This paper aims at comparing the pseudospectral method and discrete geometric approach for modeling quantization effects in nanoscale devices. To this purpose, we implemented a simulation tool, based on both methods, to solve a self-consistent Schrdinger-Poisson coupled problem for a 2-D electron carrier confinement according to the effective mass approximation model (suitable for FinFETs and nanowire FETs).
Comparison between Pseudospectral and Discrete Geometric Methods for Modelling Quantization Effects in Nanoscale Electron Devices
BREDA, Dimitri;ESSENI, David;PAUSSA, Alan;SPECOGNA, Ruben;TREVISAN, Francesco;VERMIGLIO, Rossana
2012-01-01
Abstract
This paper aims at comparing the pseudospectral method and discrete geometric approach for modeling quantization effects in nanoscale devices. To this purpose, we implemented a simulation tool, based on both methods, to solve a self-consistent Schrdinger-Poisson coupled problem for a 2-D electron carrier confinement according to the effective mass approximation model (suitable for FinFETs and nanowire FETs).File in questo prodotto:
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