In this letter, we present an intuitive theoretical framework to investigate the influence of interface traps in NC-FETs, operated either as steep-slope or as g m -boosted devices. Our analysis, validated by numerical simulations, shows that the sub-threshold swing can be either improved or degraded by the presence of defects, and that the threshold voltage can be reduced or increased depending on the design of the NC-FET.
Influence of interface traps on ferroelectric NC-FETs
Rollo, Tommaso
;Esseni, David
2018-01-01
Abstract
In this letter, we present an intuitive theoretical framework to investigate the influence of interface traps in NC-FETs, operated either as steep-slope or as g m -boosted devices. Our analysis, validated by numerical simulations, shows that the sub-threshold swing can be either improved or degraded by the presence of defects, and that the threshold voltage can be reduced or increased depending on the design of the NC-FET.File in questo prodotto:
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