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Characterization and Modeling of long term retention in SONOS Non Volatile Memories
2007-01-01 Arreghini, A; Akil, N; Driussi, Francesco; Esseni, David; Selmi, Luca; VAN DUUREN, M. J.
Comparative Analysis of Basic Transport Properties in the Inversion Layer of Bulk and SOI MOSFETs: a Monte-Carlo Study
2004-01-01 Lucci, Luca; Esseni, David; Palestri, Pierpaolo; Selmi, Luca
Comparative evaluation of Tunnel-FET ultra-low voltage SRAM bitcell and impact of variations
2014-01-01 Alioto, M.; Esseni, David
Comparison between Pseudospectral and Discrete Geometric Methods for Modelling Quantization Effects in Nanoscale Electron Devices
2011-01-01 Trevisan, Francesco; Specogna, Ruben; Breda, Dimitri; Esseni, David; Paussa, Alan; Vermiglio, Rossana
Comparison of Advanced Transport Models for Nanoscale nMOSFETS
2009-01-01 Palestri, Pierpaolo; Alexander, C; Asenov, A; Baccarani, G; Bournel, A; Braccioli, M; Cheng, B; Dollfus, P; Esposito, A; Esseni, David; Ghetti, A; Fiegna, C; Fiori, G; AUBRY FORTUNA, V; Iannaccone, G; Martinez, A; Majkusiak, B; Monfray, B; Reggiani, S; Riddet, C; SAINT MARTIN, J; Sangiorgi, E; Schenk, A; Selmi, Luca; Silvestri, L; Walczak, J.
Comparison of BULK and Ultra-Thin Double Gate SOI MOSFETs for the 65 nm Technology Node: A Monte Carlo Study
2005-01-01 M., Braccioli; S., Eminente; Palestri, Pierpaolo; Esseni, David; C., Fiegna
Comparison of Semiclassical Transport Formulations Including Quantum Corrections for Advanced Devices with High-K Gate Stacks
2010-01-01 Bufler, F. M.; AUBRY FORTUNA, V; Bournel, A; Braccioli, M; Dollfus, P; Esseni, David; Fiegna, C; Gamizk, F; DE MICHIELIS, Marco; Palestri, Pierpaolo; SAINT MARTIN, J; Sampedrok, C; Sangiorgi, E; Selmi, Luca; Toniutti, Paolo
Continuous Semiempirical Model for the CurrentVoltage Characteristics of Tunnel FETs
2014-01-01 Hao, Lu; J. W., Kim; Esseni, David; A., Seabaugh
Design and evaluation of mixed 3T-4T FinFET stacks for leakage reduction
2009-01-01 Agostinelli, M; Alioto, M; Esseni, David; Selmi, Luca
Design of UWB LNA in 45nm CMOS Technology: Planar Bulk vs. FinFET
2008-01-01 D., Ponton; Palestri, Pierpaolo; Esseni, David; Selmi, Luca; M., Tiebout; B., Parvais; G., Knoblinger
| Titolo | Data di pubblicazione | Autore(i) | File |
|---|---|---|---|
| Characterization and Modeling of long term retention in SONOS Non Volatile Memories | 1-gen-2007 | Arreghini, A; Akil, N; Driussi, Francesco; Esseni, David; Selmi, Luca; VAN DUUREN, M. J. | |
| Comparative Analysis of Basic Transport Properties in the Inversion Layer of Bulk and SOI MOSFETs: a Monte-Carlo Study | 1-gen-2004 | Lucci, Luca; Esseni, David; Palestri, Pierpaolo; Selmi, Luca | |
| Comparative evaluation of Tunnel-FET ultra-low voltage SRAM bitcell and impact of variations | 1-gen-2014 | Alioto, M.; Esseni, David | |
| Comparison between Pseudospectral and Discrete Geometric Methods for Modelling Quantization Effects in Nanoscale Electron Devices | 1-gen-2011 | Trevisan, Francesco; Specogna, Ruben; Breda, Dimitri; Esseni, David; Paussa, Alan; Vermiglio, Rossana | |
| Comparison of Advanced Transport Models for Nanoscale nMOSFETS | 1-gen-2009 | Palestri, Pierpaolo; Alexander, C; Asenov, A; Baccarani, G; Bournel, A; Braccioli, M; Cheng, B; Dollfus, P; Esposito, A; Esseni, David; Ghetti, A; Fiegna, C; Fiori, G; AUBRY FORTUNA, V; Iannaccone, G; Martinez, A; Majkusiak, B; Monfray, B; Reggiani, S; Riddet, C; SAINT MARTIN, J; Sangiorgi, E; Schenk, A; Selmi, Luca; Silvestri, L; Walczak, J. | |
| Comparison of BULK and Ultra-Thin Double Gate SOI MOSFETs for the 65 nm Technology Node: A Monte Carlo Study | 1-gen-2005 | M., Braccioli; S., Eminente; Palestri, Pierpaolo; Esseni, David; C., Fiegna | |
| Comparison of Semiclassical Transport Formulations Including Quantum Corrections for Advanced Devices with High-K Gate Stacks | 1-gen-2010 | Bufler, F. M.; AUBRY FORTUNA, V; Bournel, A; Braccioli, M; Dollfus, P; Esseni, David; Fiegna, C; Gamizk, F; DE MICHIELIS, Marco; Palestri, Pierpaolo; SAINT MARTIN, J; Sampedrok, C; Sangiorgi, E; Selmi, Luca; Toniutti, Paolo | |
| Continuous Semiempirical Model for the CurrentVoltage Characteristics of Tunnel FETs | 1-gen-2014 | Hao, Lu; J. W., Kim; Esseni, David; A., Seabaugh | |
| Design and evaluation of mixed 3T-4T FinFET stacks for leakage reduction | 1-gen-2009 | Agostinelli, M; Alioto, M; Esseni, David; Selmi, Luca | |
| Design of UWB LNA in 45nm CMOS Technology: Planar Bulk vs. FinFET | 1-gen-2008 | D., Ponton; Palestri, Pierpaolo; Esseni, David; Selmi, Luca; M., Tiebout; B., Parvais; G., Knoblinger |
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Opzioni
Scopri
Tipologia
- 4 Contributo in Atti di Convegno ... 159
- 4 Contributo in Atti di Convegno ... 159
Data di pubblicazione
- 2020 - 2023 16
- 2010 - 2019 72
- 2000 - 2009 64
- 1994 - 1999 7
Editore
- IEEE 29
- Institute of Electrical and Elect... 15
- Editions Frontieres 2
- Association for Computing Machinery 1
- DIEGM - Università degli Studi di... 1
- Springer Wien New York 1
Rivista
- ECS TRANSACTIONS 1
- MICROELECTRONIC ENGINEERING 1
- PROCEEDINGS OF THE EUROPEAN SOLID... 1
- SOLID-STATE ELECTRONICS 1
Serie
- INTERNATIONAL CONFERENCE ON SIMUL... 2
- PROCEEDINGS OF THE EUROPEAN SOLID... 2
- TECHNICAL DIGEST - INTERNATIONAL ... 2
Keyword
- Electrical and Electronic Enginee... 5
- FinFETs 4
- Electronic 3
- Field effect transistors 3
- Integrated circuit modeling 3
- Logic gates 3
- NEGF 3
- Neuromorphic Computing 3
- Optical and Magnetic Materials 3
- Scattering 3
Lingua
- eng 118
Accesso al fulltext
- reserved 96
- no fulltext 50
- partially open 6
- restricted 5
- open 2