IRIS
CONZATTI, Francesco
 Distribuzione geografica
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Continente #
NA - Nord America 1.282
EU - Europa 282
AS - Asia 81
Totale 1.645
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Nazione #
US - Stati Uniti d'America 1.276
IT - Italia 101
UA - Ucraina 88
CN - Cina 37
DE - Germania 36
FI - Finlandia 28
SG - Singapore 17
IE - Irlanda 15
TR - Turchia 11
SE - Svezia 6
CA - Canada 5
IN - India 5
HK - Hong Kong 4
GB - Regno Unito 3
JP - Giappone 3
BE - Belgio 2
KR - Corea 2
VN - Vietnam 2
AT - Austria 1
BG - Bulgaria 1
MD - Moldavia 1
MX - Messico 1
Totale 1.645
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Città #
Woodbridge 198
Fairfield 188
Ann Arbor 150
Houston 103
Ashburn 92
Chandler 74
Seattle 73
Cambridge 61
Wilmington 60
Jacksonville 57
Dearborn 41
Udine 40
Beijing 16
Singapore 16
Dublin 15
Princeton 14
Izmir 11
San Diego 9
New York 8
Trieste 5
Cagliari 4
Kunming 4
Nanjing 4
Ottawa 4
Bhopal 3
Des Moines 3
Hefei 3
Hong Kong 3
Norwalk 3
Ogden 3
Osaka 3
Brussels 2
Dallas 2
Dong Ket 2
Grafing 2
Indiana 2
Los Angeles 2
Nanchang 2
Boardman 1
Central District 1
Chongqing 1
Codroipo 1
Edinburgh 1
Jinan 1
Lafayette 1
Langfang 1
Miami 1
Montreal 1
Munich 1
Oderzo 1
Padova 1
Phoenix 1
Rome 1
San Francisco 1
Simi Valley 1
Suzhou 1
Vienna 1
Zhengzhou 1
Totale 1.302
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Nome #
Drain Current Improvements in Uniaxially Strained p-MOSFETs: a Multi-Subband Monte Carlo Study 140
Pseudo-spectral methods for the efficient simulation of quantization effects in nanoscale MOS transistors 130
A Multi-Subband Monte Carlo study of electron transport in strained SiGe n-type FinFETs 125
Modeling of Field-Effect-Transistors with Strained and Alternative Channel Materials 119
On the role of Coulomb scattering in hafnium-silicate gated silicon n and p-channel metal-oxide-semiconductor-field-effect-transistors 116
Surface-Roughness-Induced Variability in Nanowire InAs Tunnel FETs 113
Strain-Induced Performance Improvements in InAs Nanowire Tunnel FETs 113
Drain current improvements in uniaxially strained p-MOSFETs: A Multi-Subband Monte Carlo study 108
Investigation of localized versus uniform strain as a performance booster in InAs Tunnel-FETs 105
On the Surface-Roughness Scattering in Biaxially Strained n- and p-MOS Transistors 101
Numerical simulation of advanced CMOS and beyond CMOS devices 100
A simulation study of strain induced performance enhancements in InAs nanowire Tunnel-FETs 98
Investigation of Strain Engineering in FinFETs Comprising Experimental Analysis and Numerical Simulations 95
Simulation study of the on-current improvements in Ge and sGe versus Si and sSi nano-MOSFETs 80
null 76
Impact of Interface Traps on the IV Curves of InAs Tunnel-FETs and MOSFETs: A Full Quantum Study 19
Impact of interface traps on the IV curves of InAs Tunnel-FETs and MOSFETs: A full quantum study 8
Investigation of localized versus uniform strain as a performance booster in InAs Tunnel-FETs 6
Totale 1.652
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Categoria #
all - tutte 4.507
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 4.507
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/2020471 27 17 16 80 41 69 57 51 42 32 11 28
2020/2021237 6 29 3 35 14 33 24 22 25 11 24 11
2021/2022144 9 8 3 3 0 13 8 6 1 27 47 19
2022/2023149 17 27 5 18 8 32 0 6 15 2 8 11
2023/202476 15 6 0 0 6 9 5 9 6 4 0 16
2024/20251 1 0 0 0 0 0 0 0 0 0 0 0
Totale 1.652