This paper aims at comparing the pseudospectral method and discrete geometric approach for modeling quantization effects in nanoscale devices. To this purpose, we implemented a simulation tool, based on both methods, to solve a self-consistent Schrdinger-Poisson coupled problem for a 2-D electron carrier confinement according to the effective mass approximation model (suitable for FinFETs and nanowire FETs).

Comparison between Pseudospectral and Discrete Geometric Methods for Modelling Quantization Effects in Nanoscale Electron Devices

BREDA, Dimitri;ESSENI, David;PAUSSA, Alan;SPECOGNA, Ruben;TREVISAN, Francesco;VERMIGLIO, Rossana
2012-01-01

Abstract

This paper aims at comparing the pseudospectral method and discrete geometric approach for modeling quantization effects in nanoscale devices. To this purpose, we implemented a simulation tool, based on both methods, to solve a self-consistent Schrdinger-Poisson coupled problem for a 2-D electron carrier confinement according to the effective mass approximation model (suitable for FinFETs and nanowire FETs).
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11390/881551
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