ARREGHINI, Antonio
 Distribuzione geografica
Continente #
NA - Nord America 407
AS - Asia 124
EU - Europa 98
SA - Sud America 14
Totale 643
Nazione #
US - Stati Uniti d'America 403
SG - Singapore 52
DE - Germania 36
CN - Cina 33
UA - Ucraina 23
BR - Brasile 13
VN - Vietnam 11
HK - Hong Kong 10
IT - Italia 9
RU - Federazione Russa 9
FI - Finlandia 8
FR - Francia 4
IE - Irlanda 4
TR - Turchia 3
AZ - Azerbaigian 2
ES - Italia 2
ID - Indonesia 2
IN - India 2
PK - Pakistan 2
BD - Bangladesh 1
CA - Canada 1
CO - Colombia 1
GB - Regno Unito 1
GT - Guatemala 1
IQ - Iraq 1
JO - Giordania 1
JP - Giappone 1
KR - Corea 1
LV - Lettonia 1
MX - Messico 1
PH - Filippine 1
PL - Polonia 1
SA - Arabia Saudita 1
SV - El Salvador 1
Totale 643
Città #
Woodbridge 53
Ann Arbor 34
Fairfield 33
Ashburn 32
Cambridge 24
Wilmington 23
Seattle 22
Houston 20
Singapore 20
Chandler 18
Jacksonville 17
Dearborn 15
Beijing 14
Hong Kong 10
San Jose 10
Los Angeles 7
Dallas 6
The Dalles 6
Boardman 5
Dublin 4
Lauterbourg 4
New York 4
Princeton 4
Düsseldorf 3
Hanoi 3
Ho Chi Minh City 3
Santa Clara 3
Udine 3
Baku 2
Buffalo 2
Denver 2
Frankfurt am Main 2
Hefei 2
Izmir 2
Nanchang 2
San Diego 2
São Bernardo do Campo 2
Amman 1
Ankara 1
Araruama 1
Araçatuba 1
Baghdad 1
Banyuwangi 1
Batangas 1
Belo Horizonte 1
Biên Hòa 1
Boston 1
Brooklyn 1
Chengdu 1
Columbia 1
Da Nang 1
Florianópolis 1
Forest Hill 1
Goiânia 1
Guatemala City 1
Gurugram 1
Haiphong 1
Hempstead 1
Ipanema 1
Jeddah 1
Jinan 1
Kansas City 1
Karachi 1
Kunming 1
Manchester 1
Montreal 1
Montuïri 1
Mumbai 1
Munich 1
Nanjing 1
Nova Iguaçu 1
Nuremberg 1
Orem 1
Petrolina 1
Philadelphia 1
Phoenix 1
Pohang-si 1
Praia Grande 1
Querétaro 1
Rawalpindi 1
Riga 1
Rio de Janeiro 1
San Salvador 1
Santa Fe 1
Semarang 1
Serra Talhada 1
Tokyo 1
Warsaw 1
Totale 469
Nome #
Experimental characterization of the vertical position of the trapped charge in Si nitride-based nonvolatile memory cells 186
Experimental and Simulation Analysis of Program/Retention Transients in Silicon Nitride-Based NVM Cells 169
Analysis of nitride storage non-volatile memories with HfSiO(x) blocking dielectric and TiN metal gate for low power embedded applications 160
New Charge Pumping model for the analysis of the spatial trap distribution in the nitride layer of SONOS devices 128
Totale 643
Categoria #
all - tutte 2.219
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 2.219


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/202233 3 1 0 0 0 4 0 1 0 8 12 4
2022/202337 4 7 1 4 2 7 0 4 3 0 1 4
2023/202412 3 1 0 0 1 2 0 0 0 0 0 5
2024/202577 0 8 9 2 6 2 4 3 11 7 12 13
2025/2026152 12 16 6 20 26 11 26 4 10 15 2 4
2026/20271 1 0 0 0 0 0 0 0 0 0 0 0
Totale 643