LUCCI, Luca
 Distribuzione geografica
Continente #
NA - Nord America 923
EU - Europa 245
AS - Asia 145
SA - Sud America 21
AF - Africa 3
Continente sconosciuto - Info sul continente non disponibili 1
Totale 1.338
Nazione #
US - Stati Uniti d'America 918
UA - Ucraina 87
SG - Singapore 78
CN - Cina 51
DE - Germania 46
FI - Finlandia 32
RU - Federazione Russa 28
BR - Brasile 16
IE - Irlanda 16
IT - Italia 12
SE - Svezia 9
FR - Francia 5
GB - Regno Unito 5
TR - Turchia 5
CA - Canada 4
KR - Corea 4
IN - India 3
PL - Polonia 2
AR - Argentina 1
AT - Austria 1
CL - Cile 1
CO - Colombia 1
DO - Repubblica Dominicana 1
EC - Ecuador 1
EG - Egitto 1
EU - Europa 1
GE - Georgia 1
GR - Grecia 1
KG - Kirghizistan 1
MA - Marocco 1
NL - Olanda 1
PE - Perù 1
PH - Filippine 1
PK - Pakistan 1
ZA - Sudafrica 1
Totale 1.338
Città #
Woodbridge 159
Fairfield 96
Ann Arbor 82
Houston 82
Jacksonville 61
Chandler 46
Dearborn 40
Seattle 37
Singapore 36
Wilmington 33
Ashburn 31
Cambridge 30
Beijing 29
Dublin 16
Boardman 15
Princeton 15
Düsseldorf 5
Los Angeles 5
Izmir 4
Kunming 4
Ottawa 4
Hefei 3
Jinan 3
New York 3
Norwalk 3
Portsmouth 3
San Diego 3
São Paulo 3
Udine 3
Des Moines 2
Frankfurt am Main 2
Helsinki 2
Ogden 2
Pignone 2
Rome 2
Santa Clara 2
Seoul 2
Uijeongbu-si 2
Andover 1
Athens 1
Bethlehem 1
Betim 1
Bishkek 1
Bogotá 1
Brooklyn 1
Buffalo 1
Cairo 1
Chongqing 1
Crateús 1
Goianira 1
Grafing 1
Gravatal 1
Guangzhou 1
Ilhéus 1
Indiana 1
Islamabad 1
Itamaraju 1
La Plata 1
Lauterbourg 1
Lima 1
Lorena 1
Manila 1
Milan 1
Modena 1
Munich 1
Nanchang 1
Nanning 1
Novo Hamburgo 1
Quito 1
Quzhou 1
Rabat 1
Rio Claro 1
San Mateo 1
Shenyang 1
Simi Valley 1
São José dos Campos 1
São Leopoldo 1
São Pedro da Aldeia 1
Tbilisi 1
Union 1
Vienna 1
Warsaw 1
Águas Lindas de Goiás 1
Totale 917
Nome #
An improved empirical approach to introduce quantization effects in the transport direction in multi-subband Monte Carlo simulations 114
Monte-Carlo Simulation of Decananometric nMOSFETs: Multi-Subband vs. 3D-Electron Gas with Quantum Corrections 114
Comparative Analysis of Basic Transport Properties in the Inversion Layer of Bulk and SOI MOSFETs: a Monte-Carlo Study 112
Multi-subband Monte Carlo modeling of nano-MOSFETs with strong vertical quantization and electron gas degeneration 110
Modeling the uniform transport in thin film SOI MOSFETs with a Monte-Carlo simulator for the 2D electron gas 98
Multi-Subband-Monte-Carlo investigation of the mean free path and of the kT layer in degenerated quasi ballistic nanoMOSFETs 96
Device variability and correlation control by automated tuning of SPICE cards to PCM measurements 95
Impact of band structure on charge trapping in thin SiO2/Al2O3/Poly-Si gate stacks 91
Progress in Technology Oriented Analytical Models for Advanced MOSFET devices 90
Analysis of transport properties of nanoscale SOI devices: Full Quantum versus Semi Classical models 87
Simulation of Double-Gate nano-MOSFETs with the Multi-subband Monte Carlo Method 80
Polarity dependent charge Trapping in Thin SiO_2/Al_2O_3 Gate Stacks with Poly-Si Gate Electrodes: Influence of High Temperature Annealing 77
Quantitative Assesment of mobility degradation by Remote Coulomb Scattering in Ultra-thin oxide MOSFETs: measurement and simulations 59
Mobility, Velocity and Average Energy in Ultra-Thin-Body SOI MOSFETs 59
An efficient, mixed semiclassical/quantum mechanical model to simulate planar and wire nano-transistors 57
Totale 1.339
Categoria #
all - tutte 4.996
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 4.996


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/202022 0 0 0 0 0 0 0 0 0 0 0 22
2020/2021150 5 19 1 22 4 20 7 16 30 2 22 2
2021/202291 6 9 3 3 2 8 3 7 1 21 13 15
2022/2023114 15 25 3 5 2 25 0 6 18 2 2 11
2023/202438 7 14 1 1 6 2 0 1 5 0 0 1
2024/2025221 11 15 23 2 12 6 23 36 33 23 34 3
Totale 1.339