IRIS
SANGIORGI, Enrico
 Distribuzione geografica
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Continente #
NA - Nord America 4.548
AS - Asia 1.648
EU - Europa 1.083
SA - Sud America 362
AF - Africa 47
Continente sconosciuto - Info sul continente non disponibili 12
OC - Oceania 2
Totale 7.702
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Nazione #
US - Stati Uniti d'America 4.488
SG - Singapore 815
UA - Ucraina 342
BR - Brasile 290
CN - Cina 276
DE - Germania 235
HK - Hong Kong 163
VN - Vietnam 158
FI - Finlandia 120
RU - Federazione Russa 96
FR - Francia 67
TR - Turchia 57
SE - Svezia 55
IT - Italia 52
IE - Irlanda 50
IN - India 39
CA - Canada 35
GB - Regno Unito 30
KR - Corea 28
AR - Argentina 25
BD - Bangladesh 24
EC - Ecuador 19
ZA - Sudafrica 16
MX - Messico 15
ID - Indonesia 14
IQ - Iraq 13
MA - Marocco 10
PK - Pakistan 8
NL - Olanda 7
PY - Paraguay 7
CL - Cile 6
CO - Colombia 5
DZ - Algeria 5
JO - Giordania 5
PH - Filippine 5
PL - Polonia 5
AT - Austria 4
BE - Belgio 4
JP - Giappone 4
TW - Taiwan 4
AE - Emirati Arabi Uniti 3
BO - Bolivia 3
EG - Egitto 3
ES - Italia 3
EU - Europa 3
KE - Kenya 3
MY - Malesia 3
PS - Palestinian Territory 3
TH - Thailandia 3
TN - Tunisia 3
UY - Uruguay 3
UZ - Uzbekistan 3
VE - Venezuela 3
AL - Albania 2
AU - Australia 2
CR - Costa Rica 2
CZ - Repubblica Ceca 2
ET - Etiopia 2
GR - Grecia 2
HU - Ungheria 2
IR - Iran 2
KG - Kirghizistan 2
KZ - Kazakistan 2
NP - Nepal 2
OM - Oman 2
PA - Panama 2
SA - Arabia Saudita 2
XK - ???statistics.table.value.countryCode.XK??? 2
AZ - Azerbaigian 1
BN - Brunei Darussalam 1
BS - Bahamas 1
CH - Svizzera 1
CY - Cipro 1
DO - Repubblica Dominicana 1
GT - Guatemala 1
IL - Israele 1
KH - Cambogia 1
KW - Kuwait 1
LB - Libano 1
LC - Santa Lucia 1
MD - Moldavia 1
MG - Madagascar 1
MM - Myanmar 1
NI - Nicaragua 1
NO - Norvegia 1
PT - Portogallo 1
RS - Serbia 1
SD - Sudan 1
SR - Suriname 1
TG - Togo 1
TT - Trinidad e Tobago 1
TZ - Tanzania 1
ZW - Zimbabwe 1
Totale 7.695
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Città #
Woodbridge 597
Ann Arbor 493
Fairfield 405
Singapore 267
Ashburn 259
Houston 255
Jacksonville 253
Chandler 243
Wilmington 176
Cambridge 171
Seattle 171
Hong Kong 161
Beijing 141
Dearborn 122
San Jose 120
New York 116
Boardman 69
Council Bluffs 68
Ho Chi Minh City 58
Princeton 57
Lauterbourg 54
The Dalles 52
Dublin 50
Los Angeles 49
Izmir 48
Buffalo 38
Hanoi 35
Dallas 28
Hefei 28
Seoul 27
Grafing 25
São Paulo 24
San Diego 21
San Mateo 21
Santa Clara 19
Ottawa 17
Des Moines 13
Norwalk 13
Düsseldorf 10
Ogden 10
Milan 9
Quito 9
Udine 9
Atlanta 8
Belo Horizonte 8
Chicago 8
Helsinki 8
Mumbai 8
Orem 8
Phoenix 8
San Francisco 8
Brasília 7
Denver 7
Haiphong 7
Johannesburg 7
Redondo Beach 7
Kunming 6
Moscow 6
Rio de Janeiro 6
Amman 5
Baghdad 5
Chennai 5
Curitiba 5
Da Nang 5
Frankfurt am Main 5
Hải Dương 5
Montreal 5
Nanjing 5
Porto Alegre 5
Shanghai 5
Warsaw 5
Washington 5
Anápolis 4
Asunción 4
Brooklyn 4
Casablanca 4
Caxias do Sul 4
Dhaka 4
Hangzhou 4
Munich 4
New Delhi 4
Palaiseau 4
Poplar 4
Rome 4
Salvador 4
Tokyo 4
Toronto 4
Agadir 3
Bogotá 3
Brussels 3
Bến Cầu 3
Cuiabá 3
Divinópolis 3
Fayetteville 3
Fort Worth 3
Fortaleza 3
Jacareí 3
La Paz 3
Lahore 3
Lomas de Zamora 3
Totale 5.092
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Nome #
Cathode Hot Electrons and Anode Hot Holes in Tunneling MOS Capacitors 220
An Experimental Study of Low Field Electron Mobility in Double-Gate, Ultra-Thin SOI MOSFETs 208
Effects of the interaction of neighboring structures on the Latch-up behavior of C-MOS ICs 201
Layout dependence of CMOS Latch-up 185
A Study of Injection Conditions in the Substrate Hot Electron Induced Degradation of n-MOSFETs 183
Effects of the interaction of neighboring structures on the Latch-up behavior of C-MOS ICs 179
A Comparative Study of Hot-Carrier Induced Light Emission and Degradation in Bulk and SOI MOSFETs 177
A combined transport-injection model for hot-electron and hot-hole injection in the gate oxide of MOS structures 172
Monitoring Hot Carrier Degradation in SOI MOSFETs by Hot Carrier Luminescence Techniques 170
A novel method to determine the Source and Drain resistances of individual MOSFETs 170
Analysis of Uniform Degradation in n-MOSFETs 169
Latch-up in CMOS circuits: a review 168
An Improved Test Structure to Characterize Ultra- Low Hot Carrier Injection in Homogeneous Conditions 164
Hot-Electron induced Photon Energies in n-channel MOSFET’s operating at 77 and 300 K 164
Bias and Temperature Dependence of Homogeneous Hot-Electron Injection from Silicon into Silicon Dioxide at Low Voltages 163
Parameter extraction from I-V characteristics of single MOSFETs 161
Monte-Carlo simulation of MOSFETs with band offsets in the source and drain 159
Impact Ionization and Photon Emission in MOS Capacitors and FETs 158
A Comparative Analysis of Substrate Current Generation Mechanisms in Tunneling MOS Capacitors 153
Bias and Temperature Dependence of Gate and Substrate Currents in n-MOSFETs at Low Drain Voltage 152
Hysteresis cycle in the Latch-up characteristic of wide CMOS structures 151
Device simulation for decananometer MOSFETs 149
Physically Based modeling of Low Field Electron Mobility in Ultrathin Single- and Double-Gate SOI n-MOSFETs 148
Energy Dependent Electron and Hole Impact Ionization in Si Bipolar Transistors 148
Photon Emission from sub-micron p-channel MOSFETs Biased at High Fields 141
Characterization and Modeling of Hot-Carrier Luminescence in Silicon n+/n/n+ Devices 136
Study of low field electron transport in ultra-thin single and double gate SOI MOSFETs 136
Evidence of Substrate Enhanced High Energy Tails in the Distribution Function of Deep Submicron MOSFETs by Light Emission Measurements 136
Non-Local Effects in p-MOSFET Substrate Hot Hole Injection Experiments 134
Analysis of highly non-uniform collector doping profiles for the optimization of the breakdown / speed trade off in advanced BJTs 134
A better insight in the performance of silicon bjt's featuring highly non-uniform collector doping profiles 133
Oxide Field Dependence of Electron Injection From Silicon into Silicon Dioxide 132
Two dimensional quantum simulation of silicon MOSFETs 131
Two-dimensional quantum mechanical simulation of charge distribution in silicon MOSFETs 129
Injection Efficiency of CHISEL Gate Currents in Short MOS Devices: Physical Mechanisms, Device Implications and Sensitivity to Technological Parameters", 126
Experimental Analysis of Polarization in the Hot-Carrier Luminescence of Silicon Devices 126
Non Local Electron and Hole Impact Ionization in Advanced Si BJTs 125
Substrate Enhanced Gate Currents in CMOS Devices 122
Coupled Monte Carlo Simulation of Si and SiO2 Transport in MOS Capacitors 120
Monte Carlo Simulation of Low Voltage Hot Carrier Effects in Non Volatile Memory Cells 117
Low Field Mobility of Ultra Thin SOI n- and p-MOSFETs: Measurement and Implications on the Performance of Ultra Short MOSFETs 115
Measurements of Low Field Mobility in Ultra Thin SOI n- and p-MOSFETs 114
Advanced Physically Based Device Modeling for Gate Current and Hot Carrier Phenomena in Scaled MOSFETs 112
Electron Injection in the Gate Oxide of MOS Structures at Liquid Nitrogen Temperature: Measurement and Simulation 109
A Test Chip and an Accurate Measurement System to Characterize Hot Hole Injection in the Gate Oxide of p-MOSFET’s 109
Three dimensional distribution of Latchup current in scaled CMOS structures 108
Measurement of the Hot Hole Injection Probability from Si Into SiO2 in p-MOSFET’s 103
On the Optimization of HALOs for 0.1 micron MOSFETs and Below 99
Short channel and hot carrier performance of ULSI MOSFETs with halo structures 97
Quantitative Assesment of mobility degradation by Remote Coulomb Scattering in Ultra-thin oxide MOSFETs: measurement and simulations 97
Modeling of Mobility in Ultra-Thin SOI MOSFETs: Physical Understanding and Analytical Models for Device Simulators 88
Monte Carlo simulation of program and erase charge distribution in NROM devices 83
Two-dimensional quantum mechanical aspects in the charge distribution of ULSI silicon MOSFETs 83
Microelectronic Engineering Special Issue devoted to the 2001 Insulating Films on Semiconductors Conference, INFOS 2001 82
Optimization Guidelines for Epitaxial Collectors of Advanced BJT’s with Improved Breakdown Voltage and Speed 78
Investigation of Hot Electron Luminescence in Silicon by means of Dual Gate MOS Structures 75
Totale 7.702
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Categoria #
all - tutte 26.900
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 26.900
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/2022396 0 0 30 26 7 18 45 14 6 75 102 73
2022/2023479 62 50 16 62 56 124 0 25 64 2 7 11
2023/2024204 21 11 1 2 9 114 0 2 15 5 4 20
2024/20251.043 15 60 75 16 14 32 50 51 103 134 156 337
2025/20261.699 77 170 229 231 256 130 163 62 82 145 113 41
2026/2027249 99 96 54 0 0 0 0 0 0 0 0 0
Totale 7.702