SEGATTO, MATTIA
 Distribuzione geografica
Continente #
NA - Nord America 181
EU - Europa 124
AS - Asia 31
AF - Africa 4
Totale 340
Nazione #
US - Stati Uniti d'America 177
IT - Italia 54
FR - Francia 26
IE - Irlanda 18
SG - Singapore 16
CN - Cina 10
FI - Finlandia 8
DE - Germania 6
AT - Austria 5
IN - India 4
TG - Togo 4
CA - Canada 3
BE - Belgio 2
MD - Moldavia 1
MX - Messico 1
NL - Olanda 1
PT - Portogallo 1
SE - Svezia 1
TR - Turchia 1
UA - Ucraina 1
Totale 340
Città #
Chandler 58
Palaiseau 22
Singapore 15
Bologna 13
Udine 13
Fairfield 11
Wilmington 11
Dublin 10
Ashburn 8
Houston 8
Codroipo 6
Boardman 5
Dearborn 5
Seattle 5
Woodbridge 5
Cambridge 4
Helsinki 4
Lomé 4
Princeton 4
Ann Arbor 3
Ogden 3
Andover 2
Brussels 2
Frattamaggiore 2
Klagenfurt 2
Kozhikode 2
Lappeenranta 2
Nanjing 2
Shenzhen 2
Toronto 2
Trieste 2
Vienna 2
Beijing 1
Charlotte 1
Chisinau 1
Cormeilles-en-Parisis 1
Frankfurt am Main 1
Fuzhou 1
Guangzhou 1
Hyderabad 1
Istanbul 1
Jacksonville 1
Jiaxing 1
Kunming 1
Lisbon 1
Livorno 1
Milan 1
Montreal 1
Norwalk 1
Nuremberg 1
Paris 1
Rome 1
Shillong 1
Villach 1
Totale 261
Nome #
Modeling 1/f and Lorenzian noise in III-V MOSFETs 91
Modelling and design of FTJs as multi-level low energy memristors for neuromorphic computing 55
Polarization switching and interface charges in BEOL compatible Ferroelectric Tunnel Junctions 49
Intrinsic Nature of Negative Capacitance in Multidomain Hf0.5Zr0.5O2-Based Ferroelectric/Dielectric Heterostructures 40
Charge-Trapping-Induced Compensation of the Ferroelectric Polarization in FTJs: Optimal Conditions for a Synaptic Device Operation 30
Polarization switching and AC small-signal capacitance in Ferroelectric Tunnel Junctions 30
Analytical Procedure for the Extraction of Material Parameters in Antiferroelectric ZrO2 25
Bridging Large-Signal and Small-Signal Responses of Hafnium-Based Ferroelectric Tunnel Junctions 24
Interplay between charge trapping and polarization switching in BEOL-compatible bilayer Ferroelectric Tunnel Junctions 23
Limitations to Electrical Probing of Spontaneous Polarization in Ferroelectric-Dielectric Heterostructures 18
Reducing the tunneling barrier thickness of bilayer ferroelectric tunnel junctions with metallic electrodes 11
Modelling and Simulations of Ferroelectric Materials and Ferroelectric-Based Nanoelectronic Devices : (Invited Paper) 11
Dynamics of polarization loss and imprint in bilayer ferroelectric tunnel junctions 8
Modeling and Simulation of Ferroelectric-based Devices for Neuromorphic Computing Applications 2
Totale 417
Categoria #
all - tutte 2.773
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 2.773


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/202044 0 0 0 6 6 11 8 5 4 2 2 0
2020/202116 2 0 3 2 2 0 0 3 0 2 0 2
2021/202266 0 3 0 23 8 1 5 2 1 5 9 9
2022/2023129 5 13 4 20 9 26 0 17 11 6 13 5
2023/2024155 7 10 37 3 5 1 28 24 5 13 1 21
2024/20257 7 0 0 0 0 0 0 0 0 0 0 0
Totale 417