IRIS
ABRAMO, Antonio
 Distribuzione geografica
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Continente #
NA - Nord America 6.098
EU - Europa 1.933
AS - Asia 520
AF - Africa 7
SA - Sud America 4
Continente sconosciuto - Info sul continente non disponibili 3
Totale 8.565
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Nazione #
US - Stati Uniti d'America 6.069
DE - Germania 604
UA - Ucraina 493
SG - Singapore 226
SE - Svezia 215
CN - Cina 201
IT - Italia 194
FI - Finlandia 166
IE - Irlanda 97
RU - Federazione Russa 89
TR - Turchia 82
GB - Regno Unito 39
CA - Canada 27
BE - Belgio 16
CZ - Repubblica Ceca 7
TG - Togo 7
IN - India 6
NL - Olanda 5
CH - Svizzera 4
CL - Cile 4
EU - Europa 3
FR - Francia 3
JP - Giappone 2
TW - Taiwan 2
AT - Austria 1
MX - Messico 1
PA - Panama 1
PK - Pakistan 1
Totale 8.565
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Città #
Woodbridge 830
Fairfield 749
Ann Arbor 637
Houston 564
Chandler 399
Jacksonville 377
Ashburn 313
Seattle 313
Wilmington 305
Cambridge 261
Singapore 195
Dearborn 181
San Mateo 114
Beijing 101
Boardman 101
Dublin 97
Princeton 83
Izmir 69
Udine 67
San Diego 39
New York 34
Des Moines 32
Ottawa 25
Ogden 23
Grafing 13
Kocaeli 13
Brussels 12
Norwalk 12
Milan 11
Los Angeles 10
Guangzhou 8
Hefei 8
Nanjing 8
Lomé 7
Santa Clara 7
Como 6
Kunming 6
Brno 5
Rome 5
Treviso 5
Jinan 4
Shanghai 4
Shenyang 4
Wuhan 4
Xian 4
Codroipo 3
Hangzhou 3
Hebei 3
Munich 3
Ningbo 3
Palmanova 3
Saint Petersburg 3
Andover 2
Baotou 2
Bologna 2
Changsha 2
Changzhou 2
Chengdu 2
Drò 2
Helsinki 2
Lappeenranta 2
Nanchang 2
Nantong 2
Naples 2
Olomouc 2
Palermo 2
Pieris 2
Rende 2
Romans D'isonzo 2
Taipei 2
Trieste 2
Verona 2
Zurich 2
Acireale 1
Amsterdam 1
Auburn Hills 1
Austin 1
Bellevue 1
Casalnuovo di Napoli 1
Chiaravalle 1
Cicciano 1
Cordovado 1
Cuautitlán Izcalli 1
Dallas 1
Fuzhou 1
Genova 1
Groningen 1
Guwahati 1
Jinhua 1
Klagenfurt 1
Lachine 1
Lahore 1
Lausanne 1
London 1
Modena 1
Morristown 1
Motta Di Livenza 1
Nanning 1
Newark 1
Oderzo 1
Totale 6.155
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Nome #
A general purpose 2D Schrödinger solver with open/closed boundary conditions for quantum device analysis 151
The correspondence between deterministic and stochastic digital neurons: analysis and methodology 148
A comparison of numerical solutions of the Boltzmann Transport Equation for high energy electron transport silicon 146
A numerical method to compute isotropic band models from anisotropic semiconductor band structures 146
Application of the Wigner-function formulation to mesoscopic systems in presence of the electron- phonon interaction 145
Distributed multi-level hierarchic strategy for broadcast collaborative mobile networks 145
A multi-Band Monte Carlo approach to Coulomb interaction for device analysis 144
Mobility simulation in Si/SiGe heterostructure FETs 140
Mobility simulation in Si/SiGe heterostructure FETs 140
An efficient impact ionization model for silicon Monte Carlo simulation 135
An Integrated Sensing/Communication Architecture for Structural Health Monitoring 135
Monte Carlo simulation of carrier-carrier interaction in silicon devices 134
Modeling electron transport in MOSFET devices: evolution and state of the art 134
Mobility simulation of a novel Si/SiGe FET structure 133
Performance optimization in Si/SiGe heterostructure FETs 131
A new architecture for digital stochastic pulse-mode neurons based on the voting circuit 131
A fully pipelined architecture for the LOCO-I compression algorithm 130
Density of states of a two-dimensional electron gas measured by high resolution photoelectron spectroscopy 129
Modeling electron transport in MOSFET devices: evolution and state of the art 127
Transmission properties of resonant cavities and rough quantum wells 126
A numerical method to compute isotropic band models from anisotropic semiconductor band structures 125
An FPGA-based versatile development system for endoscopic capsule design optimization 125
Modeling of high energy transport in silicon by means of the Monte Carlo method 124
Hot-holes generation and transport in n-MOSFETS: a Monte Carlo investigation 124
Optimization of channel profiles for ultra-short MOSFETs by quantum simulation 123
Quantum effects in the simulation of conventional devices 122
Hot carrier effects in short MOSFETs at low applied voltages 119
A multi-band model for hole transport in silicon at high energies 119
The synthesis of stochastic artificial neural network application using a genetic algorithm approach 117
Quantum transport of electrons in open nanostructures with the Wigner-function formalism 115
Wigner-function for open systems with electron-phonon interaction 114
Il miracolo dell'ubiquità 113
A combined transport-injection model for hot-electron and hot-hole injection in the gate oxide of MOS structures 110
Full-band Monte Carlo analysis of hot-carrier light emission in GaAs 109
Analysis of quantum effects in non-uniformly doped MOS structure 108
Mobility modelling of SOI MOSFETs 107
A mixed convex/non-convex distributed localization approach for the deployment of indoor positioning services 107
Optimization of physical parameters for high energy transport simulation in Si based on efficient electron energy distribution calculation 106
Physical origin of the excess thermal noise in short channel MOSFETs 106
Electron energy distributions in silicon structures at low applied voltages and high electric fields 106
A comparison between semi-classical and quantum-mechanical escape-times for gate current calculations 106
Non-local effects on the electron energy distribution in short devices under high-field conditions 105
n.a. 104
Unified Monte Carlo approach to the Boltzmann and Wigner equations” 102
Modeling of high energy electrons in n-MOSFETs 102
Investigation on convergence and stability of self-consistent Monte Carlo device simulations 101
null 101
An FPGA-based flexible demo-board for endoscopic capsule design optimization 100
Simulation study of the impact of channel doping profiles on MOSFET analog performance 99
An Improved Model for Electron Mobility Degradation by Remote Coulomb Scattering in Ultra-Thin Oxide MOSFETs 99
Impact Ionization and Photon Emission in MOS Capacitors and FETs 99
An isotropic best-fitting band model for electrons and hole transport in Silicon 97
Device simulation of small silicon MOSFET's using the Monte Carlo method 97
Single- and double-gate SOI MOS structures for future ULSI: a simulation study 92
Mixed convex/non-convex distributed localization algorithm for the deployment of indoor positioning services 92
Two dimensional quantum simulation of silicon MOSFETs 91
Vision system for high frame rate wireless capsule endoscope 91
Closed- and Open- boundary Models for Gate-Current calculation in n-MOSFETs 89
A Comparative Analysis of Substrate Current Generation Mechanisms in Tunneling MOS Capacitors 88
Tunnelling Injection in Thin Oxide MOS Capacitors 87
Monte Carlo simulation of hot electrons in semiconductor devices 87
Physically Based modeling of Low Field Electron Mobility in Ultrathin Single- and Double-Gate SOI n-MOSFETs 87
Modeling of electron mobility degradation by remote Coulomb scattering in ultrathin oxide MOSFETs 87
Device simulation for decananometer MOSFETs 85
Solution of 1-D Schrödinger and Poisson equations in single and double gate SOI MOS 80
Study of low field electron transport in ultra-thin single and double gate SOI MOSFETs 80
Analytical and numerical study of the impact of HALOS on short channel and hot carrier effects in scaled MOSFETs 80
Well-tempered MOSFETs: 1D versus 2D quantum analysis 78
Carrier Quantization in SOI MOSFETs using an Effective Potential Based Monte-Carlo Tool 77
Two-dimensional quantum mechanical simulation of charge distribution in silicon MOSFETs 77
Simulation of tunneling gate currents in ultra-thin SOI MOSFETs 73
A new stochastic neuron architecture for efficient FPGA implementation 73
Density of states of a two-dimensional electron gas at semiconductor surfaces 72
Deformation detection in Structural Health Monitoring” 68
Two-dimensional quantum simulation of silicon MOSFETs 66
A new microscopic model for hole transport in silicon with application to sub-micron LDD MOSFETs 61
Advanced Physically Based Device Modeling for Gate Current and Hot Carrier Phenomena in Scaled MOSFETs 58
Le tecnologie dell'informazione e i servizi per l'accessibilità 53
Quantitative Assesment of mobility degradation by Remote Coulomb Scattering in Ultra-thin oxide MOSFETs: measurement and simulations 45
Short channel and hot carrier performance of ULSI MOSFETs with halo structures 44
Development of a Smart Chair Sensors System and Classification of Sitting Postures with Deep Learning Algorithms 40
Two-dimensional quantum mechanical aspects in the charge distribution of ULSI silicon MOSFETs 39
On the Optimization of HALOs for 0.1 micron MOSFETs and Below 33
Biometric security domain 28
Phase time for coherent transport in two-dimensional structures 25
Security, Privacy, and Dependability Technologies 20
Totale 8.607
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Categoria #
all - tutte 25.452
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 25.452
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/20201.437 0 0 0 0 165 306 213 240 157 174 43 139
2020/20211.199 108 139 23 146 23 164 61 107 191 49 134 54
2021/2022900 38 81 177 87 4 33 42 23 8 121 159 127
2022/2023818 109 80 32 101 72 223 0 38 126 7 9 21
2023/2024272 24 40 2 1 33 53 0 20 37 18 19 25
2024/2025383 45 102 69 25 142 0 0 0 0 0 0 0
Totale 8.607