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EnglishIn this paper, the effect of biaxial strain on the mobility of single-layer transition metal dichalcogenides (MoS2, MoSe2, WS2 , and WSe2) is investigated by accounting for the scattering from intrinsic phonon modes, remote phonons, and charged impurities. Ab ini t io simulations are employed to study a strain-induced effect on the electronic bandstructure, and the linearized Boltzmann transport equation is used to evaluate the low-field mobility. The results indicate that tensile strain increases the mobility. In particular, a significant increase in the mobility of single-layer MoSe2 andWSe2 with a relatively small tensile strain is observed. Under a compressive strain, however, the mobility exhibits a nonmonotonic behavior. With a relatively small compressive strain, the mobility decreases and then it partially recovers with a further increase in the compressive strain.
| Titolo: | Strain-Induced Modulation of Electron Mobility in Single-Layer Transition Metal Dichalcogenides MX2 (M = Mo, W; X = S, Se) | |
| Autori: | ||
| Data di pubblicazione: | 2015 | |
| Rivista: | ||
| Abstract: | In this paper, the effect of biaxial strain on the mobility of single-layer transition metal dichalcogenides (MoS2, MoSe2, WS2 , and WSe2) is investigated by accounting for the scattering from intrinsic phonon modes, remote phonons, and charged impurities. Ab ini t io simulations are employed to study a strain-induced effect on the electronic bandstructure, and the linearized Boltzmann transport equation is used to evaluate the low-field mobility. The results indicate that tensile strain increases the mobility. In particular, a significant increase in the mobility of single-layer MoSe2 andWSe2 with a relatively small tensile strain is observed. Under a compressive strain, however, the mobility exhibits a nonmonotonic behavior. With a relatively small compressive strain, the mobility decreases and then it partially recovers with a further increase in the compressive strain. | |
| Handle: | http://hdl.handle.net/11390/1070654 | |
| Appare nelle tipologie: | 1.1 Articolo in rivista |
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