VIANELLO, Elisa
 Distribuzione geografica
Continente #
NA - Nord America 1.007
EU - Europa 195
AS - Asia 87
AF - Africa 1
Totale 1.290
Nazione #
US - Stati Uniti d'America 1.004
UA - Ucraina 75
DE - Germania 42
SG - Singapore 39
CN - Cina 36
FI - Finlandia 26
IT - Italia 25
IE - Irlanda 14
RU - Federazione Russa 8
TR - Turchia 8
CA - Canada 2
AM - Armenia 1
AZ - Azerbaigian 1
BG - Bulgaria 1
CZ - Repubblica Ceca 1
GB - Regno Unito 1
GR - Grecia 1
KR - Corea 1
MA - Marocco 1
PA - Panama 1
SK - Slovacchia (Repubblica Slovacca) 1
TW - Taiwan 1
Totale 1.290
Città #
Woodbridge 172
Fairfield 146
Ann Arbor 90
Houston 70
Cambridge 64
Chandler 61
Ashburn 55
Seattle 55
Jacksonville 52
Wilmington 50
Singapore 30
Dearborn 25
Beijing 19
Dublin 14
Boardman 13
Princeton 13
Udine 9
Izmir 8
Dallas 7
San Diego 5
Jinan 4
Norwalk 4
Ogden 4
Hefei 3
New York 3
Ottawa 2
Baku 1
Bratislava 1
Brno 1
Chengdu 1
Fuzhou 1
Indiana 1
Kunming 1
Los Angeles 1
Nanchang 1
Nanjing 1
Panama City 1
Shanghai 1
Shenyang 1
Sofia 1
Taipei 1
Wuhan 1
Yerevan 1
Totale 995
Nome #
Experimental characterization of the vertical position of the trapped charge in Si nitride-based nonvolatile memory cells 130
Experimental and Simulation Analysis of Program/Retention Transients in Silicon Nitride-Based NVM Cells 120
An in-depth investigation of physical mechanisms governing SANOS memories characteristics 115
Explanation of SILC probability density distributions with nonuniform generation of traps in the tunnel oxide of flash memory arrays 113
Explanation of the Charge-Trapping Properties of Silicon Nitride Storage Layers for NVM Devices Part I: Experimental Evidences From Physical and Electrical Characterizations 110
Study of defects in Al2O3 blocking layers of TANOS memories by atomistic simulation, electrical characterization and physico-chemical material analyses 101
Charge Localization during Program and Retention in Nitrided Read Only Memory-Like Nonvolatile Memory Devices 101
A Consistent Explanation of the Role of the SiN Composition on the Program/Retention Characteristics of MANOS and NROM like Memories 99
Direct Probing of Trapped Charge Dynamics in SiN by Kelvin Force Microscopy 92
Experimental and simulation study of the program efficiency of HfO2 based charge trapping memories 91
New insight on the charge trapping mechanisms of SiN--based memory by atomistic simulations and electrical modeling 83
Reliability of charge trapping memories with high-k control dielectrics 72
Explanation of the Charge Trapping Properties of Silicon Nitride Storage Layers for NVMs - Part II: Atomistic and Electrical Modeling 64
Totale 1.291
Categoria #
all - tutte 4.069
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 4.069


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/2020228 0 0 0 0 0 55 37 44 29 34 8 21
2020/2021173 5 38 5 22 6 18 10 15 24 5 19 6
2021/2022114 7 6 0 1 0 9 4 3 1 23 46 14
2022/2023120 13 23 0 16 6 26 0 8 16 1 3 8
2023/202446 10 5 0 2 5 3 0 0 6 1 0 14
2024/202567 3 24 21 0 10 9 0 0 0 0 0 0
Totale 1.291