ABRAMO, Antonio
 Distribuzione geografica
Continente #
NA - Nord America 7.549
AS - Asia 2.496
EU - Europa 2.403
SA - Sud America 423
Continente sconosciuto - Info sul continente non disponibili 54
AF - Africa 44
OC - Oceania 2
Totale 12.971
Nazione #
US - Stati Uniti d'America 7.446
SG - Singapore 1.180
DE - Germania 650
CN - Cina 528
UA - Ucraina 500
BR - Brasile 328
IT - Italia 271
HK - Hong Kong 224
RU - Federazione Russa 221
SE - Svezia 220
FI - Finlandia 184
VN - Vietnam 179
FR - Francia 102
TR - Turchia 101
IE - Irlanda 100
IN - India 86
GB - Regno Unito 71
KR - Corea 56
CA - Canada 54
BD - Bangladesh 34
AR - Argentina 29
MX - Messico 26
IQ - Iraq 25
BE - Belgio 17
ID - Indonesia 16
CO - Colombia 15
CL - Cile 14
NL - Olanda 14
ZA - Sudafrica 11
EC - Ecuador 10
ES - Italia 10
PK - Pakistan 10
PL - Polonia 10
JP - Giappone 9
VE - Venezuela 9
CZ - Repubblica Ceca 8
KE - Kenya 7
PY - Paraguay 7
TG - Togo 7
CR - Costa Rica 5
IL - Israele 5
KZ - Kazakistan 5
MA - Marocco 5
SA - Arabia Saudita 5
AT - Austria 4
AZ - Azerbaigian 4
CH - Svizzera 4
DO - Repubblica Dominicana 4
DZ - Algeria 4
PH - Filippine 4
UY - Uruguay 4
BO - Bolivia 3
EU - Europa 3
GT - Guatemala 3
HN - Honduras 3
JM - Giamaica 3
PE - Perù 3
PS - Palestinian Territory 3
RS - Serbia 3
TN - Tunisia 3
TW - Taiwan 3
AE - Emirati Arabi Uniti 2
EE - Estonia 2
EG - Egitto 2
HU - Ungheria 2
JO - Giordania 2
MK - Macedonia 2
MY - Malesia 2
NI - Nicaragua 2
NP - Nepal 2
OM - Oman 2
PA - Panama 2
TH - Thailandia 2
UZ - Uzbekistan 2
AL - Albania 1
AU - Australia 1
BA - Bosnia-Erzegovina 1
BS - Bahamas 1
BY - Bielorussia 1
CW - ???statistics.table.value.countryCode.CW??? 1
CY - Cipro 1
DK - Danimarca 1
GH - Ghana 1
GR - Grecia 1
KW - Kuwait 1
LB - Libano 1
LK - Sri Lanka 1
LT - Lituania 1
LV - Lettonia 1
LY - Libia 1
MG - Madagascar 1
MM - Myanmar 1
NZ - Nuova Zelanda 1
PT - Portogallo 1
SR - Suriname 1
UG - Uganda 1
XK - ???statistics.table.value.countryCode.XK??? 1
ZW - Zimbabwe 1
Totale 12.922
Città #
Woodbridge 830
Fairfield 749
Ann Arbor 637
Houston 569
Singapore 490
Ashburn 423
Chandler 393
Jacksonville 377
Seattle 320
Wilmington 308
Cambridge 261
Beijing 256
San Jose 230
Hong Kong 221
Dearborn 181
Council Bluffs 156
Boardman 122
San Mateo 114
The Dalles 114
Dublin 100
Princeton 84
Los Angeles 82
Lauterbourg 79
Ho Chi Minh City 74
Izmir 70
Udine 69
New York 62
Hefei 60
Seoul 56
Buffalo 55
Mumbai 49
San Diego 42
Hanoi 40
Dallas 37
Des Moines 31
Santa Clara 29
São Paulo 26
Ottawa 25
Ogden 23
Orem 21
Milan 17
Munich 16
Phoenix 16
Padua 15
Chicago 14
Helsinki 14
Atlanta 13
Brussels 13
Grafing 13
Kocaeli 13
Redondo Beach 13
Norwalk 12
Frankfurt am Main 11
Belo Horizonte 10
Calci 10
Baghdad 9
Mexico City 9
Warsaw 9
Chennai 8
Denver 8
Guangzhou 8
Nanjing 8
Rome 8
Bogotá 7
Da Nang 7
Düsseldorf 7
Lomé 7
Manchester 7
Montreal 7
Moscow 7
Nairobi 7
Tokyo 7
Toronto 7
Boston 6
Brooklyn 6
Como 6
Johannesburg 6
Kunming 6
Rio de Janeiro 6
Salvador 6
Turku 6
Amsterdam 5
Biên Hòa 5
Brno 5
Charlotte 5
Haiphong 5
London 5
Poplar 5
Portsmouth 5
San Francisco 5
Santiago 5
Shanghai 5
Stockholm 5
Thái Bình 5
Ankara 4
Buenos Aires 4
Changsha 4
Depok 4
Dhaka 4
Hải Dương 4
Totale 8.339
Nome #
A general purpose 2D Schrödinger solver with open/closed boundary conditions for quantum device analysis 221
A comparison of numerical solutions of the Boltzmann Transport Equation for high energy electron transport silicon 214
A multi-Band Monte Carlo approach to Coulomb interaction for device analysis 209
A numerical method to compute isotropic band models from anisotropic semiconductor band structures 204
A new architecture for digital stochastic pulse-mode neurons based on the voting circuit 203
An efficient impact ionization model for silicon Monte Carlo simulation 195
Application of the Wigner-function formulation to mesoscopic systems in presence of the electron- phonon interaction 194
Mobility simulation in Si/SiGe heterostructure FETs 194
An Integrated Sensing/Communication Architecture for Structural Health Monitoring 188
A fully pipelined architecture for the LOCO-I compression algorithm 187
Mobility simulation in Si/SiGe heterostructure FETs 186
A numerical method to compute isotropic band models from anisotropic semiconductor band structures 182
Distributed multi-level hierarchic strategy for broadcast collaborative mobile networks 182
The correspondence between deterministic and stochastic digital neurons: analysis and methodology 182
A comparison between semi-classical and quantum-mechanical escape-times for gate current calculations 181
Monte Carlo simulation of carrier-carrier interaction in silicon devices 180
Optimization of physical parameters for high energy transport simulation in Si based on efficient electron energy distribution calculation 180
A mixed convex/non-convex distributed localization approach for the deployment of indoor positioning services 180
Mobility simulation of a novel Si/SiGe FET structure 179
A multi-band model for hole transport in silicon at high energies 178
Modeling of high energy transport in silicon by means of the Monte Carlo method 177
A combined transport-injection model for hot-electron and hot-hole injection in the gate oxide of MOS structures 177
n.a. 176
Transmission properties of resonant cavities and rough quantum wells 173
An FPGA-based versatile development system for endoscopic capsule design optimization 172
Modeling electron transport in MOSFET devices: evolution and state of the art 169
Density of states of a two-dimensional electron gas measured by high resolution photoelectron spectroscopy 167
Performance optimization in Si/SiGe heterostructure FETs 166
Modeling electron transport in MOSFET devices: evolution and state of the art 164
Hot-holes generation and transport in n-MOSFETS: a Monte Carlo investigation 163
Non-local effects on the electron energy distribution in short devices under high-field conditions 160
Hot carrier effects in short MOSFETs at low applied voltages 160
Investigation on convergence and stability of self-consistent Monte Carlo device simulations 160
Impact Ionization and Photon Emission in MOS Capacitors and FETs 160
Quantum effects in the simulation of conventional devices 158
Unified Monte Carlo approach to the Boltzmann and Wigner equations” 157
Optimization of channel profiles for ultra-short MOSFETs by quantum simulation 157
An isotropic best-fitting band model for electrons and hole transport in Silicon 155
Device simulation of small silicon MOSFET's using the Monte Carlo method 155
Physical origin of the excess thermal noise in short channel MOSFETs 155
Wigner-function for open systems with electron-phonon interaction 154
An Improved Model for Electron Mobility Degradation by Remote Coulomb Scattering in Ultra-Thin Oxide MOSFETs 154
A Comparative Analysis of Substrate Current Generation Mechanisms in Tunneling MOS Capacitors 154
Physically Based modeling of Low Field Electron Mobility in Ultrathin Single- and Double-Gate SOI n-MOSFETs 153
Full-band Monte Carlo analysis of hot-carrier light emission in GaAs 153
The synthesis of stochastic artificial neural network application using a genetic algorithm approach 153
Quantum transport of electrons in open nanostructures with the Wigner-function formalism 152
Vision system for high frame rate wireless capsule endoscope 152
An FPGA-based flexible demo-board for endoscopic capsule design optimization 152
Analysis of quantum effects in non-uniformly doped MOS structure 151
Il miracolo dell'ubiquità 151
Mobility modelling of SOI MOSFETs 150
Device simulation for decananometer MOSFETs 150
Simulation study of the impact of channel doping profiles on MOSFET analog performance 145
Modeling of high energy electrons in n-MOSFETs 145
Closed- and Open- boundary Models for Gate-Current calculation in n-MOSFETs 145
Electron energy distributions in silicon structures at low applied voltages and high electric fields 143
Tunnelling Injection in Thin Oxide MOS Capacitors 141
Study of low field electron transport in ultra-thin single and double gate SOI MOSFETs 138
Development of a Smart Chair Sensors System and Classification of Sitting Postures with Deep Learning Algorithms 137
Density of states of a two-dimensional electron gas at semiconductor surfaces 135
Monte Carlo simulation of hot electrons in semiconductor devices 134
Modeling of electron mobility degradation by remote Coulomb scattering in ultrathin oxide MOSFETs 133
Two dimensional quantum simulation of silicon MOSFETs 132
Carrier Quantization in SOI MOSFETs using an Effective Potential Based Monte-Carlo Tool 132
Two-dimensional quantum mechanical simulation of charge distribution in silicon MOSFETs 132
A new stochastic neuron architecture for efficient FPGA implementation 128
Single- and double-gate SOI MOS structures for future ULSI: a simulation study 127
Mixed convex/non-convex distributed localization algorithm for the deployment of indoor positioning services 123
Analytical and numerical study of the impact of HALOS on short channel and hot carrier effects in scaled MOSFETs 122
Solution of 1-D Schrödinger and Poisson equations in single and double gate SOI MOS 121
Well-tempered MOSFETs: 1D versus 2D quantum analysis 119
A new microscopic model for hole transport in silicon with application to sub-micron LDD MOSFETs 118
Advanced Physically Based Device Modeling for Gate Current and Hot Carrier Phenomena in Scaled MOSFETs 115
Two-dimensional quantum simulation of silicon MOSFETs 114
Deformation detection in Structural Health Monitoring” 114
Simulation of tunneling gate currents in ultra-thin SOI MOSFETs 113
Phase time for coherent transport in two-dimensional structures 113
On the Optimization of HALOs for 0.1 micron MOSFETs and Below 100
Quantitative Assesment of mobility degradation by Remote Coulomb Scattering in Ultra-thin oxide MOSFETs: measurement and simulations 99
Short channel and hot carrier performance of ULSI MOSFETs with halo structures 98
Le tecnologie dell'informazione e i servizi per l'accessibilità 90
Security, Privacy, and Dependability Technologies 89
Two-dimensional quantum mechanical aspects in the charge distribution of ULSI silicon MOSFETs 84
Biometric security domain 70
Impact of Scattering on Graphene Geometric Diodes: A Comparative Analysis Between Simulations and Experiments 43
Totale 12.971
Categoria #
all - tutte 43.634
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 43.634


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/2022604 0 0 0 87 4 33 42 23 8 121 159 127
2022/2023801 109 80 32 98 72 217 0 38 120 6 8 21
2023/2024267 24 39 2 1 33 53 0 16 37 18 19 25
2024/20251.612 45 101 69 24 156 66 79 88 179 131 274 400
2025/20262.631 126 287 229 265 414 268 351 79 136 215 144 117
2026/2027526 81 167 234 44 0 0 0 0 0 0 0 0
Totale 12.971