IRIS
CONZATTI, Francesco
 Distribuzione geografica
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Continente #
NA - Nord America 1.282
EU - Europa 281
AS - Asia 65
Totale 1.628
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Nazione #
US - Stati Uniti d'America 1.276
IT - Italia 101
UA - Ucraina 88
CN - Cina 37
DE - Germania 35
FI - Finlandia 28
IE - Irlanda 15
TR - Turchia 11
SE - Svezia 6
CA - Canada 5
IN - India 5
HK - Hong Kong 4
GB - Regno Unito 3
JP - Giappone 3
BE - Belgio 2
KR - Corea 2
VN - Vietnam 2
AT - Austria 1
BG - Bulgaria 1
MD - Moldavia 1
MX - Messico 1
SG - Singapore 1
Totale 1.628
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Città #
Woodbridge 198
Fairfield 188
Ann Arbor 150
Houston 103
Ashburn 92
Chandler 74
Seattle 73
Cambridge 61
Wilmington 60
Jacksonville 57
Dearborn 41
Udine 40
Beijing 16
Dublin 15
Princeton 14
Izmir 11
San Diego 9
New York 8
Trieste 5
Cagliari 4
Kunming 4
Nanjing 4
Ottawa 4
Bhopal 3
Des Moines 3
Hefei 3
Hong Kong 3
Norwalk 3
Ogden 3
Osaka 3
Brussels 2
Dallas 2
Dong Ket 2
Grafing 2
Indiana 2
Los Angeles 2
Nanchang 2
Boardman 1
Central District 1
Chongqing 1
Codroipo 1
Edinburgh 1
Jinan 1
Lafayette 1
Langfang 1
Miami 1
Montreal 1
Oderzo 1
Padova 1
Phoenix 1
Rome 1
San Francisco 1
Simi Valley 1
Suzhou 1
Vienna 1
Zhengzhou 1
Totale 1.285
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Nome #
Drain Current Improvements in Uniaxially Strained p-MOSFETs: a Multi-Subband Monte Carlo Study 139
Pseudo-spectral methods for the efficient simulation of quantization effects in nanoscale MOS transistors 128
A Multi-Subband Monte Carlo study of electron transport in strained SiGe n-type FinFETs 125
Modeling of Field-Effect-Transistors with Strained and Alternative Channel Materials 118
On the role of Coulomb scattering in hafnium-silicate gated silicon n and p-channel metal-oxide-semiconductor-field-effect-transistors 115
Surface-Roughness-Induced Variability in Nanowire InAs Tunnel FETs 112
Strain-Induced Performance Improvements in InAs Nanowire Tunnel FETs 112
Drain current improvements in uniaxially strained p-MOSFETs: A Multi-Subband Monte Carlo study 107
Investigation of localized versus uniform strain as a performance booster in InAs Tunnel-FETs 104
On the Surface-Roughness Scattering in Biaxially Strained n- and p-MOS Transistors 100
Numerical simulation of advanced CMOS and beyond CMOS devices 99
A simulation study of strain induced performance enhancements in InAs nanowire Tunnel-FETs 97
Investigation of Strain Engineering in FinFETs Comprising Experimental Analysis and Numerical Simulations 94
Simulation study of the on-current improvements in Ge and sGe versus Si and sSi nano-MOSFETs 79
null 76
Impact of Interface Traps on the IV Curves of InAs Tunnel-FETs and MOSFETs: A Full Quantum Study 18
Impact of interface traps on the IV curves of InAs Tunnel-FETs and MOSFETs: A full quantum study 7
Investigation of localized versus uniform strain as a performance booster in InAs Tunnel-FETs 5
Totale 1.635
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Categoria #
all - tutte 4.131
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 4.131
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2018/2019131 0 0 0 0 0 0 0 0 0 0 78 53
2019/2020471 27 17 16 80 41 69 57 51 42 32 11 28
2020/2021237 6 29 3 35 14 33 24 22 25 11 24 11
2021/2022144 9 8 3 3 0 13 8 6 1 27 47 19
2022/2023149 17 27 5 18 8 32 0 6 15 2 8 11
2023/202460 15 6 0 0 6 9 5 9 6 4 0 0
Totale 1.635