statistiche ricercatore

Continente	#
NA - Nord America	1.621
AS - Asia	486
EU - Europa	397
Continente sconosciuto - Info sul continente non disponibili	86
SA - Sud America	52
AF - Africa	9
Totale	2.651

Nazione	#
US - Stati Uniti d'America	1.599
SG - Singapore	238
IT - Italia	107
CN - Cina	100
UA - Ucraina	63
DE - Germania	57
HK - Hong Kong	42
VN - Vietnam	41
BR - Brasile	38
RU - Federazione Russa	29
SE - Svezia	24
FI - Finlandia	23
FR - Francia	23
TR - Turchia	23
GB - Regno Unito	15
IE - Irlanda	15
CA - Canada	13
IN - India	8
AR - Argentina	6
AT - Austria	5
CH - Svizzera	5
ES - Italia	5
JP - Giappone	5
NL - Olanda	5
PL - Polonia	5
BE - Belgio	4
EC - Ecuador	4
MX - Messico	4
ZA - Sudafrica	4
BD - Bangladesh	3
GR - Grecia	3
PH - Filippine	3
CR - Costa Rica	2
DK - Danimarca	2
IQ - Iraq	2
LK - Sri Lanka	2
PK - Pakistan	2
SA - Arabia Saudita	2
UZ - Uzbekistan	2
VE - Venezuela	2
AE - Emirati Arabi Uniti	1
AO - Angola	1
AZ - Azerbaigian	1
BS - Bahamas	1
CZ - Repubblica Ceca	1
EU - Europa	1
GM - Gambi	1
HR - Croazia	1
HU - Ungheria	1
ID - Indonesia	1
IR - Iran	1
JO - Giordania	1
KE - Kenya	1
KG - Kirghizistan	1
KR - Corea	1
LA - Repubblica Popolare Democratica del Laos	1
LB - Libano	1
LC - Santa Lucia	1
LU - Lussemburgo	1
MA - Marocco	1
MN - Mongolia	1
MY - Malesia	1
NO - Norvegia	1
PT - Portogallo	1
PY - Paraguay	1
RO - Romania	1
SN - Senegal	1
SV - El Salvador	1
TH - Thailandia	1
TJ - Tagikistan	1
UY - Uruguay	1
Totale	2.566

Nome	#
Backscattering and common-base current gain of the Graphene Base Transistor (GBT)	222
State-of-the-art semi-classical Monte Carlo method for carrier transport in nanoscale transistors	218
New device concepts, transistor architectures and materials for high performance and energy efficient CMOS circuits in the forthcoming era of 3D integrated circuits	217
Backscattering and common-base current gain of the Graphene Base Transistor (GBT)	201
DFT study of graphene doping due to metal contacts	193
Improved understanding of metal–graphene contacts	177
Going ballistic: Graphene hot electron transistors	177
Simulation of DC and RF Performance of the Graphene Base Transistor	174
On the Adequacy of the Transmission Line Model to Describe the Graphene-Metal Contact Resistance	172
Electrical Compact Modeling of Graphene Base Transistors	167
Detailed characterization and critical discussion of series resistance in graphene-metal contacts	163
Reliability analysis of the metal-graphene contact resistance extracted by the transfer length method	147
Modeling and Simulation of Graphene-Based Devices for RF Applications	138
Dependability Assessment of Transfer Length Method to Extract the Metal–Graphene Contact Resistance	102
Simulation Study of the Graphene Base Transistor	95
Dependable Contact Related Parameter Extraction in Graphene–Metal Junctions	88
Totale	2.651

	Totale	Lug	Ago	Sett	Ott	Nov	Dic	Gen	Feb	Mar	Apr	Mag	Giu
2021/2022	143	0	12	9	4	0	5	11	7	4	25	45	21
2022/2023	223	19	33	2	36	22	51	0	20	27	0	7	6
2023/2024	63	8	6	0	0	19	2	1	9	3	1	4	10
2024/2025	299	6	18	32	7	5	39	30	24	23	26	38	51
2025/2026	639	29	64	26	81	148	54	98	13	39	41	34	12
2026/2027	56	20	36	0	0	0	0	0	0	0	0	0	0
Totale													2.651