IRIS
SANGIORGI, Enrico
 Distribuzione geografica
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Continente #
NA - Nord America 3.689
EU - Europa 826
AS - Asia 185
Continente sconosciuto - Info sul continente non disponibili 3
AF - Africa 1
SA - Sud America 1
Totale 4.705
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Nazione #
US - Stati Uniti d'America 3.672
UA - Ucraina 332
DE - Germania 211
FI - Finlandia 115
CN - Cina 106
SE - Svezia 54
IE - Irlanda 49
TR - Turchia 48
IT - Italia 25
CA - Canada 17
RU - Federazione Russa 16
SG - Singapore 16
GB - Regno Unito 13
IN - India 7
FR - Francia 5
TW - Taiwan 4
EU - Europa 3
BE - Belgio 2
CZ - Repubblica Ceca 2
IR - Iran 2
AT - Austria 1
CL - Cile 1
JP - Giappone 1
KR - Corea 1
NL - Olanda 1
TG - Togo 1
Totale 4.705
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Città #
Woodbridge 597
Ann Arbor 493
Fairfield 405
Houston 254
Jacksonville 251
Chandler 243
Ashburn 188
Wilmington 176
Cambridge 171
Seattle 166
Dearborn 122
New York 106
Beijing 57
Princeton 56
Dublin 49
Izmir 48
Grafing 25
San Diego 21
San Mateo 21
Ottawa 17
Singapore 16
Des Moines 13
Norwalk 13
Boardman 12
Ogden 10
Udine 9
Kunming 6
Hefei 5
Nanjing 5
Hangzhou 4
Shanghai 4
Helsinki 3
New Taipei 3
Palaiseau 3
Rome 3
Simi Valley 3
Augusta 2
Baotou 2
Bologna 2
Brno 2
Brussels 2
Hebei 2
Leawood 2
Nanchang 2
Shenyang 2
Torre Del Greco 2
Amsterdam 1
Andover 1
Ardabil 1
Auburn Hills 1
Changsha 1
Chengdu 1
Collarmele 1
Fuzhou 1
Guangzhou 1
Harbin 1
Jinan 1
Lomé 1
London 1
Milan 1
Modena 1
Monmouth Junction 1
Mumbai 1
Nanning 1
New Delhi 1
Paris 1
Phoenix 1
Redwood City 1
Saint Petersburg 1
Taipei 1
Taizhou 1
Tokyo 1
Wandsworth 1
Wuhan 1
Xian 1
Totale 3.627
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Nome #
An Experimental Study of Low Field Electron Mobility in Double-Gate, Ultra-Thin SOI MOSFETs 150
Cathode Hot Electrons and Anode Hot Holes in Tunneling MOS Capacitors 149
Layout dependence of CMOS Latch-up 143
A Study of Injection Conditions in the Substrate Hot Electron Induced Degradation of n-MOSFETs 140
Effects of the interaction of neighboring structures on the Latch-up behavior of C-MOS ICs 129
Monitoring Hot Carrier Degradation in SOI MOSFETs by Hot Carrier Luminescence Techniques 128
Hysteresis cycle in the Latch-up characteristic of wide CMOS structures 120
Effects of the interaction of neighboring structures on the Latch-up behavior of C-MOS ICs 119
An Improved Test Structure to Characterize Ultra- Low Hot Carrier Injection in Homogeneous Conditions 116
A novel method to determine the Source and Drain resistances of individual MOSFETs 115
A Comparative Study of Hot-Carrier Induced Light Emission and Degradation in Bulk and SOI MOSFETs 113
Analysis of Uniform Degradation in n-MOSFETs 110
Evidence of Substrate Enhanced High Energy Tails in the Distribution Function of Deep Submicron MOSFETs by Light Emission Measurements 105
Parameter extraction from I-V characteristics of single MOSFETs 104
Latch-up in CMOS circuits: a review 104
Non-Local Effects in p-MOSFET Substrate Hot Hole Injection Experiments 102
Bias and Temperature Dependence of Homogeneous Hot-Electron Injection from Silicon into Silicon Dioxide at Low Voltages 102
A combined transport-injection model for hot-electron and hot-hole injection in the gate oxide of MOS structures 101
Energy Dependent Electron and Hole Impact Ionization in Si Bipolar Transistors 100
Monte-Carlo simulation of MOSFETs with band offsets in the source and drain 99
Photon Emission from sub-micron p-channel MOSFETs Biased at High Fields 97
Impact Ionization and Photon Emission in MOS Capacitors and FETs 96
Injection Efficiency of CHISEL Gate Currents in Short MOS Devices: Physical Mechanisms, Device Implications and Sensitivity to Technological Parameters", 91
Oxide Field Dependence of Electron Injection From Silicon into Silicon Dioxide 90
A Comparative Analysis of Substrate Current Generation Mechanisms in Tunneling MOS Capacitors 84
Physically Based modeling of Low Field Electron Mobility in Ultrathin Single- and Double-Gate SOI n-MOSFETs 83
Two dimensional quantum simulation of silicon MOSFETs 82
Device simulation for decananometer MOSFETs 82
Electron Injection in the Gate Oxide of MOS Structures at Liquid Nitrogen Temperature: Measurement and Simulation 81
Non Local Electron and Hole Impact Ionization in Advanced Si BJTs 80
Bias and Temperature Dependence of Gate and Substrate Currents in n-MOSFETs at Low Drain Voltage 78
Analysis of highly non-uniform collector doping profiles for the optimization of the breakdown / speed trade off in advanced BJTs 78
Study of low field electron transport in ultra-thin single and double gate SOI MOSFETs 77
Monte Carlo Simulation of Low Voltage Hot Carrier Effects in Non Volatile Memory Cells 75
Two-dimensional quantum mechanical simulation of charge distribution in silicon MOSFETs 75
Substrate Enhanced Gate Currents in CMOS Devices 74
Experimental Analysis of Polarization in the Hot-Carrier Luminescence of Silicon Devices 71
Measurements of Low Field Mobility in Ultra Thin SOI n- and p-MOSFETs 71
A better insight in the performance of silicon bjt's featuring highly non-uniform collector doping profiles 70
Three dimensional distribution of Latchup current in scaled CMOS structures 69
Hot-Electron induced Photon Energies in n-channel MOSFET’s operating at 77 and 300 K 67
Characterization and Modeling of Hot-Carrier Luminescence in Silicon n+/n/n+ Devices 65
A Test Chip and an Accurate Measurement System to Characterize Hot Hole Injection in the Gate Oxide of p-MOSFET’s 57
Low Field Mobility of Ultra Thin SOI n- and p-MOSFETs: Measurement and Implications on the Performance of Ultra Short MOSFETs 56
Advanced Physically Based Device Modeling for Gate Current and Hot Carrier Phenomena in Scaled MOSFETs 54
Measurement of the Hot Hole Injection Probability from Si Into SiO2 in p-MOSFET’s 52
Microelectronic Engineering Special Issue devoted to the 2001 Insulating Films on Semiconductors Conference, INFOS 2001 52
Coupled Monte Carlo Simulation of Si and SiO2 Transport in MOS Capacitors 51
Modeling of Mobility in Ultra-Thin SOI MOSFETs: Physical Understanding and Analytical Models for Device Simulators 50
Investigation of Hot Electron Luminescence in Silicon by means of Dual Gate MOS Structures 46
Quantitative Assesment of mobility degradation by Remote Coulomb Scattering in Ultra-thin oxide MOSFETs: measurement and simulations 42
Short channel and hot carrier performance of ULSI MOSFETs with halo structures 41
Two-dimensional quantum mechanical aspects in the charge distribution of ULSI silicon MOSFETs 36
Optimization Guidelines for Epitaxial Collectors of Advanced BJT’s with Improved Breakdown Voltage and Speed 33
On the Optimization of HALOs for 0.1 micron MOSFETs and Below 30
Monte Carlo simulation of program and erase charge distribution in NROM devices 27
Totale 4.712
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Categoria #
all - tutte 13.584
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 13.584
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/20201.207 66 51 41 190 93 201 117 151 83 111 20 83
2020/2021696 19 70 10 80 41 114 32 72 119 26 89 24
2021/2022455 16 43 30 26 7 18 45 14 6 75 102 73
2022/2023479 62 50 16 62 56 124 0 25 64 2 7 11
2023/2024204 21 11 1 2 9 114 0 2 15 5 4 20
2024/20251 1 0 0 0 0 0 0 0 0 0 0 0
Totale 4.712