FONTANINI, RICCARDO
 Distribuzione geografica
Continente #
NA - Nord America 86
EU - Europa 34
AS - Asia 4
Totale 124
Nazione #
US - Stati Uniti d'America 83
IT - Italia 21
IE - Irlanda 8
CN - Cina 4
BE - Belgio 3
CA - Canada 3
SE - Svezia 2
Totale 124
Città #
Chandler 20
Udine 11
Ann Arbor 9
Princeton 6
Wilmington 6
Brussels 3
Toronto 3
Andover 2
Guangzhou 2
Norwalk 2
Redmond 2
Woodbridge 2
Jiaxing 1
Nanjing 1
Rome 1
Seattle 1
Trieste 1
Totale 73
Nome #
Ferroelectric based FETs and synaptic devices for highly energy efficient computational technologies 38
Intrinsic Nature of Negative Capacitance in Multidomain Hf0.5Zr0.5O2-Based Ferroelectric/Dielectric Heterostructures 26
Polarization switching and interface charges in BEOL compatible Ferroelectric Tunnel Junctions 22
Modelling and design of FTJs as high reading-impedance synaptic devices 21
Modelling and design of FTJs as multi-level low energy memristors for neuromorphic computing 20
Macroscopic and microscopic picture of negative capacitance operation in ferroelectric capacitors 13
Limitations to Electrical Probing of Spontaneous Polarization in Ferroelectric-Dielectric Heterostructures 3
Interplay between charge trapping and polarization switching in BEOL-compatible bilayer Ferroelectric Tunnel Junctions 3
Charge-Trapping-Induced Compensation of the Ferroelectric Polarization in FTJs: Optimal Conditions for a Synaptic Device Operation 3
Reducing the Spike Rate in Deep Spiking Neural Networks 1
Totale 150
Categoria #
all - tutte 378
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 378


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/20213 0000 00 00 0003
2021/2022114 60839 61 72 591813
2022/202333 91554 00 00 0000
Totale 150