IRIS
VIANELLO, Elisa
 Distribuzione geografica
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Continente #
NA - Nord America 978
EU - Europa 185
AS - Asia 46
Totale 1.209
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Nazione #
US - Stati Uniti d'America 976
UA - Ucraina 75
DE - Germania 42
CN - Cina 36
FI - Finlandia 26
IT - Italia 24
IE - Irlanda 14
TR - Turchia 8
CA - Canada 2
RU - Federazione Russa 2
GB - Regno Unito 1
GR - Grecia 1
KR - Corea 1
TW - Taiwan 1
Totale 1.209
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Città #
Woodbridge 172
Fairfield 146
Ann Arbor 90
Houston 70
Cambridge 64
Chandler 61
Ashburn 55
Seattle 54
Jacksonville 52
Wilmington 50
Dearborn 25
Beijing 19
Dublin 14
Princeton 13
Udine 9
Izmir 8
San Diego 5
Jinan 4
Norwalk 4
Ogden 4
Hefei 3
New York 3
Ottawa 2
Chengdu 1
Fuzhou 1
Indiana 1
Kunming 1
Nanchang 1
Nanjing 1
Shanghai 1
Shenyang 1
Taipei 1
Wuhan 1
Totale 937
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Nome #
Experimental characterization of the vertical position of the trapped charge in Si nitride-based nonvolatile memory cells 124
Experimental and Simulation Analysis of Program/Retention Transients in Silicon Nitride-Based NVM Cells 115
An in-depth investigation of physical mechanisms governing SANOS memories characteristics 110
Explanation of SILC probability density distributions with nonuniform generation of traps in the tunnel oxide of flash memory arrays 106
Explanation of the Charge-Trapping Properties of Silicon Nitride Storage Layers for NVM Devices Part I: Experimental Evidences From Physical and Electrical Characterizations 102
Study of defects in Al2O3 blocking layers of TANOS memories by atomistic simulation, electrical characterization and physico-chemical material analyses 95
Charge Localization during Program and Retention in Nitrided Read Only Memory-Like Nonvolatile Memory Devices 95
A Consistent Explanation of the Role of the SiN Composition on the Program/Retention Characteristics of MANOS and NROM like Memories 92
Experimental and simulation study of the program efficiency of HfO2 based charge trapping memories 86
Direct Probing of Trapped Charge Dynamics in SiN by Kelvin Force Microscopy 85
New insight on the charge trapping mechanisms of SiN--based memory by atomistic simulations and electrical modeling 76
Reliability of charge trapping memories with high-k control dielectrics 67
Explanation of the Charge Trapping Properties of Silicon Nitride Storage Layers for NVMs - Part II: Atomistic and Electrical Modeling 57
Totale 1.210
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Categoria #
all - tutte 3.320
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 3.320
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2018/201942 0 0 0 0 0 0 0 0 0 0 0 42
2019/2020369 20 14 16 63 28 55 37 44 29 34 8 21
2020/2021173 5 38 5 22 6 18 10 15 24 5 19 6
2021/2022114 7 6 0 1 0 9 4 3 1 23 46 14
2022/2023120 13 23 0 16 6 26 0 8 16 1 3 8
2023/202432 10 5 0 2 5 3 0 0 6 1 0 0
Totale 1.210