IRIS
BORGHELLO, GIULIO
 Distribuzione geografica
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Continente #
NA - Nord America 949
EU - Europa 274
AS - Asia 83
Continente sconosciuto - Info sul continente non disponibili 1
SA - Sud America 1
Totale 1.308
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Nazione #
US - Stati Uniti d'America 949
DE - Germania 110
IT - Italia 60
CN - Cina 51
UA - Ucraina 33
TR - Turchia 18
IE - Irlanda 17
CH - Svizzera 15
VN - Vietnam 10
FR - Francia 9
BE - Belgio 7
SE - Svezia 6
GB - Regno Unito 5
FI - Finlandia 4
AT - Austria 3
IN - India 2
TW - Taiwan 2
CO - Colombia 1
CZ - Repubblica Ceca 1
DK - Danimarca 1
EU - Europa 1
GR - Grecia 1
NO - Norvegia 1
RU - Federazione Russa 1
Totale 1.308
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Città #
Fairfield 169
Woodbridge 93
Ashburn 74
Seattle 74
Houston 73
Cambridge 67
Wilmington 60
Ann Arbor 44
Dearborn 39
Chandler 35
Jacksonville 28
Udine 27
Izmir 18
Dublin 17
Princeton 17
Nürnberg 15
Beijing 9
Dong Ket 8
Hefei 8
Leawood 8
Brussels 7
Geneva 7
Norwalk 7
Des Moines 6
Pordenone 6
Redmond 6
Kunming 5
Nanchang 5
San Diego 5
Cagliari 4
Milan 4
Nanjing 4
Ogden 4
Baotou 3
Boardman 3
Graz 3
Helsinki 3
Padova 3
Phoenix 3
Zurich 3
Chengdu 2
Cividale Del Friuli 2
Ho Chi Minh City 2
Hsinchu 2
Huzhou 2
Imola 2
Jinan 2
Kolkata 2
Shenyang 2
Soest 2
Sovicille 2
Bogotá 1
Ceyrat 1
Crotone 1
Dallas 1
Essen 1
Falls Church 1
Fremont 1
Hangzhou 1
Jiaxing 1
Los Angeles 1
Modena 1
Ningbo 1
Olomouc 1
Pasadena 1
Pisa 1
Quzhou 1
Shanghai 1
Torre Del Greco 1
Trento 1
Verona 1
Wuhan 1
Yinchuan 1
Totale 1.018
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Nome #
Modeling of High Total Ionizing Dose (TID) Effects for Enclosed Layout Transistors in 65 nm Bulk CMOS 170
Impact of GigaRad Ionizing Dose on 28 nm Bulk MOSFETs for Future HL-LHC 127
Extending a 65nm CMOS process design kit for high total ionizing dose effects 100
Mobility Degradation of 28-nm Bulk MOSFETs Irradiated to Ultrahigh Total Ionizing Doses 99
Dose-Rate Sensitivity of 65-nm MOSFETs Exposed to Ultrahigh Doses 96
Investigation of Scaling and Temperature Effects in Total Ionizing Dose (TID) Experiments in 65 nm CMOS 83
FCC Physics Opportunities: Future Circular Collider Conceptual Design Report Volume 1 76
Total ionizing dose effects on analog performance of 65 nm bulk CMOS with enclosed-gate and standard layout 74
Ionizing radiation effects in nanoscale CMOS technologies exposed to ultra-high doses 73
Total ionizing dose effects on analog performance of 28 nm bulk MOSFETs 70
FCC-hh: The Hadron Collider: Future Circular Collider Conceptual Design Report Volume 3 69
Forward and Reverse Operation of Enclosed-Gate MOSFETs and Sensitivity to High Total Ionizing Dose 58
FCC-ee: The Lepton Collider: Future Circular Collider Conceptual Design Report Volume 2 57
Charge Buildup and Spatial Distribution of Interface Traps in 65-nm pMOSFETs Irradiated to Ultrahigh Doses 56
HE-LHC: The High-Energy Large Hadron Collider: Future Circular Collider Conceptual Design Report Volume 4 56
Spatial distribution of interface traps in 65 nm pMOSFETs irradiated to ultra-high doses 52
Characterization and Modeling of GigaRad-TID-Induced Drain Leakage Current in a 28 nm Bulk CMOS Technology 45
GigaRad Total Ionizing Dose and Post-Irradiation Effects on 28 nm Bulk MOSFETs 14
Totale 1.375
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Categoria #
all - tutte 4.323
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 4.323
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/2020530 31 30 35 78 49 87 78 48 53 18 9 14
2020/2021256 7 20 8 44 23 25 24 25 22 21 19 18
2021/2022138 13 11 6 15 2 13 7 6 2 25 20 18
2022/2023137 20 1 0 22 8 44 1 8 18 2 6 7
2023/202494 12 9 1 2 41 2 2 8 7 7 3 0
2024/20252 2 0 0 0 0 0 0 0 0 0 0 0
Totale 1.375