statistiche ricercatore

Continente	#
NA - Nord America	1.686
AS - Asia	488
EU - Europa	403
Continente sconosciuto - Info sul continente non disponibili	86
SA - Sud America	59
AF - Africa	9
Totale	2.731

Nazione	#
US - Stati Uniti d'America	1.661
SG - Singapore	239
IT - Italia	108
CN - Cina	100
UA - Ucraina	63
DE - Germania	57
HK - Hong Kong	42
VN - Vietnam	42
BR - Brasile	41
RU - Federazione Russa	29
FI - Finlandia	24
SE - Svezia	24
FR - Francia	23
TR - Turchia	23
CA - Canada	15
GB - Regno Unito	15
IE - Irlanda	15
IN - India	8
AR - Argentina	7
ES - Italia	6
AT - Austria	5
BE - Belgio	5
CH - Svizzera	5
EC - Ecuador	5
JP - Giappone	5
NL - Olanda	5
PL - Polonia	5
MX - Messico	4
ZA - Sudafrica	4
BD - Bangladesh	3
CR - Costa Rica	3
GR - Grecia	3
PH - Filippine	3
CO - Colombia	2
DK - Danimarca	2
IQ - Iraq	2
LK - Sri Lanka	2
PK - Pakistan	2
SA - Arabia Saudita	2
UZ - Uzbekistan	2
VE - Venezuela	2
AE - Emirati Arabi Uniti	1
AO - Angola	1
AZ - Azerbaigian	1
BS - Bahamas	1
CZ - Repubblica Ceca	1
EU - Europa	1
GM - Gambi	1
HR - Croazia	1
HU - Ungheria	1
ID - Indonesia	1
IR - Iran	1
JO - Giordania	1
KE - Kenya	1
KG - Kirghizistan	1
KR - Corea	1
LA - Repubblica Popolare Democratica del Laos	1
LB - Libano	1
LC - Santa Lucia	1
LT - Lituania	1
LU - Lussemburgo	1
MA - Marocco	1
MC - Monaco	1
MN - Mongolia	1
MY - Malesia	1
NO - Norvegia	1
PT - Portogallo	1
PY - Paraguay	1
RO - Romania	1
SN - Senegal	1
SV - El Salvador	1
TH - Thailandia	1
TJ - Tagikistan	1
UY - Uruguay	1
Totale	2.646

Nome	#
Backscattering and common-base current gain of the Graphene Base Transistor (GBT)	225
State-of-the-art semi-classical Monte Carlo method for carrier transport in nanoscale transistors	220
New device concepts, transistor architectures and materials for high performance and energy efficient CMOS circuits in the forthcoming era of 3D integrated circuits	220
Backscattering and common-base current gain of the Graphene Base Transistor (GBT)	206
DFT study of graphene doping due to metal contacts	199
Improved understanding of metal–graphene contacts	187
Going ballistic: Graphene hot electron transistors	179
Electrical Compact Modeling of Graphene Base Transistors	178
Simulation of DC and RF Performance of the Graphene Base Transistor	176
On the Adequacy of the Transmission Line Model to Describe the Graphene-Metal Contact Resistance	176
Detailed characterization and critical discussion of series resistance in graphene-metal contacts	167
Reliability analysis of the metal-graphene contact resistance extracted by the transfer length method	152
Modeling and Simulation of Graphene-Based Devices for RF Applications	147
Dependability Assessment of Transfer Length Method to Extract the Metal–Graphene Contact Resistance	109
Simulation Study of the Graphene Base Transistor	99
Dependable Contact Related Parameter Extraction in Graphene–Metal Junctions	91
Totale	2.731

	Totale	Lug	Ago	Sett	Ott	Nov	Dic	Gen	Feb	Mar	Apr	Mag	Giu
2021/2022	122	0	0	0	4	0	5	11	7	4	25	45	21
2022/2023	223	19	33	2	36	22	51	0	20	27	0	7	6
2023/2024	63	8	6	0	0	19	2	1	9	3	1	4	10
2024/2025	299	6	18	32	7	5	39	30	24	23	26	38	51
2025/2026	639	29	64	26	81	148	54	98	13	39	41	34	12
2026/2027	136	20	38	60	18	0	0	0	0	0	0	0	0
Totale													2.731