PAUSSA, Alan
 Distribuzione geografica
Continente #
NA - Nord America 899
EU - Europa 271
AS - Asia 78
OC - Oceania 2
Totale 1.250
Nazione #
US - Stati Uniti d'America 888
IT - Italia 104
UA - Ucraina 70
DE - Germania 43
CN - Cina 39
FI - Finlandia 22
TR - Turchia 14
CA - Canada 11
IE - Irlanda 11
SE - Svezia 9
AT - Austria 7
SG - Singapore 7
HK - Hong Kong 6
VN - Vietnam 5
IN - India 3
JP - Giappone 3
AU - Australia 2
CZ - Repubblica Ceca 2
CH - Svizzera 1
GB - Regno Unito 1
RU - Federazione Russa 1
TH - Thailandia 1
Totale 1.250
Città #
Ann Arbor 133
Woodbridge 132
Fairfield 97
Houston 70
Ashburn 51
Chandler 50
Seattle 47
Jacksonville 44
Cambridge 37
Wilmington 34
Dearborn 28
Udine 23
Beijing 14
Izmir 14
Princeton 12
Dublin 11
San Diego 8
Trieste 8
Aachen 7
Ottawa 6
Singapore 6
Dong Ket 5
Kunming 5
Ogden 5
Cagliari 4
Dallas 4
Villach 4
Delhi 3
Grafing 3
Hefei 3
Norwalk 3
Oakville 3
Tokyo 3
Boardman 2
Brno 2
Central 2
Des Moines 2
Gothenburg 2
Graz 2
Indiana 2
Munich 2
Simi Valley 2
Suzhou 2
Wanchai 2
Bari 1
Buttrio 1
Casier 1
Central District 1
Changsha 1
Chengdu 1
Chicago 1
Codroipo 1
Fuzhou 1
Hangzhou 1
Los Angeles 1
Luino 1
Nanchang 1
Nanjing 1
New York 1
Ningbo 1
Rome 1
San Francisco 1
Santa Clara 1
Scorzè 1
Tianjin 1
Ulan-ude 1
Wuhan 1
Wuxi 1
Xian 1
Yurovka 1
Zhengzhou 1
Zurich 1
Totale 927
Nome #
Electromechanical Piezoresistive Sensing in Suspended Graphene Membranes 138
Pseudo-spectral methods for the efficient simulation of quantization effects in nanoscale MOS transistors 130
Numerical Simulation of Advanced CMOS and Beyond CMOS Nanoscale Transistors 126
An exact solution of the linearized Boltzmann transport equation and its application to mobility calculations in graphene bilayers 120
Discrete Geometric Approach for Modelling Quantization Effects in Nanoscale Electron Devices 111
Pseudo-spectral method for the modelling of quantization effects in nanoscale MOS transistors 106
Comparison between Pseudospectral and Discrete Geometric Methods for Modelling Quantization Effects in Nanoscale Electron Devices 103
A manufacturable process integration approach for graphene devices 100
Investigation of Strain Engineering in FinFETs Comprising Experimental Analysis and Numerical Simulations 95
Phonon Limited Uniform Transport in Bilayer Graphene Transistors 85
Low-Field Mobility and High-Field Drift Velocity in Graphene Nanoribbons and Graphene Bilayers 82
Comparison between Pseudospectral and Discrete Geometric Methods for Modelling Quantization Effects in Nanoscale Electron Devices 56
Totale 1.252
Categoria #
all - tutte 3.491
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 3.491


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/2020315 15 10 9 56 26 49 38 35 31 19 6 21
2020/2021157 5 21 4 20 4 19 5 23 17 6 20 13
2021/2022134 5 8 3 8 1 17 9 11 2 18 39 13
2022/2023119 12 6 10 6 18 27 0 12 17 3 2 6
2023/202468 7 7 0 4 16 5 2 15 7 0 0 5
2024/20254 4 0 0 0 0 0 0 0 0 0 0 0
Totale 1.252