Sfoglia per Autore
The impact of interface states on the mobility and the drive current of III-V MOSFETs
2014-01-01 Osgnach, Patrik; Caruso, Enrico; Lizzit, Daniel; Palestri, Pierpaolo; Esseni, David; Selmi, Luca
Improved surface roughness modeling and mobility projections in thin film MOSFETs
2015-01-01 Badami, Oves Mohamed Hussein; Caruso, Enrico; Lizzit, Daniel; Esseni, David; Palestri, Pierpaolo; Selmi, Luca
State-of-the-art semi-classical Monte Carlo method for carrier transport in nanoscale transistors
2015-01-01 Palestri, Pierpaolo; Caruso, Enrico; Driussi, Francesco; Esseni, David; Lizzit, Daniel; Osgnach, Patrik; Venica, Stefano; Selmi, Luca
Low-voltage high-performance III-V semiconductor MOSFETs for advanced CMOS nodes: impact of strain and interface traps
2015-01-01 Osgnach, Patrik; Caruso, Enrico; Lizzit, Daniel; Palestri, Pierpaolo; Esseni, David; Selmi, Luca
Simulation analysis of III-V n-MOSFETs: channel materials, Fermi level pinning and biaxial strain
2015-01-01 Caruso, Enrico; Lizzit, Daniel; Osgnach, Patrik; Esseni, David; Palestri, Pierpaolo; Selmi, Luca
The impact of interface states on the mobility and drive current of In 0.53Ga 0.47As semiconductor n-MOSFETs
2015-01-01 Osgnach, Patrik; Caruso, Enrico; Lizzit, Daniel; Palestri, Pierpaolo; Esseni, David; Selmi, Luca
Modeling approaches for band-structure calculation in III-V FET quantum wells
2015-01-01 Caruso, Enrico; Zerveas, G.; Baccarani, G.; Czornomaz, L.; Daix, N.; Esseni, David; Gnani, E.; Gnudi, A.; Grassi, R.; Luisier, M.; Markussen, T.; Palestri, Pierpaolo; Schenk, A.; Selmi, Luca; Sousa, M.; Stokbro, K.; Visciarelli, M.
Comprehensive comparison and experimental validation of band-structure calculation methods in III–V semiconductor quantum wells
2016-01-01 Zerveas, George; Caruso, Enrico; Baccarani, Giorgio; Czornomaz, Lukas; Daix, Nicolas; Esseni, David; Gnani, Elena; Gnudi, Antonio; Grassi, Roberto; Luisier, Mathieu; Markussen, Troels; Osgnach, Patrik; Palestri, Pierpaolo; Schenk, Andreas; Selmi, Luca; Sousa, Marilyne; Stokbro, Kurt; Visciarelli, Michele
Performance Study of Strained III-V Materials for Ultra-Thin Body Transistor Applications
2016-01-01 Rau, Martin; Markussen, Troels; Caruso, Enrico; Esseni, David; Gnani, Elena; Gnudi, Antonio; Khomyakov, Petr A.; Luisier, Mathieu; Osgnach, Patrik; Palestri, Pierpaolo; Reggiani, Susanna; Schenk, Andreas; Selmi, Luca; Stokbro, Kurt
An Improved Surface Roughness Scattering Model for Bulk, Thin-Body, and Quantum-Well MOSFETs
2016-01-01 Badami, Oves Mohamed Hussein; Caruso, Enrico; Lizzit, Daniel; Osgnach, Patrik; Esseni, David; Palestri, Pierpaolo; Selmi, Luca
TCAD low-field mobility model for InGaAs UTB MOSFETs including quasi-ballistic corrections
2016-01-01 Carapezzi, Stefania; Caruso, Enrico; Gnudi, Antonio; Reggiani, Susanna; Gnani, Elena
Quasi-Ballistic Gamma - and L-Valleys Transport in Ultrathin Body Strained (111) GaAs nMOSFETs
2016-01-01 Caruso, Enrico; Palestri, Pierpaolo; Lizzit, Daniel; Osgnach, Patrik; Esseni, David; Selmi, Luca
Modelling nanoscale n-MOSFETs with III-V compound semiconductor channels: from advanced models for band structures, electrostatics and transport to TCAD
2017-01-01 Selmi, L; Caruso, E; Carapezzi, S; Visciarelli, M; Gnani, E; Zagni, N; Pavan, P; Palestri, P; Esseni, D; Gnudi, A; Reggiani, S; Puglisi, F. M.; Verzellesi, G.
Performance Projection of III-V Ultra-Thin-Body, FinFET, and Nanowire MOSFETs for two Next-Generation Technology Nodes
2017-01-01 Rau, M.; Caruso, Enrico; Lizzit, D.; Palestri, Pierpaolo; Esseni, David; Schenk, A.; Selmi, Luca; Luisier, M.
On the electron velocity-field relation in ultra-thin films of III–V compound semiconductors for advanced CMOS technology nodes
2017-01-01 Caruso, Enrico; Pin, Alessandro; Palestri, Pierpaolo; Selmi, Luca
A scaled replacement metal gate InGaAs-on-Insulator n-FinFET on Si with record performance
2017-01-01 Hahn, H.; Deshpande, V.; Caruso, E.; Sant, S.; O'Connor, E.; Baumgartner, Y.; Sousa, M.; Caimi, D.; Olziersky, A.; Palestri, P.; Selmi, L.; Schenk, A.; Czornomaz, L.
TCAD Mobility Model of III-V Short-Channel Double-Gate FETs Including Ballistic Corrections
2017-01-01 Carapezzi, Stefania; Caruso, Enrico; Gnudi, Antonio; Palestri, Pierpaolo; Reggiani, Susanna; Gnani, Elena
Performance evaluation of III-V compound semiconductor n-MOSFETs employing calibrated multi-valley and Multi-Subband Monte Carlo transport models
2017-03-23 Caruso, Enrico
Profiling border-traps by TCAD analysis of multifrequency CV-curves in Al2O3/InGaAs stacks
2018-01-01 Caruso, E.; Lin, J.; Burke, K. F.; Cherkaoui, K.; Esseni, D.; Gity, F.; Monaghan, S.; Palestri, P.; Hurley, P.; Selmi, L.
Modeling 1/f and Lorenzian noise in III-V MOSFETs
2019-01-01 Caruso, E.; Bettetti, F.; DEL LINZ, Leonida; Pin, D.; Segatto, M.; Palestri, P.
Titolo | Data di pubblicazione | Autore(i) | File |
---|---|---|---|
The impact of interface states on the mobility and the drive current of III-V MOSFETs | 1-gen-2014 | Osgnach, Patrik; Caruso, Enrico; Lizzit, Daniel; Palestri, Pierpaolo; Esseni, David; Selmi, Luca | |
Improved surface roughness modeling and mobility projections in thin film MOSFETs | 1-gen-2015 | Badami, Oves Mohamed Hussein; Caruso, Enrico; Lizzit, Daniel; Esseni, David; Palestri, Pierpaolo; Selmi, Luca | |
State-of-the-art semi-classical Monte Carlo method for carrier transport in nanoscale transistors | 1-gen-2015 | Palestri, Pierpaolo; Caruso, Enrico; Driussi, Francesco; Esseni, David; Lizzit, Daniel; Osgnach, Patrik; Venica, Stefano; Selmi, Luca | |
Low-voltage high-performance III-V semiconductor MOSFETs for advanced CMOS nodes: impact of strain and interface traps | 1-gen-2015 | Osgnach, Patrik; Caruso, Enrico; Lizzit, Daniel; Palestri, Pierpaolo; Esseni, David; Selmi, Luca | |
Simulation analysis of III-V n-MOSFETs: channel materials, Fermi level pinning and biaxial strain | 1-gen-2015 | Caruso, Enrico; Lizzit, Daniel; Osgnach, Patrik; Esseni, David; Palestri, Pierpaolo; Selmi, Luca | |
The impact of interface states on the mobility and drive current of In 0.53Ga 0.47As semiconductor n-MOSFETs | 1-gen-2015 | Osgnach, Patrik; Caruso, Enrico; Lizzit, Daniel; Palestri, Pierpaolo; Esseni, David; Selmi, Luca | |
Modeling approaches for band-structure calculation in III-V FET quantum wells | 1-gen-2015 | Caruso, Enrico; Zerveas, G.; Baccarani, G.; Czornomaz, L.; Daix, N.; Esseni, David; Gnani, E.; Gnudi, A.; Grassi, R.; Luisier, M.; Markussen, T.; Palestri, Pierpaolo; Schenk, A.; Selmi, Luca; Sousa, M.; Stokbro, K.; Visciarelli, M. | |
Comprehensive comparison and experimental validation of band-structure calculation methods in III–V semiconductor quantum wells | 1-gen-2016 | Zerveas, George; Caruso, Enrico; Baccarani, Giorgio; Czornomaz, Lukas; Daix, Nicolas; Esseni, David; Gnani, Elena; Gnudi, Antonio; Grassi, Roberto; Luisier, Mathieu; Markussen, Troels; Osgnach, Patrik; Palestri, Pierpaolo; Schenk, Andreas; Selmi, Luca; Sousa, Marilyne; Stokbro, Kurt; Visciarelli, Michele | |
Performance Study of Strained III-V Materials for Ultra-Thin Body Transistor Applications | 1-gen-2016 | Rau, Martin; Markussen, Troels; Caruso, Enrico; Esseni, David; Gnani, Elena; Gnudi, Antonio; Khomyakov, Petr A.; Luisier, Mathieu; Osgnach, Patrik; Palestri, Pierpaolo; Reggiani, Susanna; Schenk, Andreas; Selmi, Luca; Stokbro, Kurt | |
An Improved Surface Roughness Scattering Model for Bulk, Thin-Body, and Quantum-Well MOSFETs | 1-gen-2016 | Badami, Oves Mohamed Hussein; Caruso, Enrico; Lizzit, Daniel; Osgnach, Patrik; Esseni, David; Palestri, Pierpaolo; Selmi, Luca | |
TCAD low-field mobility model for InGaAs UTB MOSFETs including quasi-ballistic corrections | 1-gen-2016 | Carapezzi, Stefania; Caruso, Enrico; Gnudi, Antonio; Reggiani, Susanna; Gnani, Elena | |
Quasi-Ballistic Gamma - and L-Valleys Transport in Ultrathin Body Strained (111) GaAs nMOSFETs | 1-gen-2016 | Caruso, Enrico; Palestri, Pierpaolo; Lizzit, Daniel; Osgnach, Patrik; Esseni, David; Selmi, Luca | |
Modelling nanoscale n-MOSFETs with III-V compound semiconductor channels: from advanced models for band structures, electrostatics and transport to TCAD | 1-gen-2017 | Selmi, L; Caruso, E; Carapezzi, S; Visciarelli, M; Gnani, E; Zagni, N; Pavan, P; Palestri, P; Esseni, D; Gnudi, A; Reggiani, S; Puglisi, F. M.; Verzellesi, G. | |
Performance Projection of III-V Ultra-Thin-Body, FinFET, and Nanowire MOSFETs for two Next-Generation Technology Nodes | 1-gen-2017 | Rau, M.; Caruso, Enrico; Lizzit, D.; Palestri, Pierpaolo; Esseni, David; Schenk, A.; Selmi, Luca; Luisier, M. | |
On the electron velocity-field relation in ultra-thin films of III–V compound semiconductors for advanced CMOS technology nodes | 1-gen-2017 | Caruso, Enrico; Pin, Alessandro; Palestri, Pierpaolo; Selmi, Luca | |
A scaled replacement metal gate InGaAs-on-Insulator n-FinFET on Si with record performance | 1-gen-2017 | Hahn, H.; Deshpande, V.; Caruso, E.; Sant, S.; O'Connor, E.; Baumgartner, Y.; Sousa, M.; Caimi, D.; Olziersky, A.; Palestri, P.; Selmi, L.; Schenk, A.; Czornomaz, L. | |
TCAD Mobility Model of III-V Short-Channel Double-Gate FETs Including Ballistic Corrections | 1-gen-2017 | Carapezzi, Stefania; Caruso, Enrico; Gnudi, Antonio; Palestri, Pierpaolo; Reggiani, Susanna; Gnani, Elena | |
Performance evaluation of III-V compound semiconductor n-MOSFETs employing calibrated multi-valley and Multi-Subband Monte Carlo transport models | 23-mar-2017 | Caruso, Enrico | |
Profiling border-traps by TCAD analysis of multifrequency CV-curves in Al2O3/InGaAs stacks | 1-gen-2018 | Caruso, E.; Lin, J.; Burke, K. F.; Cherkaoui, K.; Esseni, D.; Gity, F.; Monaghan, S.; Palestri, P.; Hurley, P.; Selmi, L. | |
Modeling 1/f and Lorenzian noise in III-V MOSFETs | 1-gen-2019 | Caruso, E.; Bettetti, F.; DEL LINZ, Leonida; Pin, D.; Segatto, M.; Palestri, P. |
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