BORGHELLO, GIULIO
 Distribuzione geografica
Continente #
NA - Nord America 968
EU - Europa 307
AS - Asia 134
Continente sconosciuto - Info sul continente non disponibili 1
SA - Sud America 1
Totale 1.411
Nazione #
US - Stati Uniti d'America 968
DE - Germania 114
IT - Italia 62
CN - Cina 52
SG - Singapore 48
UA - Ucraina 33
CH - Svizzera 22
TR - Turchia 18
IE - Irlanda 17
FR - Francia 12
VN - Vietnam 10
RU - Federazione Russa 9
AT - Austria 7
BE - Belgio 7
SE - Svezia 6
FI - Finlandia 5
GB - Regno Unito 5
NL - Olanda 4
TW - Taiwan 4
IN - India 2
CO - Colombia 1
CZ - Repubblica Ceca 1
DK - Danimarca 1
EU - Europa 1
GR - Grecia 1
NO - Norvegia 1
Totale 1.411
Città #
Fairfield 169
Woodbridge 93
Ashburn 74
Seattle 74
Houston 73
Cambridge 67
Wilmington 60
Ann Arbor 44
Singapore 42
Dearborn 39
Chandler 35
Jacksonville 28
Udine 27
Boardman 20
Izmir 18
Dublin 17
Princeton 17
Nürnberg 15
Beijing 9
Dong Ket 8
Hefei 8
Leawood 8
Brussels 7
Geneva 7
Norwalk 7
Zurich 7
Des Moines 6
Graz 6
Pordenone 6
Redmond 6
San Diego 6
Kunming 5
Nanchang 5
Padova 5
Amsterdam 4
Cagliari 4
Milan 4
Nanjing 4
Ogden 4
Baotou 3
Helsinki 3
Hsinchu 3
Nuremberg 3
Phoenix 3
Chengdu 2
Cividale Del Friuli 2
Dallas 2
Ho Chi Minh City 2
Huzhou 2
Imola 2
Jinan 2
Kolkata 2
Shenyang 2
Soest 2
Sovicille 2
Vernier 2
Bogotá 1
Ceyrat 1
Crotone 1
Dortmund 1
Essen 1
Falls Church 1
Fremont 1
Hangzhou 1
Jiaxing 1
Los Angeles 1
Meyrin 1
Modena 1
Ningbo 1
Olomouc 1
Pasadena 1
Pisa 1
Quzhou 1
Shanghai 1
Torre Del Greco 1
Trento 1
Verona 1
Wuhan 1
Yinchuan 1
Totale 1.100
Nome #
Modeling of High Total Ionizing Dose (TID) Effects for Enclosed Layout Transistors in 65 nm Bulk CMOS 176
Impact of GigaRad Ionizing Dose on 28 nm Bulk MOSFETs for Future HL-LHC 132
Extending a 65nm CMOS process design kit for high total ionizing dose effects 104
Mobility Degradation of 28-nm Bulk MOSFETs Irradiated to Ultrahigh Total Ionizing Doses 103
Dose-Rate Sensitivity of 65-nm MOSFETs Exposed to Ultrahigh Doses 100
Ionizing radiation effects in nanoscale CMOS technologies exposed to ultra-high doses 97
Investigation of Scaling and Temperature Effects in Total Ionizing Dose (TID) Experiments in 65 nm CMOS 87
FCC Physics Opportunities: Future Circular Collider Conceptual Design Report Volume 1 82
Total ionizing dose effects on analog performance of 65 nm bulk CMOS with enclosed-gate and standard layout 78
FCC-hh: The Hadron Collider: Future Circular Collider Conceptual Design Report Volume 3 76
Total ionizing dose effects on analog performance of 28 nm bulk MOSFETs 74
FCC-ee: The Lepton Collider: Future Circular Collider Conceptual Design Report Volume 2 64
Forward and Reverse Operation of Enclosed-Gate MOSFETs and Sensitivity to High Total Ionizing Dose 62
Charge Buildup and Spatial Distribution of Interface Traps in 65-nm pMOSFETs Irradiated to Ultrahigh Doses 61
HE-LHC: The High-Energy Large Hadron Collider: Future Circular Collider Conceptual Design Report Volume 4 61
Spatial distribution of interface traps in 65 nm pMOSFETs irradiated to ultra-high doses 57
Characterization and Modeling of GigaRad-TID-Induced Drain Leakage Current in a 28 nm Bulk CMOS Technology 50
GigaRad Total Ionizing Dose and Post-Irradiation Effects on 28 nm Bulk MOSFETs 14
Totale 1.478
Categoria #
all - tutte 5.113
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 5.113


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/2020220 0 0 0 0 0 0 78 48 53 18 9 14
2020/2021256 7 20 8 44 23 25 24 25 22 21 19 18
2021/2022138 13 11 6 15 2 13 7 6 2 25 20 18
2022/2023137 20 1 0 22 8 44 1 8 18 2 6 7
2023/202494 12 9 1 2 41 2 2 8 7 7 3 0
2024/2025105 11 24 32 4 4 30 0 0 0 0 0 0
Totale 1.478