statistiche ricercatore

Continente	#
NA - Nord America	736
AS - Asia	570
EU - Europa	279
SA - Sud America	84
Continente sconosciuto - Info sul continente non disponibili	59
AF - Africa	22
Totale	1.750

Nazione	#
US - Stati Uniti d'America	711
SG - Singapore	236
CN - Cina	80
VN - Vietnam	75
IT - Italia	68
BR - Brasile	67
HK - Hong Kong	53
AT - Austria	48
RU - Federazione Russa	47
IN - India	44
FR - Francia	22
TW - Taiwan	20
DE - Germania	19
IE - Irlanda	18
GB - Regno Unito	13
CA - Canada	10
JP - Giappone	9
KR - Corea	9
ES - Italia	8
NL - Olanda	8
TR - Turchia	8
ZA - Sudafrica	7
FI - Finlandia	6
IR - Iran	6
MX - Messico	6
PK - Pakistan	6
AR - Argentina	5
BD - Bangladesh	5
IQ - Iraq	5
MA - Marocco	5
SE - Svezia	5
EC - Ecuador	4
SA - Arabia Saudita	4
CH - Svizzera	3
CO - Colombia	3
JM - Giamaica	3
MO - Macao, regione amministrativa speciale della Cina	3
UA - Ucraina	3
VE - Venezuela	3
ET - Etiopia	2
KE - Kenya	2
PL - Polonia	2
PR - Porto Rico	2
AO - Angola	1
BA - Bosnia-Erzegovina	1
BB - Barbados	1
BW - Botswana	1
CL - Cile	1
CR - Costa Rica	1
CZ - Repubblica Ceca	1
DZ - Algeria	1
EG - Egitto	1
GR - Grecia	1
HN - Honduras	1
HU - Ungheria	1
ID - Indonesia	1
IS - Islanda	1
JO - Giordania	1
KZ - Kazakistan	1
LT - Lituania	1
MY - Malesia	1
NP - Nepal	1
PT - Portogallo	1
PY - Paraguay	1
RO - Romania	1
SK - Slovacchia (Repubblica Slovacca)	1
SN - Senegal	1
TG - Togo	1
TH - Thailandia	1
TT - Trinidad e Tobago	1
UZ - Uzbekistan	1
Totale	1.691

Nome	#
Physics based modeling for 2D semiconductors as baseline materials for novel electron devices	273
DFT study of graphene doping due to metal contacts	195
Engineering of metal-MoS2 contacts to overcome Fermi level pinning	147
Simulation study of Fermi level depinning in metal-MoS2 contacts	120
Ohmic Behavior in Metal Contacts to n/p-Type Transition-Metal Dichalcogenides: Schottky versus Tunneling Barrier Trade-off	113
Titanium Carbide MXene as NH3 Sensor: Realistic First-Principles Study	104
Modeling Low and High Field Uniform Transport in Monolayer MoS2	100
Ab-initio transport simulations unveil the Schottky versus Tunneling barrier trade-off in metal-TMD contacts	96
A study of metal-MoS2 contacts by using an in-house developed ab-initio transport simulator	95
Impact of Different Ratios of Fluorine, Oxygen, and Hydroxyl Surface Terminations on Ti3C2T x MXene as Ammonia Sensor: A First-Principles Study	93
Large temperature coefficient of resistance in atomically thin two-dimensional semiconductors	91
Development of a Fluorinated Graphene-Based Resistive Humidity Sensor	89
Semi-classical transport in MoS2 and MoS2 transistors by a Monte Carlo approach	88
Humidity Sensing Properties of Halogenated Graphene: A Comparison of Fluorinated Graphene and Chlorinated Graphene	81
Negative capacitance field-effect transistor based on a two-dimensional ferroelectric	65
Totale	1.750

	Totale	Lug	Ago	Sett	Ott	Nov	Dic	Gen	Feb	Mar	Apr	Mag	Giu
2021/2022	92	0	0	0	11	1	0	1	3	0	20	34	22
2022/2023	200	17	27	0	27	15	33	0	8	31	15	8	19
2023/2024	126	14	14	11	5	25	4	2	4	10	12	5	20
2024/2025	381	7	22	50	6	9	27	57	16	37	40	51	59
2025/2026	733	89	67	39	61	153	47	118	30	41	45	21	22
2026/2027	91	14	45	32	0	0	0	0	0	0	0	0	0
Totale													1.750