statistiche ricercatore

Continente	#
NA - Nord America	1.569
AS - Asia	485
EU - Europa	391
SA - Sud America	51
AF - Africa	9
Continente sconosciuto - Info sul continente non disponibili	1
Totale	2.506

Nazione	#
US - Stati Uniti d'America	1.550
SG - Singapore	238
IT - Italia	101
CN - Cina	99
UA - Ucraina	63
DE - Germania	57
HK - Hong Kong	42
VN - Vietnam	41
BR - Brasile	37
RU - Federazione Russa	29
SE - Svezia	24
FI - Finlandia	23
FR - Francia	23
TR - Turchia	23
GB - Regno Unito	15
IE - Irlanda	15
CA - Canada	12
IN - India	8
AR - Argentina	6
AT - Austria	5
CH - Svizzera	5
ES - Italia	5
JP - Giappone	5
NL - Olanda	5
PL - Polonia	5
BE - Belgio	4
EC - Ecuador	4
MX - Messico	4
ZA - Sudafrica	4
BD - Bangladesh	3
GR - Grecia	3
PH - Filippine	3
CR - Costa Rica	2
DK - Danimarca	2
IQ - Iraq	2
LK - Sri Lanka	2
PK - Pakistan	2
SA - Arabia Saudita	2
UZ - Uzbekistan	2
VE - Venezuela	2
AE - Emirati Arabi Uniti	1
AO - Angola	1
AZ - Azerbaigian	1
CZ - Repubblica Ceca	1
EU - Europa	1
GM - Gambi	1
HR - Croazia	1
HU - Ungheria	1
ID - Indonesia	1
IR - Iran	1
JO - Giordania	1
KE - Kenya	1
KG - Kirghizistan	1
KR - Corea	1
LA - Repubblica Popolare Democratica del Laos	1
LB - Libano	1
LC - Santa Lucia	1
LU - Lussemburgo	1
MA - Marocco	1
MN - Mongolia	1
MY - Malesia	1
NO - Norvegia	1
PT - Portogallo	1
PY - Paraguay	1
RO - Romania	1
SN - Senegal	1
TH - Thailandia	1
TJ - Tagikistan	1
UY - Uruguay	1
Totale	2.506

Nome	#
Backscattering and common-base current gain of the Graphene Base Transistor (GBT)	218
New device concepts, transistor architectures and materials for high performance and energy efficient CMOS circuits in the forthcoming era of 3D integrated circuits	214
State-of-the-art semi-classical Monte Carlo method for carrier transport in nanoscale transistors	213
Backscattering and common-base current gain of the Graphene Base Transistor (GBT)	195
DFT study of graphene doping due to metal contacts	188
Improved understanding of metal–graphene contacts	174
Going ballistic: Graphene hot electron transistors	173
Simulation of DC and RF Performance of the Graphene Base Transistor	170
On the Adequacy of the Transmission Line Model to Describe the Graphene-Metal Contact Resistance	170
Electrical Compact Modeling of Graphene Base Transistors	166
Detailed characterization and critical discussion of series resistance in graphene-metal contacts	157
Reliability analysis of the metal-graphene contact resistance extracted by the transfer length method	144
Modeling and Simulation of Graphene-Based Devices for RF Applications	132
Dependability Assessment of Transfer Length Method to Extract the Metal–Graphene Contact Resistance	101
Simulation Study of the Graphene Base Transistor	89
Dependable Contact Related Parameter Extraction in Graphene–Metal Junctions	87
Totale	2.591

	Totale	Lug	Ago	Sett	Ott	Nov	Dic	Gen	Feb	Mar	Apr	Mag	Giu
2020/2021	30	0	0	0	0	0	0	0	0	0	0	0	30
2021/2022	151	8	12	9	4	0	5	11	7	4	25	45	21
2022/2023	223	19	33	2	36	22	51	0	20	27	0	7	6
2023/2024	63	8	6	0	0	19	2	1	9	3	1	4	10
2024/2025	299	6	18	32	7	5	39	30	24	23	26	38	51
2025/2026	635	29	64	26	81	148	54	98	13	39	41	34	8
Totale													2.591