statistiche ricercatore

Nome	#
Failure of the Scalar Dielectric Function Approach for the Screening Modeling in Double-Gate SOI MOSFETs and in FinFETs	144
On the origin of the mobility reduction in n- and p-metal-oxide-semiconductor field effect transistors with hafnium-based/metal gate stacks	125
On the role of Coulomb scattering in hafnium-silicate gated silicon n and p-channel metal-oxide-semiconductor-field-effect-transistors	116
An improved procedure to extract the limiting carrier velocity in ultra scaled CMOS devices	111
A comparison of advanced transport models for the computation of the drain current in nanoscale nMOSFETs	105
Comparison of Semiclassical Transport Formulations Including Quantum Corrections for Advanced Devices with High-K Gate Stacks	94
Drain Current Computation in Nanoscale nMOSFETs: Comparison of Transport Models	91
Simulation study of the on-current improvements in Ge and sGe versus Si and sSi nano-MOSFETs	80
Impact of the technology boosters on the MOSFET performance	74
Understanding the mobility reduction in MOSFETs featuring high-κ dielectrics	48
Compact expression to model the effects of dielectric absorption on analog-to-digital converters	5
Totale	993

	Totale	Lug	Ago	Sett	Ott	Nov	Dic	Gen	Feb	Mar	Apr	Mag	Giu
2019/2020	270	18	9	10	46	18	35	32	28	27	21	3	23
2020/2021	181	5	23	10	27	8	22	27	12	16	6	16	9
2021/2022	113	6	7	5	5	1	6	10	3	0	16	40	14
2022/2023	141	13	21	1	20	16	33	0	12	17	0	5	3
2023/2024	42	7	2	0	2	3	3	0	5	1	1	3	15
Totale													993