IRIS
SANGIORGI, Enrico
 Distribuzione geografica
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Continente #
NA - Nord America 3.780
EU - Europa 829
AS - Asia 269
Continente sconosciuto - Info sul continente non disponibili 3
AF - Africa 1
SA - Sud America 1
Totale 4.883
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Nazione #
US - Stati Uniti d'America 3.763
UA - Ucraina 333
DE - Germania 211
FI - Finlandia 115
CN - Cina 107
SG - Singapore 99
SE - Svezia 54
IE - Irlanda 49
TR - Turchia 48
IT - Italia 26
CA - Canada 17
RU - Federazione Russa 16
GB - Regno Unito 13
IN - India 7
FR - Francia 5
TW - Taiwan 4
EU - Europa 3
BE - Belgio 2
CZ - Repubblica Ceca 2
IR - Iran 2
NL - Olanda 2
AT - Austria 1
CL - Cile 1
JP - Giappone 1
KR - Corea 1
TG - Togo 1
Totale 4.883
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Città #
Woodbridge 597
Ann Arbor 493
Fairfield 405
Houston 254
Jacksonville 251
Chandler 243
Ashburn 188
Wilmington 176
Cambridge 171
Seattle 166
Dearborn 122
New York 106
Singapore 88
Boardman 68
Beijing 57
Princeton 56
Dublin 49
Izmir 48
Grafing 25
San Diego 21
San Mateo 21
Ottawa 17
Des Moines 13
Norwalk 13
Ogden 10
Udine 9
Kunming 6
Hefei 5
Nanjing 5
Santa Clara 5
Hangzhou 4
Shanghai 4
Helsinki 3
New Taipei 3
Palaiseau 3
Rome 3
Simi Valley 3
Amsterdam 2
Augusta 2
Baotou 2
Bologna 2
Brno 2
Brussels 2
Hebei 2
Leawood 2
Nanchang 2
Shenyang 2
Torre Del Greco 2
Andover 1
Ardabil 1
Auburn Hills 1
Changsha 1
Chengdu 1
Collarmele 1
Dallas 1
Fuzhou 1
Guangzhou 1
Harbin 1
Jinan 1
Lomé 1
London 1
Los Angeles 1
Milan 1
Modena 1
Monmouth Junction 1
Mumbai 1
Nanning 1
New Delhi 1
Paris 1
Phoenix 1
Redwood City 1
Saint Petersburg 1
Taipei 1
Taizhou 1
Tokyo 1
Wandsworth 1
Wuhan 1
Xian 1
Totale 3.763
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Nome #
An Experimental Study of Low Field Electron Mobility in Double-Gate, Ultra-Thin SOI MOSFETs 153
Cathode Hot Electrons and Anode Hot Holes in Tunneling MOS Capacitors 152
Layout dependence of CMOS Latch-up 146
A Study of Injection Conditions in the Substrate Hot Electron Induced Degradation of n-MOSFETs 142
Monitoring Hot Carrier Degradation in SOI MOSFETs by Hot Carrier Luminescence Techniques 131
Effects of the interaction of neighboring structures on the Latch-up behavior of C-MOS ICs 131
Hysteresis cycle in the Latch-up characteristic of wide CMOS structures 123
Effects of the interaction of neighboring structures on the Latch-up behavior of C-MOS ICs 121
An Improved Test Structure to Characterize Ultra- Low Hot Carrier Injection in Homogeneous Conditions 119
A novel method to determine the Source and Drain resistances of individual MOSFETs 118
A Comparative Study of Hot-Carrier Induced Light Emission and Degradation in Bulk and SOI MOSFETs 117
Analysis of Uniform Degradation in n-MOSFETs 112
A combined transport-injection model for hot-electron and hot-hole injection in the gate oxide of MOS structures 110
Evidence of Substrate Enhanced High Energy Tails in the Distribution Function of Deep Submicron MOSFETs by Light Emission Measurements 108
Parameter extraction from I-V characteristics of single MOSFETs 106
Latch-up in CMOS circuits: a review 106
Non-Local Effects in p-MOSFET Substrate Hot Hole Injection Experiments 104
Bias and Temperature Dependence of Homogeneous Hot-Electron Injection from Silicon into Silicon Dioxide at Low Voltages 104
Energy Dependent Electron and Hole Impact Ionization in Si Bipolar Transistors 103
Monte-Carlo simulation of MOSFETs with band offsets in the source and drain 101
Photon Emission from sub-micron p-channel MOSFETs Biased at High Fields 99
Impact Ionization and Photon Emission in MOS Capacitors and FETs 99
Injection Efficiency of CHISEL Gate Currents in Short MOS Devices: Physical Mechanisms, Device Implications and Sensitivity to Technological Parameters", 94
Oxide Field Dependence of Electron Injection From Silicon into Silicon Dioxide 93
Two dimensional quantum simulation of silicon MOSFETs 91
A Comparative Analysis of Substrate Current Generation Mechanisms in Tunneling MOS Capacitors 88
Physically Based modeling of Low Field Electron Mobility in Ultrathin Single- and Double-Gate SOI n-MOSFETs 87
Device simulation for decananometer MOSFETs 85
Bias and Temperature Dependence of Gate and Substrate Currents in n-MOSFETs at Low Drain Voltage 85
Electron Injection in the Gate Oxide of MOS Structures at Liquid Nitrogen Temperature: Measurement and Simulation 83
Non Local Electron and Hole Impact Ionization in Advanced Si BJTs 82
Study of low field electron transport in ultra-thin single and double gate SOI MOSFETs 80
Analysis of highly non-uniform collector doping profiles for the optimization of the breakdown / speed trade off in advanced BJTs 80
Substrate Enhanced Gate Currents in CMOS Devices 78
Monte Carlo Simulation of Low Voltage Hot Carrier Effects in Non Volatile Memory Cells 78
Two-dimensional quantum mechanical simulation of charge distribution in silicon MOSFETs 77
Measurements of Low Field Mobility in Ultra Thin SOI n- and p-MOSFETs 74
A better insight in the performance of silicon bjt's featuring highly non-uniform collector doping profiles 74
Experimental Analysis of Polarization in the Hot-Carrier Luminescence of Silicon Devices 73
Three dimensional distribution of Latchup current in scaled CMOS structures 73
Hot-Electron induced Photon Energies in n-channel MOSFET’s operating at 77 and 300 K 72
Characterization and Modeling of Hot-Carrier Luminescence in Silicon n+/n/n+ Devices 67
A Test Chip and an Accurate Measurement System to Characterize Hot Hole Injection in the Gate Oxide of p-MOSFET’s 60
Low Field Mobility of Ultra Thin SOI n- and p-MOSFETs: Measurement and Implications on the Performance of Ultra Short MOSFETs 59
Advanced Physically Based Device Modeling for Gate Current and Hot Carrier Phenomena in Scaled MOSFETs 58
Coupled Monte Carlo Simulation of Si and SiO2 Transport in MOS Capacitors 57
Measurement of the Hot Hole Injection Probability from Si Into SiO2 in p-MOSFET’s 54
Microelectronic Engineering Special Issue devoted to the 2001 Insulating Films on Semiconductors Conference, INFOS 2001 54
Modeling of Mobility in Ultra-Thin SOI MOSFETs: Physical Understanding and Analytical Models for Device Simulators 53
Investigation of Hot Electron Luminescence in Silicon by means of Dual Gate MOS Structures 49
Quantitative Assesment of mobility degradation by Remote Coulomb Scattering in Ultra-thin oxide MOSFETs: measurement and simulations 45
Short channel and hot carrier performance of ULSI MOSFETs with halo structures 44
Two-dimensional quantum mechanical aspects in the charge distribution of ULSI silicon MOSFETs 39
Optimization Guidelines for Epitaxial Collectors of Advanced BJT’s with Improved Breakdown Voltage and Speed 36
On the Optimization of HALOs for 0.1 micron MOSFETs and Below 33
Monte Carlo simulation of program and erase charge distribution in NROM devices 30
Totale 4.890
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Categoria #
all - tutte 15.595
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 15.595
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/2020859 0 0 0 0 93 201 117 151 83 111 20 83
2020/2021696 19 70 10 80 41 114 32 72 119 26 89 24
2021/2022455 16 43 30 26 7 18 45 14 6 75 102 73
2022/2023479 62 50 16 62 56 124 0 25 64 2 7 11
2023/2024204 21 11 1 2 9 114 0 2 15 5 4 20
2024/2025179 15 60 75 16 13 0 0 0 0 0 0 0
Totale 4.890