ARREGHINI, Antonio
 Distribuzione geografica
Continente #
NA - Nord America 318
EU - Europa 75
AS - Asia 20
Totale 413
Nazione #
US - Stati Uniti d'America 318
DE - Germania 29
UA - Ucraina 23
CN - Cina 14
FI - Finlandia 8
IT - Italia 7
IE - Irlanda 4
RU - Federazione Russa 4
SG - Singapore 4
TR - Turchia 2
Totale 413
Città #
Woodbridge 53
Ann Arbor 34
Fairfield 33
Cambridge 24
Wilmington 23
Seattle 22
Ashburn 20
Houston 19
Chandler 18
Jacksonville 17
Dearborn 15
Beijing 5
Dublin 4
Princeton 4
Singapore 4
Udine 3
Hefei 2
Izmir 2
Nanchang 2
New York 2
San Diego 2
Boardman 1
Chengdu 1
Jinan 1
Kunming 1
Nanjing 1
Totale 313
Nome #
Experimental characterization of the vertical position of the trapped charge in Si nitride-based nonvolatile memory cells 125
Experimental and Simulation Analysis of Program/Retention Transients in Silicon Nitride-Based NVM Cells 116
Analysis of nitride storage non-volatile memories with HfSiO(x) blocking dielectric and TiN metal gate for low power embedded applications 94
New Charge Pumping model for the analysis of the spatial trap distribution in the nitride layer of SONOS devices 78
Totale 413
Categoria #
all - tutte 1.125
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 1.125


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/2020137 8 4 6 22 11 24 16 15 12 11 1 7
2020/202154 4 8 0 8 0 5 7 5 8 1 7 1
2021/202233 3 1 0 0 0 4 0 1 0 8 12 4
2022/202337 4 7 1 4 2 7 0 4 3 0 1 4
2023/202412 3 1 0 0 1 2 0 0 0 0 0 5
Totale 413