statistiche ricercatore

Nazione	#
US - Stati Uniti d'America	615
SG - Singapore	234
VN - Vietnam	75
CN - Cina	71
BR - Brasile	66
IT - Italia	60
HK - Hong Kong	52
AT - Austria	48
RU - Federazione Russa	47
IN - India	40
FR - Francia	22
DE - Germania	19
IE - Irlanda	18
TW - Taiwan	18
GB - Regno Unito	13
CA - Canada	9
JP - Giappone	9
KR - Corea	9
NL - Olanda	8
TR - Turchia	8
ES - Italia	7
ZA - Sudafrica	7
FI - Finlandia	6
PK - Pakistan	6
AR - Argentina	5
BD - Bangladesh	5
IQ - Iraq	5
IR - Iran	5
MX - Messico	5
SE - Svezia	5
EC - Ecuador	4
CH - Svizzera	3
MO - Macao, regione amministrativa speciale della Cina	3
SA - Arabia Saudita	3
UA - Ucraina	3
VE - Venezuela	3
CO - Colombia	2
ET - Etiopia	2
KE - Kenya	2
PL - Polonia	2
AO - Angola	1
BA - Bosnia-Erzegovina	1
BW - Botswana	1
CL - Cile	1
CR - Costa Rica	1
CZ - Repubblica Ceca	1
DZ - Algeria	1
EG - Egitto	1
GR - Grecia	1
HU - Ungheria	1
ID - Indonesia	1
IS - Islanda	1
JM - Giamaica	1
JO - Giordania	1
LT - Lituania	1
MA - Marocco	1
MY - Malesia	1
NP - Nepal	1
PY - Paraguay	1
RO - Romania	1
SK - Slovacchia (Repubblica Slovacca)	1
SN - Senegal	1
TG - Togo	1
TH - Thailandia	1
UZ - Uzbekistan	1
Totale	1.549

Nome	#
Physics based modeling for 2D semiconductors as baseline materials for novel electron devices	257
DFT study of graphene doping due to metal contacts	186
Engineering of metal-MoS2 contacts to overcome Fermi level pinning	132
Simulation study of Fermi level depinning in metal-MoS2 contacts	111
Ohmic Behavior in Metal Contacts to n/p-Type Transition-Metal Dichalcogenides: Schottky versus Tunneling Barrier Trade-off	91
Modeling Low and High Field Uniform Transport in Monolayer MoS2	91
Ab-initio transport simulations unveil the Schottky versus Tunneling barrier trade-off in metal-TMD contacts	89
A study of metal-MoS2 contacts by using an in-house developed ab-initio transport simulator	88
Impact of Different Ratios of Fluorine, Oxygen, and Hydroxyl Surface Terminations on Ti3C2T x MXene as Ammonia Sensor: A First-Principles Study	87
Large temperature coefficient of resistance in atomically thin two-dimensional semiconductors	87
Development of a Fluorinated Graphene-Based Resistive Humidity Sensor	84
Semi-classical transport in MoS2 and MoS2 transistors by a Monte Carlo approach	84
Titanium Carbide MXene as NH3 Sensor: Realistic First-Principles Study	81
Humidity Sensing Properties of Halogenated Graphene: A Comparison of Fluorinated Graphene and Chlorinated Graphene	77
Negative capacitance field-effect transistor based on a two-dimensional ferroelectric	63
Totale	1.608

	Totale	Lug	Ago	Sett	Ott	Nov	Dic	Gen	Feb	Mar	Apr	Mag	Giu
2020/2021	8	0	0	0	0	0	0	0	0	0	1	1	6
2021/2022	99	1	6	0	11	1	0	1	3	0	20	34	22
2022/2023	200	17	27	0	27	15	33	0	8	31	15	8	19
2023/2024	126	14	14	11	5	25	4	2	4	10	12	5	20
2024/2025	381	7	22	50	6	9	27	57	16	37	40	51	59
2025/2026	682	89	67	39	61	153	47	118	30	41	37	0	0
Totale													1.608