TONIUTTI, Paolo
 Distribuzione geografica
Continente #
NA - Nord America 826
EU - Europa 206
AS - Asia 111
SA - Sud America 14
AF - Africa 1
Totale 1.158
Nazione #
US - Stati Uniti d'America 819
SG - Singapore 66
UA - Ucraina 56
DE - Germania 32
IT - Italia 29
RU - Federazione Russa 29
CN - Cina 25
FI - Finlandia 18
SE - Svezia 12
BR - Brasile 11
IE - Irlanda 10
TR - Turchia 9
BE - Belgio 7
GB - Regno Unito 7
CA - Canada 6
PE - Perù 3
IN - India 2
KR - Corea 2
VN - Vietnam 2
AL - Albania 1
AM - Armenia 1
AT - Austria 1
AZ - Azerbaigian 1
BD - Bangladesh 1
CZ - Repubblica Ceca 1
ES - Italia 1
FR - Francia 1
KG - Kirghizistan 1
MX - Messico 1
NL - Olanda 1
TH - Thailandia 1
ZA - Sudafrica 1
Totale 1.158
Città #
Fairfield 113
Woodbridge 104
Ann Arbor 87
Chandler 77
Houston 55
Ashburn 46
Singapore 43
Wilmington 40
Seattle 37
Cambridge 34
Jacksonville 33
Beijing 16
Boardman 16
Dearborn 15
Udine 11
Dublin 10
Princeton 10
Izmir 8
Brussels 7
Ottawa 6
Parma 5
Cagliari 4
Des Moines 4
Düsseldorf 4
Grafing 4
San Diego 4
Los Angeles 3
New York 3
Norwalk 3
Dong Ket 2
Lima 2
Milan 2
Santa Clara 2
Simi Valley 2
Araguari 1
Araçatuba 1
Baku 1
Baotou 1
Bishkek 1
Brno 1
Brooklyn 1
Chennai 1
Codroipo 1
Dhaka 1
Fuzhou 1
Genoa 1
Graz 1
Guangzhou 1
Hebei 1
Hefei 1
Horizonte 1
Indiana 1
Istanbul 1
Kunming 1
Lajeado 1
Lima region 1
London 1
Mesa 1
Montes Claros 1
Moscow 1
Munich 1
Nanjing 1
Nazaré da Mata 1
Nova Hartz 1
Ogden 1
Portsmouth 1
Presidente Prudente 1
San Francisco 1
Santaluz 1
Seoul 1
Surubim 1
Teresina 1
Tirana 1
Yerevan 1
Zhengzhou 1
Ürümqi 1
Totale 854
Nome #
Failure of the Scalar Dielectric Function Approach for the Screening Modeling in Double-Gate SOI MOSFETs and in FinFETs 154
On the origin of the mobility reduction in n- and p-metal-oxide-semiconductor field effect transistors with hafnium-based/metal gate stacks 140
On the role of Coulomb scattering in hafnium-silicate gated silicon n and p-channel metal-oxide-semiconductor-field-effect-transistors 130
An improved procedure to extract the limiting carrier velocity in ultra scaled CMOS devices 126
A comparison of advanced transport models for the computation of the drain current in nanoscale nMOSFETs 125
Comparison of Semiclassical Transport Formulations Including Quantum Corrections for Advanced Devices with High-K Gate Stacks 110
Drain Current Computation in Nanoscale nMOSFETs: Comparison of Transport Models 102
Simulation study of the on-current improvements in Ge and sGe versus Si and sSi nano-MOSFETs 94
Impact of the technology boosters on the MOSFET performance 88
Understanding the mobility reduction in MOSFETs featuring high-κ dielectrics 67
Compact expression to model the effects of dielectric absorption on analog-to-digital converters 27
Totale 1.163
Categoria #
all - tutte 4.071
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 4.071


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/202026 0 0 0 0 0 0 0 0 0 0 3 23
2020/2021181 5 23 10 27 8 22 27 12 16 6 16 9
2021/2022113 6 7 5 5 1 6 10 3 0 16 40 14
2022/2023141 13 21 1 20 16 33 0 12 17 0 5 3
2023/202442 7 2 0 2 3 3 0 5 1 1 3 15
2024/2025170 4 14 16 7 11 9 26 12 30 15 26 0
Totale 1.163