Sfoglia per Autore
Towards the thermodynamics of localization processes
2000-01-01 Grigolini, P; Pala, M; Palatella, L; Roncaglia, R
Quantum measurement and entropy production
2001-01-01 Grigolini, P; Pala, M; Palatella, L
Extraction of parameters of surface states from experimental test structures
2002-01-01 Pala, M; Iannaccone, G; Kaiser, S; Schliemann, A; Worschech, L; Forchel, A
A three-dimensional solver of the Schrodinger equation in momentum space for the detailed simulation of nanostructures
2002-01-01 Pala, M; Iannaccone, G
Modeling Decoherence Effects on the Transport Properties of Mesoscopic Devices
2003-01-01 Pala, M; Iannaccone, G
Decoherence, wave function collapses and non-ordinary statistical mechanics
2003-01-01 Bologna, M; Grigolini, P; Pala, M; Palatella, L
Two-dimensional hole precession in an all-semiconductor spin field effect transistor (art. no. 045304)
2004-01-01 Pala, M; Governale, M; Konig, J; Zulicke, U; Iannaccone, G
Statistical model of dephasing in mesoscopic devices introduced in the scattering matrix formalism (art. no. 235304)
2004-01-01 Pala, M; Iannaccone, G
Modeling the effects of dephasing on mesoscopic noise
2004-01-01 Pala, M; Iannaccone, G; Et, Al.
Effect of dephasing on the current statistics of mesoscopic devices
2004-01-01 Pala, M; Iannaccone, G
Three-dimensional simulation of single electron transistors
2004-01-01 Fiori, G; Pala, M; Iannaccone, G; Et, Al.
Universal Rashba spin precession of two-dimensional electrons and holes
2004-01-01 Pala, M; Governale, M; Konig, J; Zulicke, U
Rashba spin precession in quantum-Hall edge channels
2005-01-01 Pala, M; Governale, M; Zulicke, U; Iannaccone, G
Three-dimensional simulation of realistic single electron transistors
2005-01-01 Fiori, G; Pala, M; Iannaccone, G
Numerical simulation of ballistic magnetoconductance and magnetic focusing in strained Si-SiGe cavities
2005-01-01 Pala, M; Iannaccone, G; Curatola, G
Suppression of weak antilocalization in GaxIn1-xAs/InP narrow quantum wires
2006-01-01 Schapers, T; Guzenko, Va; Pala, M; Zulicke, U; Governale, M; Knobbe, J; Hardtdegen, H
Modeling of non-equilibrium transport effects in Fully-Depleted GeOI-MOSFETs
2006-01-01 Pala, M; Le Royer, C; Le Carval, G; Clavelier, L
Imaging electron wave functions inside open quantum rings
2007-01-01 Martins, F; Hackens, B; Pala, M; Ouisse, T; Sellier, H; Wallart, X; Bollaert, S; Cappy, A; Chevrier, J; Bayot, V; Huant, S
Nonequilibrium Josephson and Andreev current through interacting quantum dots
2007-01-01 Pala, M; Governale, M; Konig, J
Size Dependence of Surface-Roughness-Limited Mobility in Silicon-Nanowire FETs
2008-01-01 Poli, S; Pala, M; Poiroux, T; Deleonibus, S; Baccarani, G
Size dependence of surface-roughness-limited mobility in Silicon Nanowire FETs
2008-01-01 Poli, S; Pala, M; Poiroux, T; Et, Al.
Real-time diagrammatic approach to transport through interacting quantum dots with normal and superconducting leads
2008-01-01 Governale, M; Pala, M; Konig, J
Local density of states in mesoscopic samples from scanning gate microscopy
2008-01-01 Pala, M; Hackens, B; Martins, F; Sellier, H; Bayot, V; Huant, S; Ouisse, T
Full-three dimensional quantum approach to evaluate the surface-roughness-limited magnetoresistance mobility in SNWT
2008-01-01 Buran, C; Pala, M; Bescond, M; Mouis, M
Phonon- and surface-roughness-limited mobility of gate-all-around 3C-SiC and Si nanowire FETs
2009-01-01 Rogdakis, K; Poli, S; Bano, E; Zekentes, K; Pala, M
3D real-space quantum transport simulation of nanowire MOS transistors: Influence of the ionized doping impurity
2009-01-01 Bescond, M; Lannoo, M; Michelini, F; Raymond, L; Pala, M
Nonlocal Andreev transport through an interacting quantum dot
2009-01-01 Futterer, D; Governale, M; Pala, M; Konig, J
Full quantum treatment of surface roughness effects in Silicon nanowire and double gate FETs
2009-01-01 Pala, M; Buran, C; Poli, S; Mouis, M
Full-3D real-space treatment of surface roughness in double gate MOSFETs
2009-01-01 Buran, C; Pala, M; Poli, S; Et, Al.
Backscattering coefficient in gate-all-around 3C-SiC nanowire FETs
2009-01-01 Rogdakis, K; Bano, E; Pala, M; Et, Al.
Full-3D real-space simulation of surface-roughness effects in double-gate MOSFETs
2009-01-01 Buran, C; Pala, M; Mouis, M; Et, Al.
Scanning gate microscopy of quantum rings: effects of an external magnetic field and of charged defects
2009-01-01 Pala, M; Baltazar, S; Martins, F; Hackens, B; Sellier, H; Ouisse, T; Bayot, V; Huant, S
Channel-Length Dependence of Low-Field Mobility in Silicon-Nanowire FETs
2009-01-01 Poli, S; Pala, M
Three-Dimensional Real-Space Simulation of Surface Roughness in Silicon Nanowire FETs
2009-01-01 Buran, C; Pala, M; Bescond, M; Dubois, M; Mouis, M
Full Quantum Treatment of Remote Coulomb Scattering in Silicon Nanowire FETs
2009-01-01 Poli, S; Pala, M; Poiroux, T
Spin-orbit coupling and phase coherence in InAs nanowires
2010-01-01 Hernandez, Se; Akabori, M; Sladek, K; Volk, C; Alagha, S; Hardtdegen, H; Pala, M; Demarina, N; Gruetzmacher, D; Schaepers, T
Imaging Coulomb islands in a quantum Hall interferometer
2010-01-01 Hackens, B; Martins, F; Faniel, S; Dutu, Ca; Sellier, H; Huant, S; Pala, M; Desplanque, L; Wallart, X; Bayot, V
Superconducting proximity effect in interacting double-dot systems
2010-01-01 Eldridge, J; Pala, M; Governale, M; Konig, J
On the imaging of electron transport in semiconductor quantum structures by scanning-gate microscopy: successes and limitations
2011-01-01 Sellier, H; Hackens, B; Pala, M; Martins, F; Baltazar, S; Wallart, X; Desplanque, L; Bayot, V; Huant, S
A simulation study of strain induced performance enhancements in InAs nanowire Tunnel-FETs
2011-01-01 Conzatti, Francesco; Pala, M. G.; Esseni, David; Bano, E.; Selmi, Luca
Quantum Simulation of Silicon-Nanowire FETs
2011-01-01 Pala, M
A Comparative Study of Surface-Roughness-Induced Variability in Silicon Nanowire and Double-Gate FETs
2011-01-01 Cresti, A; Pala, M; Poli, S; Mouis, M; Ghibaudo, G
Superconducting proximity effect in interacting quantum dots revealed by shot noise
2011-01-01 Braggio, A; Governale, M; Pala, M; Konig, J
Investigation of localized versus uniform strain as a performance booster in InAs Tunnel-FETs
2012-01-01 Conzatti, Francesco; Pala, M. G.; Esseni, David; Bano, E.
Impact of interface traps on the IV curves of InAs Tunnel-FETs and MOSFETs: A full quantum study
2012-01-01 Pala, M. G.; Esseni, D.; Conzatti, F.
A new transport phenomenon in nanostructures: a mesoscopic analog of the Braess paradox encountered in road networks
2012-01-01 Pala, M; Sellier, H; Hackens, B; Martins, F; Bayot, V; Huant, S
Transport Inefficiency in Branched-Out Mesoscopic Networks: An Analog of the Braess Paradox
2012-01-01 Pala, M; Baltazar, S; Liu, P; Sellier, H; Hackens, B; Martins, F; Bayot, V; Wallart, X; Desplanque, L; Huant, S
Strain-Induced Performance Improvements in InAs Nanowire Tunnel FETs
2012-01-01 Conzatti, Francesco; Pala, M; Esseni, David; Bano, E; Selmi, Luca
Deterministic Method to Evaluate the Threshold Voltage Variability Induced by Discrete Trap Charges in Si-Nanowire FETs
2012-01-01 Bekaddour, A; Pala, M; Chabane-Sari, Ne; Ghibaudo, G
Theoretical Study of Thermoelectric Properties of SiC Nanowires
2012-01-01 Choi, Jh; Pala, M; Latu-Romain, L; Bano, E
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