ARREGHINI, Antonio
 Distribuzione geografica
Continente #
NA - Nord America 397
AS - Asia 123
EU - Europa 98
SA - Sud America 14
Totale 632
Nazione #
US - Stati Uniti d'America 395
SG - Singapore 52
DE - Germania 36
CN - Cina 33
UA - Ucraina 23
BR - Brasile 13
VN - Vietnam 11
HK - Hong Kong 10
IT - Italia 9
RU - Federazione Russa 9
FI - Finlandia 8
FR - Francia 4
IE - Irlanda 4
TR - Turchia 3
AZ - Azerbaigian 2
ES - Italia 2
ID - Indonesia 2
IN - India 2
PK - Pakistan 2
BD - Bangladesh 1
CO - Colombia 1
GB - Regno Unito 1
GT - Guatemala 1
IQ - Iraq 1
JO - Giordania 1
JP - Giappone 1
LV - Lettonia 1
MX - Messico 1
PH - Filippine 1
PL - Polonia 1
SA - Arabia Saudita 1
Totale 632
Città #
Woodbridge 53
Ann Arbor 34
Fairfield 33
Ashburn 32
Cambridge 24
Wilmington 23
Seattle 22
Houston 20
Singapore 20
Chandler 18
Jacksonville 17
Dearborn 15
Beijing 14
Hong Kong 10
San Jose 10
Los Angeles 7
The Dalles 6
Boardman 5
Dallas 5
Dublin 4
Lauterbourg 4
New York 4
Princeton 4
Düsseldorf 3
Hanoi 3
Ho Chi Minh City 3
Udine 3
Baku 2
Buffalo 2
Denver 2
Frankfurt am Main 2
Hefei 2
Izmir 2
Nanchang 2
San Diego 2
São Bernardo do Campo 2
Amman 1
Ankara 1
Araruama 1
Araçatuba 1
Baghdad 1
Banyuwangi 1
Batangas 1
Belo Horizonte 1
Biên Hòa 1
Boston 1
Brooklyn 1
Chengdu 1
Columbia 1
Da Nang 1
Florianópolis 1
Goiânia 1
Guatemala City 1
Gurugram 1
Haiphong 1
Ipanema 1
Jeddah 1
Jinan 1
Kansas City 1
Karachi 1
Kunming 1
Manchester 1
Montuïri 1
Mumbai 1
Munich 1
Nanjing 1
Nova Iguaçu 1
Nuremberg 1
Orem 1
Petrolina 1
Phoenix 1
Praia Grande 1
Querétaro 1
Rawalpindi 1
Riga 1
Rio de Janeiro 1
Santa Fe 1
Semarang 1
Serra Talhada 1
Tokyo 1
Warsaw 1
Totale 459
Nome #
Experimental characterization of the vertical position of the trapped charge in Si nitride-based nonvolatile memory cells 183
Experimental and Simulation Analysis of Program/Retention Transients in Silicon Nitride-Based NVM Cells 164
Analysis of nitride storage non-volatile memories with HfSiO(x) blocking dielectric and TiN metal gate for low power embedded applications 159
New Charge Pumping model for the analysis of the spatial trap distribution in the nitride layer of SONOS devices 126
Totale 632
Categoria #
all - tutte 2.047
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 2.047


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/20219 0 0 0 0 0 0 0 0 0 1 7 1
2021/202233 3 1 0 0 0 4 0 1 0 8 12 4
2022/202337 4 7 1 4 2 7 0 4 3 0 1 4
2023/202412 3 1 0 0 1 2 0 0 0 0 0 5
2024/202577 0 8 9 2 6 2 4 3 11 7 12 13
2025/2026142 12 16 6 20 26 11 26 4 10 11 0 0
Totale 632