REVELANT, Alberto
 Distribuzione geografica
Continente #
NA - Nord America 1.021
EU - Europa 235
AS - Asia 176
SA - Sud America 15
Continente sconosciuto - Info sul continente non disponibili 1
OC - Oceania 1
Totale 1.449
Nazione #
US - Stati Uniti d'America 1.017
UA - Ucraina 76
SG - Singapore 68
CN - Cina 66
DE - Germania 52
IT - Italia 26
RU - Federazione Russa 26
FI - Finlandia 25
BR - Brasile 12
IE - Irlanda 11
IN - India 11
KR - Corea 7
IQ - Iraq 5
AT - Austria 4
CA - Canada 4
FR - Francia 4
PK - Pakistan 4
ES - Italia 3
GB - Regno Unito 3
AR - Argentina 2
BD - Bangladesh 2
CZ - Repubblica Ceca 2
HK - Hong Kong 2
PH - Filippine 2
TW - Taiwan 2
VN - Vietnam 2
AE - Emirati Arabi Uniti 1
AU - Australia 1
CH - Svizzera 1
EC - Ecuador 1
EU - Europa 1
GE - Georgia 1
JO - Giordania 1
KZ - Kazakistan 1
NL - Olanda 1
PL - Polonia 1
TR - Turchia 1
Totale 1.449
Città #
Woodbridge 162
Houston 135
Fairfield 99
Ann Arbor 85
Ashburn 58
Seattle 57
Jacksonville 51
Singapore 43
Wilmington 37
Cambridge 35
Dearborn 34
Chandler 32
Beijing 18
Boardman 14
Munich 14
Princeton 14
Dublin 11
Shanghai 9
Udine 9
San Diego 7
Düsseldorf 6
Kirkuk 5
Nanjing 5
Cagliari 4
Gujrat 4
Kunming 4
Los Angeles 4
Norwalk 4
Barcelona 3
Changsha 3
Hefei 3
Pune 3
Shenzhen 3
Austin 2
Boston 2
Brooklyn 2
Dhubri 2
Dong Ket 2
Frankfurt am Main 2
Hong Kong 2
Kakkanad 2
Lauterbourg 2
Nanchang 2
Ogden 2
Ottawa 2
Pohang 2
Ponzano 2
Prague 2
Rūpnagar 2
Santa Clara 2
Shenyang 2
Shijiazhuang 2
Taipei 2
Ulju-gun 2
Ulsan 2
Almaty 1
Amman 1
Amsterdam 1
Anápolis 1
Baotou 1
Barbacena 1
Braúna 1
Buenos Aires 1
Charlotte 1
Chengdu 1
Coimbatore 1
Crateús 1
Dalian 1
Des Moines 1
Dumaguete 1
Durham 1
Fuzhou 1
Garching 1
Guangzhou 1
Halle 1
Hebei 1
Helsinki 1
Huntington Station 1
Indiana 1
Izmir 1
Jinan 1
João Câmara 1
Kansas City 1
Kingsville 1
La Plata 1
Manila 1
Mauá 1
Melbourne 1
Montreal 1
New York 1
Portsmouth 1
Praia Grande 1
Prata 1
Quito 1
Quzhou 1
Rome 1
Salgueiro 1
Salvador 1
Seoul 1
Sharjah 1
Totale 1.064
Nome #
Analysis of the Performance of n-Type FinFETs With Strained SiGe Channel 153
On the Optimization of SiGe and III-V Compound Hetero-Junction Tunnel FET Devices 141
Toward computationally efficient Multi-Subband Monte Carlo simulations of nanoscale MOSFETs 128
An Improved Semi-Classical Model to Investigate Tunnel-FET performance 126
Multi-Subband Semi-classical Simulation of n-type Tunnel-FETs 120
Electron-Hole Bilayer TFET: Experiments and Comments 111
Calibrated multi-subband Monte Carlo modeling of tunnel-FETs in silicon and III–V channel materials 105
Device variability and correlation control by automated tuning of SPICE cards to PCM measurements 93
Modelling, Simulation and Characterization of Tunnel-FET Devices for Ultra-low Power Electronics 92
Challenges and opportunities in the design of Tunnel FETs: materials, device architectures, and defects 86
First Demonstration of Strained SiGe Nanowires TFETs with ION beyond 700μA/μm 83
High Performance SiGe Nanowire Tunnel FETs: Low Temperature Characterization for Device Process Optimization 79
An Improved Semi-classical Approach for Simulating Tunnel-FETs 76
Prognostic nutritional index predicts toxicity in head and neck cancer patients treated with definitive radiotherapy in association with chemotherapy 38
Radical hemithorax radiotherapy induces an increase in circulating PD-1+ T lymphocytes and in the soluble levels of PD-L1 in malignant pleural mesothelioma patients: a possible synergy with PD-1/PD-L1 targeting treatment? 25
Totale 1.456
Categoria #
all - tutte 5.310
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 5.310


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/202027 0 0 0 0 0 0 0 0 0 0 6 21
2020/2021147 2 23 0 20 7 24 5 14 21 4 21 6
2021/202299 5 8 3 2 0 11 3 4 2 19 27 15
2022/202379 14 7 11 3 2 17 0 5 10 3 0 7
2023/202483 10 6 7 0 11 20 2 17 6 1 0 3
2024/2025253 9 17 16 14 26 16 22 24 23 31 55 0
Totale 1.456