We review recent results on the effect of surface roughness on the transport properties of ultra-short devices like Silicon nanowire and double-gate FETs. We use a full quantum treatment within the non equilibrium Green's function (NEGF) formalism which allows us to take into account quantum confinement, quantum phase interference, out-of-equilibrium, and quasi-ballistic transport and focus on transfer characteristics and low-field mobility.
Full quantum treatment of surface roughness effects in Silicon nanowire and double gate FETs
Pala M;
2009-01-01
Abstract
We review recent results on the effect of surface roughness on the transport properties of ultra-short devices like Silicon nanowire and double-gate FETs. We use a full quantum treatment within the non equilibrium Green's function (NEGF) formalism which allows us to take into account quantum confinement, quantum phase interference, out-of-equilibrium, and quasi-ballistic transport and focus on transfer characteristics and low-field mobility.File in questo prodotto:
Non ci sono file associati a questo prodotto.
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
