In this work, the hot electron injection models presently available for technology support have been investigated within the context of the development of advanced embedded non-volatile memories. The distribution functions obtained by these models (namely the Fiegna Model – FM [1], the Lucky Electron Model – LEM [2] and the recently implemented Spherical Harmonics Expansion of the Boltzman’s Transport Equation – SHE [3]), have been systematically compared to rigorous Monte Carlo (MC) results [4], both in homogeneous and device conditions. Gate-to-drain current ratio and gate current density simulation has also been benchmarked in device simulations. Results indicate that local models such as FM, can partially capture the channel hot electron injection, at the price of model parameter adjustments. Moreover, at least in the device and field condition considered in this work, an overall better agreement with MC simulations has been obtained using the 1st order SHE, even without any particular fitting procedure. Extending the results presented in [3] by exploring shorter gate lengths and addressing the floating gate voltage dependence of the gate current, this work shows that the SHE method could contribute to bridge the gap between the rigorous but time consuming MC method and less rigorous but suitable TCAD local models.
On the accuracy of current TCAD hot carrier injection models in nanoscale devices
IELLINA, Matteo;PALESTRI, Pierpaolo;
2010-01-01
Abstract
In this work, the hot electron injection models presently available for technology support have been investigated within the context of the development of advanced embedded non-volatile memories. The distribution functions obtained by these models (namely the Fiegna Model – FM [1], the Lucky Electron Model – LEM [2] and the recently implemented Spherical Harmonics Expansion of the Boltzman’s Transport Equation – SHE [3]), have been systematically compared to rigorous Monte Carlo (MC) results [4], both in homogeneous and device conditions. Gate-to-drain current ratio and gate current density simulation has also been benchmarked in device simulations. Results indicate that local models such as FM, can partially capture the channel hot electron injection, at the price of model parameter adjustments. Moreover, at least in the device and field condition considered in this work, an overall better agreement with MC simulations has been obtained using the 1st order SHE, even without any particular fitting procedure. Extending the results presented in [3] by exploring shorter gate lengths and addressing the floating gate voltage dependence of the gate current, this work shows that the SHE method could contribute to bridge the gap between the rigorous but time consuming MC method and less rigorous but suitable TCAD local models.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
