nova Hartz 1
Oderzo 1
Passos 1
Porto Alegre 1
Portsmouth 1
Praia Grande 1
San Francisco 1
Santa Rosa 1
Santaluz 1
São Paulo 1
Taizhou 1
Torre Del Greco 1
Vera Cruz 1
Warsaw 1
Yerevan 1
Ürümqi 1
Totale 913
Nome #
Drain Current Improvements in Uniaxially Strained p-MOSFETs: a Multi-Subband Monte Carlo Study 158
On the origin of the mobility reduction in n- and p-metal-oxide-semiconductor field effect transistors with hafnium-based/metal gate stacks 144
Extraction of h parameter characterising ueff against Eeff curves in strained Si nMOS devices 137
Drain current improvements in uniaxially strained p-MOSFETs: A Multi-Subband Monte Carlo study 133
On the Surface-Roughness Scattering in Biaxially Strained n- and p-MOS Transistors 127
Comparison of Semiclassical Transport Formulations Including Quantum Corrections for Advanced Devices with High-K Gate Stacks 121
Trade-off between Electron Velocity and Density of States in Ballistic nano-MOSFETs 112
Semiclassical Modeling of Quasi-Ballistic Hole Transport in Nanoscale pMOSFETs Based on a Multi-Subband Monte Carlo Approach 107
Analytical models for the insight into the use of alternative channel materials in ballistic nano-MOSFETs 98
Understanding the mobility reduction in MOSFETs featuring high-κ dielectrics 72
An efficient, mixed semiclassical/quantum mechanical model to simulate planar and wire nano-transistors 60
Totale 1.269
Categoria #
all - tutte 4.289
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 4.289


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/2021164 4 23 11 25 15 17 12 13 17 6 16 5
2021/2022101 6 8 0 2 0 9 7 5 0 18 35 11
2022/2023131 12 20 1 18 10 27 0 10 23 0 3 7
2023/202433 8 1 0 1 6 0 0 0 5 0 0 12
2024/2025228 6 14 23 0 9 4 18 16 26 21 34 57
2025/20268 8 0 0 0 0 0 0 0 0 0 0 0
Totale 1.269