The five invited papers and 11 contributed papers in this special issue discuss topics such as process variation, device variability, hierarchical modeling tools, and address challenges such as device mismatch and SRAM noise margin variability.
Foreword Special Issue on Characterization of Nano CMOS Variability by Simulation and Measurements
ESSENI, David;
2011-01-01
Abstract
The five invited papers and 11 contributed papers in this special issue discuss topics such as process variation, device variability, hierarchical modeling tools, and address challenges such as device mismatch and SRAM noise margin variability.File in questo prodotto:
File | Dimensione | Formato | |
---|---|---|---|
Sangiorgi_TED_2011.pdf
non disponibili
Tipologia:
Documento in Post-print
Licenza:
Non pubblico
Dimensione
317.8 kB
Formato
Adobe PDF
|
317.8 kB | Adobe PDF | Visualizza/Apri Richiedi una copia |
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.