IRIS
ABRAMO, Antonio
 Distribuzione geografica
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Continente #
NA - Nord America 6.183
EU - Europa 2.114
AS - Asia 945
SA - Sud America 145
AF - Africa 17
Continente sconosciuto - Info sul continente non disponibili 3
Totale 9.407
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Nazione #
US - Stati Uniti d'America 6.148
DE - Germania 620
SG - Singapore 538
UA - Ucraina 496
CN - Cina 228
SE - Svezia 217
RU - Federazione Russa 210
IT - Italia 200
FI - Finlandia 168
BR - Brasile 132
IE - Irlanda 98
TR - Turchia 88
KR - Corea 56
GB - Regno Unito 46
CA - Canada 29
BE - Belgio 16
FR - Francia 15
IN - India 8
CZ - Repubblica Ceca 7
IQ - Iraq 7
TG - Togo 7
NL - Olanda 6
MX - Messico 5
AR - Argentina 4
BD - Bangladesh 4
CH - Svizzera 4
CL - Cile 4
ZA - Sudafrica 4
CO - Colombia 3
EU - Europa 3
HK - Hong Kong 3
JP - Giappone 3
KE - Kenya 3
OM - Oman 2
PK - Pakistan 2
PL - Polonia 2
TW - Taiwan 2
AL - Albania 1
AT - Austria 1
BO - Bolivia 1
CY - Cipro 1
DZ - Algeria 1
EC - Ecuador 1
EE - Estonia 1
ES - Italia 1
GR - Grecia 1
KZ - Kazakistan 1
LK - Sri Lanka 1
LT - Lituania 1
LV - Lettonia 1
MA - Marocco 1
PA - Panama 1
PT - Portogallo 1
RS - Serbia 1
TN - Tunisia 1
UZ - Uzbekistan 1
Totale 9.407
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Città #
Woodbridge 830
Fairfield 749
Ann Arbor 637
Houston 564
Chandler 399
Jacksonville 377
Singapore 319
Ashburn 315
Seattle 315
Wilmington 305
Cambridge 261
Dearborn 181
Beijing 124
San Mateo 114
Boardman 101
Dublin 98
Princeton 83
Izmir 70
Udine 67
Seoul 56
San Diego 39
New York 38
Des Moines 32
Ottawa 25
Ogden 23
Los Angeles 17
Grafing 13
Kocaeli 13
Brussels 12
Norwalk 12
Milan 11
Guangzhou 8
Hefei 8
Nanjing 8
Düsseldorf 7
Lomé 7
Santa Clara 7
Belo Horizonte 6
Como 6
Kunming 6
Brno 5
Portsmouth 5
Rome 5
Shanghai 5
São Paulo 5
Treviso 5
Baghdad 4
Helsinki 4
Jinan 4
Lauterbourg 4
Moscow 4
Shenyang 4
Wuhan 4
Xian 4
Brasília 3
Codroipo 3
Hangzhou 3
Hebei 3
Hong Kong 3
Johannesburg 3
Mexico City 3
Munich 3
Nairobi 3
Ningbo 3
Palmanova 3
Saint Petersburg 3
Turin 3
Andover 2
Aracaju 2
Baotou 2
Bogotá 2
Bologna 2
Cambé 2
Campina Grande 2
Changsha 2
Changzhou 2
Chengdu 2
Contagem 2
Dallas 2
Drò 2
Frankfurt am Main 2
Garanhuns 2
Guarulhos 2
Jaú 2
Lahore 2
Lappeenranta 2
Nanchang 2
Nantong 2
Naples 2
Olomouc 2
Palermo 2
Paulista 2
Pieris 2
Ponta Grossa 2
Rende 2
Ribeirão Preto 2
Romans D'isonzo 2
Salvador 2
San Francisco 2
Stockholm 2
Totale 6.430
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Nome #
A general purpose 2D Schrödinger solver with open/closed boundary conditions for quantum device analysis 164
A numerical method to compute isotropic band models from anisotropic semiconductor band structures 161
Application of the Wigner-function formulation to mesoscopic systems in presence of the electron- phonon interaction 160
A comparison of numerical solutions of the Boltzmann Transport Equation for high energy electron transport silicon 159
A multi-Band Monte Carlo approach to Coulomb interaction for device analysis 155
The correspondence between deterministic and stochastic digital neurons: analysis and methodology 155
Distributed multi-level hierarchic strategy for broadcast collaborative mobile networks 152
Mobility simulation in Si/SiGe heterostructure FETs 149
An efficient impact ionization model for silicon Monte Carlo simulation 147
Mobility simulation in Si/SiGe heterostructure FETs 146
A new architecture for digital stochastic pulse-mode neurons based on the voting circuit 146
Mobility simulation of a novel Si/SiGe FET structure 145
An Integrated Sensing/Communication Architecture for Structural Health Monitoring 144
A fully pipelined architecture for the LOCO-I compression algorithm 143
Monte Carlo simulation of carrier-carrier interaction in silicon devices 140
A numerical method to compute isotropic band models from anisotropic semiconductor band structures 139
An FPGA-based versatile development system for endoscopic capsule design optimization 139
Modeling electron transport in MOSFET devices: evolution and state of the art 138
Performance optimization in Si/SiGe heterostructure FETs 137
Density of states of a two-dimensional electron gas measured by high resolution photoelectron spectroscopy 137
Transmission properties of resonant cavities and rough quantum wells 136
A multi-band model for hole transport in silicon at high energies 134
Hot-holes generation and transport in n-MOSFETS: a Monte Carlo investigation 133
Modeling electron transport in MOSFET devices: evolution and state of the art 132
Optimization of channel profiles for ultra-short MOSFETs by quantum simulation 132
Modeling of high energy transport in silicon by means of the Monte Carlo method 132
Quantum effects in the simulation of conventional devices 129
Hot carrier effects in short MOSFETs at low applied voltages 128
A combined transport-injection model for hot-electron and hot-hole injection in the gate oxide of MOS structures 125
A comparison between semi-classical and quantum-mechanical escape-times for gate current calculations 125
Quantum transport of electrons in open nanostructures with the Wigner-function formalism 124
The synthesis of stochastic artificial neural network application using a genetic algorithm approach 124
Wigner-function for open systems with electron-phonon interaction 123
Il miracolo dell'ubiquità 120
A mixed convex/non-convex distributed localization approach for the deployment of indoor positioning services 119
Analysis of quantum effects in non-uniformly doped MOS structure 117
Full-band Monte Carlo analysis of hot-carrier light emission in GaAs 117
Non-local effects on the electron energy distribution in short devices under high-field conditions 115
Mobility modelling of SOI MOSFETs 115
Investigation on convergence and stability of self-consistent Monte Carlo device simulations 115
n.a. 114
Unified Monte Carlo approach to the Boltzmann and Wigner equations” 113
Optimization of physical parameters for high energy transport simulation in Si based on efficient electron energy distribution calculation 113
An Improved Model for Electron Mobility Degradation by Remote Coulomb Scattering in Ultra-Thin Oxide MOSFETs 113
Vision system for high frame rate wireless capsule endoscope 113
Electron energy distributions in silicon structures at low applied voltages and high electric fields 113
Physical origin of the excess thermal noise in short channel MOSFETs 112
An FPGA-based flexible demo-board for endoscopic capsule design optimization 109
Impact Ionization and Photon Emission in MOS Capacitors and FETs 109
Simulation study of the impact of channel doping profiles on MOSFET analog performance 108
Modeling of high energy electrons in n-MOSFETs 108
Device simulation of small silicon MOSFET's using the Monte Carlo method 107
An isotropic best-fitting band model for electrons and hole transport in Silicon 106
Monte Carlo simulation of hot electrons in semiconductor devices 103
A Comparative Analysis of Substrate Current Generation Mechanisms in Tunneling MOS Capacitors 103
null 101
Single- and double-gate SOI MOS structures for future ULSI: a simulation study 100
Closed- and Open- boundary Models for Gate-Current calculation in n-MOSFETs 100
Two dimensional quantum simulation of silicon MOSFETs 99
Device simulation for decananometer MOSFETs 99
Mixed convex/non-convex distributed localization algorithm for the deployment of indoor positioning services 99
Physically Based modeling of Low Field Electron Mobility in Ultrathin Single- and Double-Gate SOI n-MOSFETs 98
Tunnelling Injection in Thin Oxide MOS Capacitors 94
Carrier Quantization in SOI MOSFETs using an Effective Potential Based Monte-Carlo Tool 92
Modeling of electron mobility degradation by remote Coulomb scattering in ultrathin oxide MOSFETs 91
Density of states of a two-dimensional electron gas at semiconductor surfaces 90
A new stochastic neuron architecture for efficient FPGA implementation 89
Solution of 1-D Schrödinger and Poisson equations in single and double gate SOI MOS 88
Study of low field electron transport in ultra-thin single and double gate SOI MOSFETs 87
Analytical and numerical study of the impact of HALOS on short channel and hot carrier effects in scaled MOSFETs 87
Two-dimensional quantum mechanical simulation of charge distribution in silicon MOSFETs 86
Well-tempered MOSFETs: 1D versus 2D quantum analysis 83
Simulation of tunneling gate currents in ultra-thin SOI MOSFETs 80
Two-dimensional quantum simulation of silicon MOSFETs 74
A new microscopic model for hole transport in silicon with application to sub-micron LDD MOSFETs 74
Deformation detection in Structural Health Monitoring” 74
Advanced Physically Based Device Modeling for Gate Current and Hot Carrier Phenomena in Scaled MOSFETs 71
Quantitative Assesment of mobility degradation by Remote Coulomb Scattering in Ultra-thin oxide MOSFETs: measurement and simulations 59
Le tecnologie dell'informazione e i servizi per l'accessibilità 57
Development of a Smart Chair Sensors System and Classification of Sitting Postures with Deep Learning Algorithms 56
Short channel and hot carrier performance of ULSI MOSFETs with halo structures 51
Two-dimensional quantum mechanical aspects in the charge distribution of ULSI silicon MOSFETs 44
On the Optimization of HALOs for 0.1 micron MOSFETs and Below 43
Biometric security domain 33
Phase time for coherent transport in two-dimensional structures 30
Security, Privacy, and Dependability Technologies 26
Totale 9.450
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Categoria #
all - tutte 30.467
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 30.467
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/2020139 0 0 0 0 0 0 0 0 0 0 0 139
2020/20211.199 108 139 23 146 23 164 61 107 191 49 134 54
2021/2022900 38 81 177 87 4 33 42 23 8 121 159 127
2022/2023818 109 80 32 101 72 223 0 38 126 7 9 21
2023/2024272 24 40 2 1 33 53 0 20 37 18 19 25
2024/20251.226 45 102 69 25 157 67 80 89 179 131 276 6
Totale 9.450