statistiche ricercatore

Continente	#
NA - Nord America	1.418
AS - Asia	425
EU - Europa	361
SA - Sud America	44
AF - Africa	7
Continente sconosciuto - Info sul continente non disponibili	1
Totale	2.256

Nazione	#
US - Stati Uniti d'America	1.404
SG - Singapore	205
IT - Italia	98
CN - Cina	97
UA - Ucraina	63
DE - Germania	53
HK - Hong Kong	39
BR - Brasile	34
VN - Vietnam	33
RU - Federazione Russa	29
SE - Svezia	24
TR - Turchia	21
FI - Finlandia	18
IE - Irlanda	14
GB - Regno Unito	13
FR - Francia	10
CA - Canada	8
AR - Argentina	5
AT - Austria	5
CH - Svizzera	5
ES - Italia	5
IN - India	5
JP - Giappone	5
PL - Polonia	5
BE - Belgio	4
GR - Grecia	3
MX - Messico	3
NL - Olanda	3
ZA - Sudafrica	3
BD - Bangladesh	2
CR - Costa Rica	2
DK - Danimarca	2
EC - Ecuador	2
LK - Sri Lanka	2
SA - Arabia Saudita	2
AE - Emirati Arabi Uniti	1
AZ - Azerbaigian	1
CZ - Repubblica Ceca	1
EU - Europa	1
GM - Gambi	1
HR - Croazia	1
HU - Ungheria	1
ID - Indonesia	1
IQ - Iraq	1
IR - Iran	1
KE - Kenya	1
KG - Kirghizistan	1
KR - Corea	1
LA - Repubblica Popolare Democratica del Laos	1
LB - Libano	1
LC - Santa Lucia	1
LU - Lussemburgo	1
MA - Marocco	1
MN - Mongolia	1
NO - Norvegia	1
PH - Filippine	1
PK - Pakistan	1
PT - Portogallo	1
PY - Paraguay	1
RO - Romania	1
SN - Senegal	1
TJ - Tagikistan	1
UY - Uruguay	1
UZ - Uzbekistan	1
VE - Venezuela	1
Totale	2.256

Nome	#
New device concepts, transistor architectures and materials for high performance and energy efficient CMOS circuits in the forthcoming era of 3D integrated circuits	205
State-of-the-art semi-classical Monte Carlo method for carrier transport in nanoscale transistors	204
Backscattering and common-base current gain of the Graphene Base Transistor (GBT)	200
Backscattering and common-base current gain of the Graphene Base Transistor (GBT)	182
DFT study of graphene doping due to metal contacts	165
Going ballistic: Graphene hot electron transistors	159
Simulation of DC and RF Performance of the Graphene Base Transistor	154
Improved understanding of metal–graphene contacts	153
Electrical Compact Modeling of Graphene Base Transistors	149
On the Adequacy of the Transmission Line Model to Describe the Graphene-Metal Contact Resistance	147
Detailed characterization and critical discussion of series resistance in graphene-metal contacts	145
Reliability analysis of the metal-graphene contact resistance extracted by the transfer length method	134
Modeling and Simulation of Graphene-Based Devices for RF Applications	107
Dependability Assessment of Transfer Length Method to Extract the Metal–Graphene Contact Resistance	81
Dependable Contact Related Parameter Extraction in Graphene–Metal Junctions	79
Simulation Study of the Graphene Base Transistor	77
Totale	2.341

	Totale	Lug	Ago	Sett	Ott	Nov	Dic	Gen	Feb	Mar	Apr	Mag	Giu
2020/2021	155	0	0	0	0	0	33	7	28	23	17	17	30
2021/2022	151	8	12	9	4	0	5	11	7	4	25	45	21
2022/2023	223	19	33	2	36	22	51	0	20	27	0	7	6
2023/2024	63	8	6	0	0	19	2	1	9	3	1	4	10
2024/2025	299	6	18	32	7	5	39	30	24	23	26	38	51
2025/2026	385	29	64	26	81	148	37	0	0	0	0	0	0
Totale													2.341