We present analytical models and numerical simulations addressing the fundamental limits to the sub-threshold swing (SS) in Dirac-Source FETs (DS-FETs), based on either graphene or 3D Dirac semimetals. To this purpose, we devised and implemented a semi-analytical model for DS-FETs employing a 3D Dirac source. Numerical results confirm analytical predictions. Our findings help to clarify the physics behind the minimum SS in DS-FETs, and the possible advantages offered by 3D Dirac semimetals.
Minimum Subthreshold Swing in DS-FETs Based on Graphene and 3D Dirac Metals
Baccichetti, Erica;Marcon, Riccardo;Esseni, David
2025-01-01
Abstract
We present analytical models and numerical simulations addressing the fundamental limits to the sub-threshold swing (SS) in Dirac-Source FETs (DS-FETs), based on either graphene or 3D Dirac semimetals. To this purpose, we devised and implemented a semi-analytical model for DS-FETs employing a 3D Dirac source. Numerical results confirm analytical predictions. Our findings help to clarify the physics behind the minimum SS in DS-FETs, and the possible advantages offered by 3D Dirac semimetals.File in questo prodotto:
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