IRIS
VIANELLO, Elisa
 Distribuzione geografica
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Continente #
NA - Nord America 1.003
EU - Europa 186
AS - Asia 82
Totale 1.271
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Nazione #
US - Stati Uniti d'America 1.001
UA - Ucraina 75
DE - Germania 42
CN - Cina 36
SG - Singapore 36
FI - Finlandia 26
IT - Italia 24
IE - Irlanda 14
TR - Turchia 8
CA - Canada 2
RU - Federazione Russa 2
CZ - Repubblica Ceca 1
GB - Regno Unito 1
GR - Grecia 1
KR - Corea 1
TW - Taiwan 1
Totale 1.271
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Città #
Woodbridge 172
Fairfield 146
Ann Arbor 90
Houston 70
Cambridge 64
Chandler 61
Ashburn 55
Seattle 54
Jacksonville 52
Wilmington 50
Singapore 28
Dearborn 25
Beijing 19
Dublin 14
Boardman 13
Princeton 13
Udine 9
Izmir 8
Dallas 7
San Diego 5
Jinan 4
Norwalk 4
Ogden 4
Hefei 3
New York 3
Ottawa 2
Brno 1
Chengdu 1
Fuzhou 1
Indiana 1
Kunming 1
Nanchang 1
Nanjing 1
Shanghai 1
Shenyang 1
Taipei 1
Wuhan 1
Totale 986
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Nome #
Experimental characterization of the vertical position of the trapped charge in Si nitride-based nonvolatile memory cells 129
Experimental and Simulation Analysis of Program/Retention Transients in Silicon Nitride-Based NVM Cells 118
An in-depth investigation of physical mechanisms governing SANOS memories characteristics 115
Explanation of SILC probability density distributions with nonuniform generation of traps in the tunnel oxide of flash memory arrays 111
Explanation of the Charge-Trapping Properties of Silicon Nitride Storage Layers for NVM Devices Part I: Experimental Evidences From Physical and Electrical Characterizations 108
Study of defects in Al2O3 blocking layers of TANOS memories by atomistic simulation, electrical characterization and physico-chemical material analyses 100
Charge Localization during Program and Retention in Nitrided Read Only Memory-Like Nonvolatile Memory Devices 100
A Consistent Explanation of the Role of the SiN Composition on the Program/Retention Characteristics of MANOS and NROM like Memories 97
Experimental and simulation study of the program efficiency of HfO2 based charge trapping memories 91
Direct Probing of Trapped Charge Dynamics in SiN by Kelvin Force Microscopy 90
New insight on the charge trapping mechanisms of SiN--based memory by atomistic simulations and electrical modeling 81
Reliability of charge trapping memories with high-k control dielectrics 70
Explanation of the Charge Trapping Properties of Silicon Nitride Storage Layers for NVMs - Part II: Atomistic and Electrical Modeling 62
Totale 1.272
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Categoria #
all - tutte 3.816
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 3.816
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/2020319 0 0 0 63 28 55 37 44 29 34 8 21
2020/2021173 5 38 5 22 6 18 10 15 24 5 19 6
2021/2022114 7 6 0 1 0 9 4 3 1 23 46 14
2022/2023120 13 23 0 16 6 26 0 8 16 1 3 8
2023/202446 10 5 0 2 5 3 0 0 6 1 0 14
2024/202548 3 24 21 0 0 0 0 0 0 0 0 0
Totale 1.272