REVELANT, Alberto
 Distribuzione geografica
Continente #
NA - Nord America 957
EU - Europa 175
AS - Asia 62
Continente sconosciuto - Info sul continente non disponibili 1
OC - Oceania 1
Totale 1.196
Nazione #
US - Stati Uniti d'America 955
UA - Ucraina 76
CN - Cina 41
DE - Germania 32
IT - Italia 26
FI - Finlandia 24
IE - Irlanda 11
IN - India 7
PK - Pakistan 4
ES - Italia 3
BD - Bangladesh 2
CA - Canada 2
KR - Corea 2
TW - Taiwan 2
VN - Vietnam 2
AT - Austria 1
AU - Australia 1
CH - Svizzera 1
EU - Europa 1
NL - Olanda 1
PH - Filippine 1
TR - Turchia 1
Totale 1.196
Città #
Woodbridge 162
Houston 135
Fairfield 99
Ann Arbor 85
Ashburn 57
Seattle 57
Jacksonville 51
Wilmington 37
Dearborn 34
Cambridge 33
Chandler 32
Beijing 16
Princeton 14
Dublin 11
Udine 9
San Diego 6
Nanjing 5
Cagliari 4
Gujrat 4
Kunming 4
Norwalk 4
Barcelona 3
Hefei 3
Munich 3
Pune 3
Dhubri 2
Dong Ket 2
Nanchang 2
Ogden 2
Ottawa 2
Ponzano 2
Shenyang 2
Taipei 2
Ulju-gun 2
Amsterdam 1
Baotou 1
Changsha 1
Chengdu 1
Coimbatore 1
Des Moines 1
Dumaguete 1
Garching 1
Guangzhou 1
Hebei 1
Huntington Station 1
Indiana 1
Izmir 1
Jinan 1
Los Angeles 1
Melbourne 1
New York 1
Quzhou 1
Rome 1
Simi Valley 1
Trieste 1
Wuhan 1
Yellow Springs 1
Zurich 1
Totale 913
Nome #
Analysis of the Performance of n-Type FinFETs With Strained SiGe Channel 138
On the Optimization of SiGe and III-V Compound Hetero-Junction Tunnel FET Devices 127
Toward computationally efficient Multi-Subband Monte Carlo simulations of nanoscale MOSFETs 114
An Improved Semi-Classical Model to Investigate Tunnel-FET performance 113
Multi-Subband Semi-classical Simulation of n-type Tunnel-FETs 110
Electron-Hole Bilayer TFET: Experiments and Comments 98
Calibrated multi-subband Monte Carlo modeling of tunnel-FETs in silicon and III–V channel materials 91
Device variability and correlation control by automated tuning of SPICE cards to PCM measurements 75
Challenges and opportunities in the design of Tunnel FETs: materials, device architectures, and defects 68
First Demonstration of Strained SiGe Nanowires TFETs with ION beyond 700μA/μm 67
High Performance SiGe Nanowire Tunnel FETs: Low Temperature Characterization for Device Process Optimization 66
An Improved Semi-classical Approach for Simulating Tunnel-FETs 62
Modelling, Simulation and Characterization of Tunnel-FET Devices for Ultra-low Power Electronics 51
Prognostic nutritional index predicts toxicity in head and neck cancer patients treated with definitive radiotherapy in association with chemotherapy 20
Totale 1.200
Categoria #
all - tutte 3.369
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 3.369


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2018/201977 0 0 0 0 0 0 0 0 0 17 37 23
2019/2020342 23 33 13 42 22 48 36 42 24 32 6 21
2020/2021147 2 23 0 20 7 24 5 14 21 4 21 6
2021/202299 5 8 3 2 0 11 3 4 2 19 27 15
2022/202379 14 7 11 3 2 17 0 5 10 3 0 7
2023/202480 10 6 7 0 11 20 2 17 6 1 0 0
Totale 1.200