Sfoglia per Autore
Bias and Temperature Dependence of Gate and Substrate Currents in n-MOSFETs at Low Drain Voltage
1994-01-01 Esseni, David; Selmi, Luca; R., Bez; Sangiorgi, Enrico; B., Ricco
Soft Programming in Scaled Flash EEPROM Cells
1995-01-01 Esseni, David; Selmi, Luca; Bez, R; L. RAVAZZI, L; Sangiorgi, E.
"A Novel Method to Characterize Parasitic Capacitances in MOSFET's"
1995-01-01 B., Ricco'; Esseni, David
Temperature Dependence of Gate and Substrate Currents in the CHE Crossover Regime
1995-01-01 Esseni, David; Selmi, Luca; Sangiorgi, E; Bez, R; Ricco, B.
"Characterization of Polysilicon-Gate Depletion in MOS Structures"
1996-01-01 B., Riccò; R., Versari; Esseni, David
"Non-scaling of MOSFETs Linear Resistance in the Deep Sub-micron Regime"
1998-01-01 Esseni, David; H., Iway; M. SAITO AND B., Ricco
The Impact of Device Design on the Substrate Enhanced Gate Current of VLSI MOSFET's
1998-01-01 Esseni, David; Selmi, Luca; Bez, R.
A New and Flexible Scheme for Hot-Electron Programming of Flash Memory Cells
1998-01-01 Esseni, David; B., Ricco
Experimental Signature and Physical Mechanisms of Substrate Enhanced Gate Current in MOS Devices
1998-01-01 Esseni, David; Selmi, Luca
"Hot-Carrier-Induced Alterations of MOSFET Capacitances: A Quantitative Monitor for Electrical Degradation"
1998-01-01 Esseni, David; A., Pieracci; M. QUADRELLI AND B., Ricco
"A Better Understanding of Substrate Enhanced Gate Current in VLSI MOSFET's and Flash Cells - Part I: Phenomenological Aspects"
1999-01-01 Esseni, David; Selmi, Luca
A New and Flexible Scheme for Hot-Electron Programming of Non-Volatile Memory Cells
1999-01-01 Esseni, David; A., DELLA STRADA; P. CAPPELLETTI AND B., Ricco
The scaling properties of CHISEL and CHE injection efficiency in MOSFETs and FLASH memory cells
1999-01-01 Esseni, David; Selmi, Luca; Ghetti, A; Sangiorgi, E.
Trade-Off Between Programming Speed and Current Absorption in Flash EEPROM Memories
1999-01-01 Esseni, David; Giannasi, F.; Ricco, B.; Villa, D.
"A Better Understanding of Substrate Enhanced Gate Current in VLSI MOSFET's and Flash Cells - Part II: Physical Analysis
1999-01-01 Selmi, Luca; Esseni, David
European Patent application no.00830546.8, filing date july 31 2000
2000-01-01 Esseni, David; Selmi, Luca; Bez, R.; Modelli, A.
Substrate Enhanced Gate Currents in CMOS Devices
2000-01-01 Driussi, Francesco; Esseni, David; Selmi, Luca; F., Piazza; Sangiorgi, Enrico
Trading-Off Programming Speed and Current Absorption in Flash Memories with the Ramped-Gate Programming Technique
2000-01-01 Esseni, David; C., Villa; S. TASSAN AND B., Ricco
Low Field Mobility of Ultra Thin SOI n- and p-MOSFETs: Measurement and Implications on the Performance of Ultra Short MOSFETs
2000-01-01 Esseni, David; M., Mastrapasqua; G. K., Celler; F. H., Baumann; C., Fiegna; Selmi, Luca; Sangiorgi, Enrico
On the origin of the dispersion of erased threshold voltages in flash eeprom memory cells
2000-01-01 Esseni, David; Ricco, B.
Injection Efficiency of CHISEL Gate Currents in Short MOS Devices: Physical Mechanisms, Device Implications and Sensitivity to Technological Parameters",
2000-01-01 Esseni, David; Selmi, Luca; A., Ghetti; Sangiorgi, Enrico
Deuterium Effect on Interface States and SILC Generation in the CHE Stress Conditions: A Comparative Study
2000-01-01 Esseni, David; Bude, J.; Selmi, Luca
Observation of a new hole gate current component in p+-poly gate p-channel mosfet's
2000-01-01 Driussi, Francesco; Esseni, David; Selmi, Luca; Piazza, F.
Hot carrier degradation and damage profiling of cmos devices with biased substrates
2000-01-01 Driussi, Francesco; Esseni, David; Piazza, F.; Selmi, Luca
Substrate enhanced degradation of cmos devices
2000-01-01 Driussi, Francesco; Esseni, David; Selmi, Luca; F., Piazza
An Experimental Study of Low Field Electron Mobility in Double-Gate, Ultra-Thin SOI MOSFETs
2001-01-01 Esseni, David; M., Mastrapasqua; C., Fiegna; G. K., Celler; Selmi, Luca; Sangiorgi, Enrico
Controlled Hot-Electrons Writing Method for Non-Volatile Memory Cells
2001-01-01 Esseni, David; P., Cappelletti; B., Ricco
Mobility in Single and Double Gate Ultra-Thin SOI MOSFETs
2001-01-01 Esseni, David; M., Mastrapasqua; C., Fiegna; G. K., Celler; Selmi, Luca; E., Sangiorgi
Bandwidth Optimizatoin of Flash Memories with the RGP Technique
2001-01-01 R., Versari; Esseni, David; G., Falavigna; M., Lanzoni; B., Ricco
Experimental Study of Low Voltage Anode Hole Injection in Thin Oxides
2001-01-01 Esseni, David; Bude, J; Selmi, Luca
Low Field Electron and Hole Mobility of SOI Transistors Fabricated on Ultra-Thin Silicon Films for Deep Sub-Micron Technology Application
2001-01-01 Esseni, David; Mastrapasqua, M.; Celler, G.; Fiegna, C.; Selmi, Luca
BipFLASH: a Novel Non-Volatile Memory Cell Concept for High Speed - Low Power Applications
2001-01-01 Esseni, David; Selmi, Luca
Measurements of Low Field Mobility in Ultra Thin SOI n- and p-MOSFETs
2001-01-01 Mastrapasqua, M; Esseni, David; Celler, G. K.; Fiegna, C; Selmi, Luca; Sangiorgi, Enrico
Optimized Programming of Multilevel Flash EEPROMs
2001-01-01 R., Versari; Esseni, David; G., Falavigna; M., Lanzoni; B., Ricco
Microscopic Analysis of the Impact of Substrate Bias on the Gate Current of pMOSFETs
2001-01-01 Zanchetta, Sergio; Esseni, David; Palestri, Pierpaolo; Selmi, Luca
Hot Hole Gate Current in Surface Channel p-MOSFETs
2001-01-01 Driussi, Francesco; Esseni, David; Selmi, Luca; Piazza, F.
Ultra Thin SOI Transistors for Ultimate CMOS Technology: Fundamental Properties and Application Perspectives
2002-01-01 Esseni, David; Mastrapasqua, M; Fiegna, C; Celler, G; Selmi, Luca; Sangiorgi, E.
An Improved Model for Electron Mobility Degradation by Remote Coulomb Scattering in Ultra-Thin Oxide MOSFETs
2002-01-01 Esseni, David; Abramo, Antonio
Bipolar Flash Memory (BipFlash) - A new Architecture for a Non-Volatile Memory with a High Programming Efficiency
2002-01-01 Esseni, David; Selmi, Luca; R., Bez; A., Modelli
Study of low field electron transport in ultra-thin single and double gate SOI MOSFETs
2002-01-01 Esseni, David; Abramo, Antonio; Selmi, Luca; Sangiorgi, Enrico
Damage generation and location in n- and p-MOSFETs biased in the substrate-enhanced gate current regime
2002-01-01 Driussi, Francesco; Esseni, David; Selmi, Luca; Fausto, Piazza
On Interface and Oxide Degradation in VLSI MOSFETs, Part II: Fowler-Nordheim Stress Regime
2002-01-01 Esseni, David; Bude, J.; Selmi, Luca
Ultra Thin Single and Double-Gate MOSFETs for Future ULSI Applications: Measurements, Simulations and Open Issues
2002-01-01 Esseni, David; Fiegna, C.; Mastrapasqua, M.
On Interface and Oxide Degradation in VLSI MOSFETs - Part I: Deuterium Effect in CHE Stress Regime
2002-01-01 Esseni, David; J. D., Bude; Selmi, Luca
Spectroscopic Analysis of Trap Assisted Tunneling on This Oxides by Means of Substrate Hot Electron Injection Experiments
2002-01-01 Driussi, Francesco; Iob, R.; Esseni, David; Selmi, Luca; VAN SCHAIJK, R.; Widdershoven, F.
A New High Injection Efficiency Non Volatile Memory Cell: BipFlash
2002-01-01 Esseni, David; Selmi, Luca; Roberto, Bez; Alberto, Modelli
Quantitative Assesment of mobility degradation by Remote Coulomb Scattering in Ultra-thin oxide MOSFETs: measurement and simulations
2003-01-01 Lucci, Luca; Esseni, David; J., Loo; Y., Ponomarev; Selmi, Luca; Abramo, Antonio; Sangiorgi, Enrico
An Experimental Study of Mobility Enhacement in Ultra-Thin SOI Transistors Operated in Double-Gate Mode
2003-01-01 Esseni, David; M., Mastrapasqua; G. K., Celler; C., Fiegna; Selmi, Luca; E., Sangiorgi
A new Statistical Model to extract the Stress Induced Oxide Trap number and the Probability Density Distribution of the Gate Current Produced by a Single Trap
2003-01-01 Driussi, Francesco; Widdershoven, F.; Esseni, David; VAN DUUREN, M. J.
A Methodology to Extract the Channel Current of Permeable Gate Oxide MOSFETs
2003-01-01 Palestri, Pierpaolo; Esseni, David; Selmi, Luca; Guegan, G.; Sangiorgi, E.
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