We assess the analog/RF intrinsic performance of graphene FETs (GFETs) through a semiclassical transport model, including local and remote phonon scattering as well as band-to-band tunneling generation and recombination, validated by comparison with full quantum results over a wide range of bias voltages. We found that scaling is expected to improve the fT , and that scattering plays a role in reducing both the fT and the transconductance also in sub-100-nm GFETs. Moreover, we observed a strong degradation of the device performance due to the series resistances and source/drain to channel underlaps.

Simulation of the Performance of Graphene FETs With a Semiclassical Model, Including Band-to-Band Tunneling

PALESTRI, Pierpaolo;ESSENI, David;SELMI, Luca
2014-01-01

Abstract

We assess the analog/RF intrinsic performance of graphene FETs (GFETs) through a semiclassical transport model, including local and remote phonon scattering as well as band-to-band tunneling generation and recombination, validated by comparison with full quantum results over a wide range of bias voltages. We found that scaling is expected to improve the fT , and that scattering plays a role in reducing both the fT and the transconductance also in sub-100-nm GFETs. Moreover, we observed a strong degradation of the device performance due to the series resistances and source/drain to channel underlaps.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11390/961745
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