statistiche ricercatore

Continente	#
NA - Nord America	1.015
AS - Asia	382
EU - Europa	274
SA - Sud America	77
AF - Africa	13
Continente sconosciuto - Info sul continente non disponibili	5
OC - Oceania	3
Totale	1.769

Nazione	#
US - Stati Uniti d'America	1.000
SG - Singapore	204
CN - Cina	63
UA - Ucraina	61
BR - Brasile	56
DE - Germania	41
IT - Italia	41
HK - Hong Kong	40
RU - Federazione Russa	33
VN - Vietnam	27
FI - Finlandia	20
GB - Regno Unito	15
SE - Svezia	15
FR - Francia	14
IE - Irlanda	10
TR - Turchia	10
AR - Argentina	8
BD - Bangladesh	8
CA - Canada	8
IN - India	8
BE - Belgio	7
ZA - Sudafrica	6
CO - Colombia	5
IQ - Iraq	4
MX - Messico	4
PL - Polonia	4
AT - Austria	3
ES - Italia	3
PE - Perù	3
AU - Australia	2
CL - Cile	2
DZ - Algeria	2
JP - Giappone	2
KR - Corea	2
LT - Lituania	2
MA - Marocco	2
NL - Olanda	2
PK - Pakistan	2
PS - Palestinian Territory	2
UZ - Uzbekistan	2
AL - Albania	1
AM - Armenia	1
AZ - Azerbaigian	1
BO - Bolivia	1
BY - Bielorussia	1
CZ - Repubblica Ceca	1
DO - Repubblica Dominicana	1
EC - Ecuador	1
ET - Etiopia	1
GA - Gabon	1
HT - Haiti	1
ID - Indonesia	1
KG - Kirghizistan	1
LA - Repubblica Popolare Democratica del Laos	1
NZ - Nuova Zelanda	1
OM - Oman	1
SV - El Salvador	1
TH - Thailandia	1
TN - Tunisia	1
TW - Taiwan	1
VE - Venezuela	1
Totale	1.764

Nome	#
Failure of the Scalar Dielectric Function Approach for the Screening Modeling in Double-Gate SOI MOSFETs and in FinFETs	198
On the origin of the mobility reduction in n- and p-metal-oxide-semiconductor field effect transistors with hafnium-based/metal gate stacks	185
An improved procedure to extract the limiting carrier velocity in ultra scaled CMOS devices	184
Comparison of Semiclassical Transport Formulations Including Quantum Corrections for Advanced Devices with High-K Gate Stacks	183
A comparison of advanced transport models for the computation of the drain current in nanoscale nMOSFETs	180
On the role of Coulomb scattering in hafnium-silicate gated silicon n and p-channel metal-oxide-semiconductor-field-effect-transistors	178
Drain Current Computation in Nanoscale nMOSFETs: Comparison of Transport Models	159
Impact of the technology boosters on the MOSFET performance	156
Simulation study of the on-current improvements in Ge and sGe versus Si and sSi nano-MOSFETs	153
Understanding the mobility reduction in MOSFETs featuring high-κ dielectrics	115
Compact expression to model the effects of dielectric absorption on analog-to-digital converters	78
Totale	1.769

	Totale	Lug	Ago	Sett	Ott	Nov	Dic	Gen	Feb	Mar	Apr	Mag	Giu
2021/2022	107	0	7	5	5	1	6	10	3	0	16	40	14
2022/2023	141	13	21	1	20	16	33	0	12	17	0	5	3
2023/2024	42	7	2	0	2	3	3	0	5	1	1	3	15
2024/2025	246	4	14	16	7	11	9	26	12	30	15	27	75
2025/2026	491	36	59	41	54	106	36	46	7	28	42	29	7
2026/2027	39	11	28	0	0	0	0	0	0	0	0	0	0
Totale													1.769