VIANELLO, Elisa
 Distribuzione geografica
Continente #
NA - Nord America 1.031
EU - Europa 227
AS - Asia 124
SA - Sud America 6
AF - Africa 2
Totale 1.390
Nazione #
US - Stati Uniti d'America 1.026
UA - Ucraina 75
SG - Singapore 70
DE - Germania 52
CN - Cina 37
FI - Finlandia 26
IT - Italia 25
RU - Federazione Russa 24
IE - Irlanda 14
TR - Turchia 9
BR - Brasile 6
CA - Canada 3
FR - Francia 3
GB - Regno Unito 3
KR - Corea 3
AM - Armenia 1
AZ - Azerbaigian 1
BG - Bulgaria 1
CR - Costa Rica 1
CZ - Repubblica Ceca 1
DZ - Algeria 1
GR - Grecia 1
KG - Kirghizistan 1
LV - Lettonia 1
MA - Marocco 1
PA - Panama 1
PH - Filippine 1
SK - Slovacchia (Repubblica Slovacca) 1
TW - Taiwan 1
Totale 1.390
Città #
Woodbridge 172
Fairfield 146
Ann Arbor 90
Houston 70
Cambridge 64
Chandler 61
Ashburn 56
Seattle 55
Jacksonville 52
Wilmington 50
Singapore 41
Dearborn 25
Beijing 19
Dublin 14
Boardman 13
Princeton 13
Udine 9
Izmir 8
Dallas 7
Düsseldorf 6
San Diego 5
Jinan 4
Norwalk 4
Ogden 4
Hefei 3
New York 3
Brooklyn 2
Frankfurt am Main 2
Los Angeles 2
Ottawa 2
Portsmouth 2
Seoul 2
Baku 1
Bishkek 1
Boston 1
Bratislava 1
Brno 1
Calgary 1
Cebu City 1
Cerquilho 1
Chengdu 1
Denver 1
Dom Eliseu 1
Florianópolis 1
Fuzhou 1
Guarulhos 1
Indiana 1
Jaboatão dos Guararapes 1
Kunming 1
Munich 1
Nanchang 1
Nanjing 1
Nuremberg 1
Panama City 1
Riga 1
San Francisco 1
San José 1
Serra Talhada 1
Shanghai 1
Shenyang 1
Sofia 1
Taipei 1
Tizi Ouzou 1
Wuhan 1
Yerevan 1
Totale 1.039
Nome #
Experimental characterization of the vertical position of the trapped charge in Si nitride-based nonvolatile memory cells 137
Experimental and Simulation Analysis of Program/Retention Transients in Silicon Nitride-Based NVM Cells 129
An in-depth investigation of physical mechanisms governing SANOS memories characteristics 124
Explanation of SILC probability density distributions with nonuniform generation of traps in the tunnel oxide of flash memory arrays 123
Explanation of the Charge-Trapping Properties of Silicon Nitride Storage Layers for NVM Devices Part I: Experimental Evidences From Physical and Electrical Characterizations 119
Study of defects in Al2O3 blocking layers of TANOS memories by atomistic simulation, electrical characterization and physico-chemical material analyses 109
A Consistent Explanation of the Role of the SiN Composition on the Program/Retention Characteristics of MANOS and NROM like Memories 108
Charge Localization during Program and Retention in Nitrided Read Only Memory-Like Nonvolatile Memory Devices 106
Experimental and simulation study of the program efficiency of HfO2 based charge trapping memories 100
Direct Probing of Trapped Charge Dynamics in SiN by Kelvin Force Microscopy 98
New insight on the charge trapping mechanisms of SiN--based memory by atomistic simulations and electrical modeling 90
Reliability of charge trapping memories with high-k control dielectrics 79
Explanation of the Charge Trapping Properties of Silicon Nitride Storage Layers for NVMs - Part II: Atomistic and Electrical Modeling 69
Totale 1.391
Categoria #
all - tutte 4.670
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 4.670


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/202029 0 0 0 0 0 0 0 0 0 0 8 21
2020/2021173 5 38 5 22 6 18 10 15 24 5 19 6
2021/2022114 7 6 0 1 0 9 4 3 1 23 46 14
2022/2023120 13 23 0 16 6 26 0 8 16 1 3 8
2023/202446 10 5 0 2 5 3 0 0 6 1 0 14
2024/2025167 3 24 21 0 10 9 16 4 33 20 27 0
Totale 1.391