ARREGHINI, Antonio
 Distribuzione geografica
Continente #
NA - Nord America 334
EU - Europa 76
AS - Asia 28
Totale 438
Nazione #
US - Stati Uniti d'America 334
DE - Germania 30
UA - Ucraina 23
CN - Cina 14
SG - Singapore 11
FI - Finlandia 8
IT - Italia 7
IE - Irlanda 4
RU - Federazione Russa 4
TR - Turchia 2
AZ - Azerbaigian 1
Totale 438
Città #
Woodbridge 53
Ann Arbor 34
Fairfield 33
Cambridge 24
Wilmington 23
Seattle 22
Ashburn 20
Houston 19
Chandler 18
Jacksonville 17
Dearborn 15
Singapore 9
Beijing 5
Boardman 5
Dublin 4
Princeton 4
Dallas 3
Udine 3
Hefei 2
Izmir 2
Nanchang 2
New York 2
San Diego 2
Baku 1
Chengdu 1
Jinan 1
Kunming 1
Los Angeles 1
Munich 1
Nanjing 1
Totale 328
Nome #
Experimental characterization of the vertical position of the trapped charge in Si nitride-based nonvolatile memory cells 130
Experimental and Simulation Analysis of Program/Retention Transients in Silicon Nitride-Based NVM Cells 120
Analysis of nitride storage non-volatile memories with HfSiO(x) blocking dielectric and TiN metal gate for low power embedded applications 103
New Charge Pumping model for the analysis of the spatial trap distribution in the nitride layer of SONOS devices 85
Totale 438
Categoria #
all - tutte 1.311
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 1.311


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/202097 0 0 0 0 11 24 16 15 12 11 1 7
2020/202154 4 8 0 8 0 5 7 5 8 1 7 1
2021/202233 3 1 0 0 0 4 0 1 0 8 12 4
2022/202337 4 7 1 4 2 7 0 4 3 0 1 4
2023/202412 3 1 0 0 1 2 0 0 0 0 0 5
2024/202525 0 8 9 2 6 0 0 0 0 0 0 0
Totale 438