statistiche ricercatore

Nazione	#
US - Stati Uniti d'America	947
SG - Singapore	204
CN - Cina	63
UA - Ucraina	61
BR - Brasile	56
DE - Germania	41
HK - Hong Kong	39
RU - Federazione Russa	32
IT - Italia	30
VN - Vietnam	27
FI - Finlandia	20
GB - Regno Unito	15
SE - Svezia	15
FR - Francia	13
IE - Irlanda	10
TR - Turchia	10
BD - Bangladesh	8
CA - Canada	8
IN - India	8
AR - Argentina	7
BE - Belgio	7
ZA - Sudafrica	6
CO - Colombia	5
IQ - Iraq	4
MX - Messico	4
PL - Polonia	4
AT - Austria	3
ES - Italia	3
PE - Perù	3
AU - Australia	2
CL - Cile	2
DZ - Algeria	2
JP - Giappone	2
KR - Corea	2
LT - Lituania	2
MA - Marocco	2
NL - Olanda	2
PK - Pakistan	2
PS - Palestinian Territory	2
UZ - Uzbekistan	2
AL - Albania	1
AM - Armenia	1
AZ - Azerbaigian	1
BO - Bolivia	1
BY - Bielorussia	1
CZ - Repubblica Ceca	1
DO - Repubblica Dominicana	1
EC - Ecuador	1
ET - Etiopia	1
GA - Gabon	1
HT - Haiti	1
ID - Indonesia	1
KG - Kirghizistan	1
LA - Repubblica Popolare Democratica del Laos	1
NZ - Nuova Zelanda	1
OM - Oman	1
SV - El Salvador	1
TH - Thailandia	1
TN - Tunisia	1
TW - Taiwan	1
VE - Venezuela	1
Totale	1.696

Nome	#
Failure of the Scalar Dielectric Function Approach for the Screening Modeling in Double-Gate SOI MOSFETs and in FinFETs	195
An improved procedure to extract the limiting carrier velocity in ultra scaled CMOS devices	180
On the origin of the mobility reduction in n- and p-metal-oxide-semiconductor field effect transistors with hafnium-based/metal gate stacks	180
A comparison of advanced transport models for the computation of the drain current in nanoscale nMOSFETs	174
On the role of Coulomb scattering in hafnium-silicate gated silicon n and p-channel metal-oxide-semiconductor-field-effect-transistors	171
Comparison of Semiclassical Transport Formulations Including Quantum Corrections for Advanced Devices with High-K Gate Stacks	169
Drain Current Computation in Nanoscale nMOSFETs: Comparison of Transport Models	156
Simulation study of the on-current improvements in Ge and sGe versus Si and sSi nano-MOSFETs	149
Impact of the technology boosters on the MOSFET performance	145
Understanding the mobility reduction in MOSFETs featuring high-κ dielectrics	108
Compact expression to model the effects of dielectric absorption on analog-to-digital converters	74
Totale	1.701

	Totale	Lug	Ago	Sett	Ott	Nov	Dic	Gen	Feb	Mar	Apr	Mag	Giu
2020/2021	25	0	0	0	0	0	0	0	0	0	0	16	9
2021/2022	113	6	7	5	5	1	6	10	3	0	16	40	14
2022/2023	141	13	21	1	20	16	33	0	12	17	0	5	3
2023/2024	42	7	2	0	2	3	3	0	5	1	1	3	15
2024/2025	246	4	14	16	7	11	9	26	12	30	15	27	75
2025/2026	462	36	59	41	54	106	36	46	7	28	42	7	0
Totale													1.701