PILOTTO, ALESSANDRO
 Distribuzione geografica
Continente #
NA - Nord America 916
EU - Europa 220
AS - Asia 80
AF - Africa 1
Continente sconosciuto - Info sul continente non disponibili 1
SA - Sud America 1
Totale 1.219
Nazione #
US - Stati Uniti d'America 914
IT - Italia 101
CN - Cina 47
UA - Ucraina 34
DE - Germania 24
IE - Irlanda 18
TR - Turchia 18
SE - Svezia 12
GB - Regno Unito 9
FR - Francia 5
IN - India 5
RO - Romania 5
VN - Vietnam 5
BE - Belgio 4
FI - Finlandia 3
HK - Hong Kong 3
CA - Canada 2
ES - Italia 2
JP - Giappone 2
RU - Federazione Russa 2
BR - Brasile 1
CZ - Repubblica Ceca 1
EU - Europa 1
TG - Togo 1
Totale 1.219
Città #
Fairfield 150
Chandler 122
Woodbridge 90
Seattle 66
Ashburn 64
Wilmington 60
Houston 53
Cambridge 44
Udine 40
Ann Arbor 31
Beijing 25
Izmir 17
Princeton 17
Jacksonville 15
Dublin 14
San Diego 10
Dearborn 7
Des Moines 5
Dong Ket 5
Horia 5
Ogden 5
Brussels 4
Cagliari 4
Hefei 4
Redmond 4
Rome 4
Zanica 4
Boardman 3
Castronno 3
Helsinki 3
San Mateo 3
Trieste 3
Verona 3
Andover 2
Bologna 2
Manresa 2
Martignacco 2
Milan 2
Modena 2
Nanjing 2
New York 2
Orsay 2
Redwood City 2
Rivignano 2
Tokyo 2
Auburn Hills 1
Brno 1
Chengdu 1
Como 1
Gemona 1
Guangzhou 1
Haltom City 1
Indiana 1
Jaboatao dos Guararapes 1
Jinan 1
Kocaeli 1
Leawood 1
Leesburg 1
Lomé 1
London 1
Montréal 1
Morsang-sur-Orge 1
Munich 1
Norwalk 1
Oakland 1
Reggio Nell'emilia 1
Scafati 1
Sgonico 1
Shanghai 1
Shaoxing 1
Toronto 1
Trento 1
Treviso 1
Villa Bartolomea 1
Wuhan 1
Totale 941
Nome #
Modeling charge collection in x-ray imagers 170
A New Expression for the Gain-Noise Relation of Single-Carrier Avalanche Photodiodes With Arbitrary Staircase Multiplication Regions 146
An Improved Nonlocal History-Dependent Model for Gain and Noise in Avalanche Photodiodes Based on Energy Balance Equation 142
Influence of δ p-doping on the behaviour of GaAs/AlGaAs SAM-APDs for synchrotron radiation 129
Gain and noise in GaAs/AlGaAs avalanche photodiodes with thin multiplication regions 121
Investigation of the behaviour of GaAs/AlGaAs SAM-APDs for synchrotron radiation 100
An Improved Random Path Length Algorithm for p-i-n and Staircase Avalanche Photodiodes 93
Optimization of GaAs/AlGaAs staircase avalanche photodiodes accounting for both electron and hole impact ionization 76
Optimizing the Number of Steps and the Noise in Staircase APDs with Ternary III - V Semiconductor Alloys 69
Effects of p doping on GaAs/AlGaAs SAM-APDs for X-rays detection 66
Modeling and Optimization of Single Photon Avalanche Photodiodes for X-Ray Detection 62
A model for the jitter of avalanche photodiodes with separate absorption and multiplication regions 43
Experimental and simulation analysis of carrier lifetimes in GaAs/AlGaAs Avalanche Photo-Diodes 35
Modeling Low and High Field Uniform Transport in Monolayer MoS2 31
Full-Band Monte Carlo simulations of GaAs p-i-n Avalanche PhotoDiodes: What Are the Limits of Nonlocal Impact Ionization Models? 29
Semi-classical transport in MoS2 and MoS2 transistors by a Monte Carlo approach 26
Synchrotron Radiation Study of Gain, Noise, and Collection Efficiency of GaAs SAM-APDs with Staircase Structure 18
Experimental Characterization of Separate Absorption–Multiplication GaAs Staircase Avalanche Photodiodes under Continuous Laser Light Reveals Periodic Oscillations at High Gains 4
Full-Band Quantum Simulations of Semiconductor Devices based on Empirical Pseudopotential Hamiltonians in the presence of Phonon Scattering and Non-Radiative Recombination 2
Totale 1.362
Categoria #
all - tutte 4.201
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 4.201


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2018/201971 0 0 0 0 0 0 0 0 0 0 45 26
2019/2020325 17 7 10 33 15 24 33 55 59 41 15 16
2020/2021320 17 19 25 51 30 63 7 31 24 21 8 24
2021/2022184 9 14 11 18 1 4 9 6 1 30 54 27
2022/2023247 23 38 1 41 19 51 2 15 32 11 4 10
2023/202478 20 8 7 0 20 5 3 5 6 4 0 0
Totale 1.362