IRIS
LUCCI, Luca
 Distribuzione geografica
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Continente #
NA - Nord America 868
EU - Europa 195
AS - Asia 51
Continente sconosciuto - Info sul continente non disponibili 1
SA - Sud America 1
Totale 1.116
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Nazione #
US - Stati Uniti d'America 864
UA - Ucraina 87
CN - Cina 44
DE - Germania 38
FI - Finlandia 31
IE - Irlanda 15
IT - Italia 11
SE - Svezia 9
CA - Canada 4
TR - Turchia 4
IN - India 3
GB - Regno Unito 2
RU - Federazione Russa 2
CL - Cile 1
EU - Europa 1
Totale 1.116
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Città #
Woodbridge 159
Fairfield 96
Ann Arbor 82
Houston 82
Jacksonville 61
Chandler 46
Dearborn 40
Seattle 36
Wilmington 33
Ashburn 31
Cambridge 30
Beijing 23
Dublin 15
Princeton 15
Izmir 4
Kunming 4
Ottawa 4
Hefei 3
Jinan 3
New York 3
Norwalk 3
San Diego 3
Udine 3
Des Moines 2
Ogden 2
Pignone 2
Rome 2
Andover 1
Buffalo 1
Chongqing 1
Grafing 1
Guangzhou 1
Helsinki 1
Indiana 1
Modena 1
Nanchang 1
Nanning 1
Quzhou 1
San Mateo 1
Shenyang 1
Simi Valley 1
Totale 801
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Nome #
An improved empirical approach to introduce quantization effects in the transport direction in multi-subband Monte Carlo simulations 100
Comparative Analysis of Basic Transport Properties in the Inversion Layer of Bulk and SOI MOSFETs: a Monte-Carlo Study 98
Monte-Carlo Simulation of Decananometric nMOSFETs: Multi-Subband vs. 3D-Electron Gas with Quantum Corrections 98
Multi-subband Monte Carlo modeling of nano-MOSFETs with strong vertical quantization and electron gas degeneration 95
Modeling the uniform transport in thin film SOI MOSFETs with a Monte-Carlo simulator for the 2D electron gas 85
Multi-Subband-Monte-Carlo investigation of the mean free path and of the kT layer in degenerated quasi ballistic nanoMOSFETs 82
Impact of band structure on charge trapping in thin SiO2/Al2O3/Poly-Si gate stacks 81
Progress in Technology Oriented Analytical Models for Advanced MOSFET devices 78
Device variability and correlation control by automated tuning of SPICE cards to PCM measurements 75
Analysis of transport properties of nanoscale SOI devices: Full Quantum versus Semi Classical models 74
Simulation of Double-Gate nano-MOSFETs with the Multi-subband Monte Carlo Method 64
Polarity dependent charge Trapping in Thin SiO_2/Al_2O_3 Gate Stacks with Poly-Si Gate Electrodes: Influence of High Temperature Annealing 58
Mobility, Velocity and Average Energy in Ultra-Thin-Body SOI MOSFETs 44
An efficient, mixed semiclassical/quantum mechanical model to simulate planar and wire nano-transistors 43
Quantitative Assesment of mobility degradation by Remote Coulomb Scattering in Ultra-thin oxide MOSFETs: measurement and simulations 42
Totale 1.117
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Categoria #
all - tutte 3.274
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 3.274
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2018/201930 0 0 0 0 0 0 0 0 0 0 0 30
2019/2020336 24 31 13 40 23 52 42 39 25 21 4 22
2020/2021150 5 19 1 22 4 20 7 16 30 2 22 2
2021/202291 6 9 3 3 2 8 3 7 1 21 13 15
2022/2023114 15 25 3 5 2 25 0 6 18 2 2 11
2023/202437 7 14 1 1 6 2 0 1 5 0 0 0
Totale 1.117