REVELANT, Alberto
 Distribuzione geografica
Continente #
NA - Nord America 985
EU - Europa 192
AS - Asia 102
Continente sconosciuto - Info sul continente non disponibili 1
OC - Oceania 1
Totale 1.281
Nazione #
US - Stati Uniti d'America 983
UA - Ucraina 76
DE - Germania 44
CN - Cina 43
SG - Singapore 31
IT - Italia 26
FI - Finlandia 25
IE - Irlanda 11
IN - India 11
KR - Corea 4
PK - Pakistan 4
ES - Italia 3
BD - Bangladesh 2
CA - Canada 2
CZ - Repubblica Ceca 2
GB - Regno Unito 2
TW - Taiwan 2
VN - Vietnam 2
AT - Austria 1
AU - Australia 1
CH - Svizzera 1
EU - Europa 1
GE - Georgia 1
NL - Olanda 1
PH - Filippine 1
TR - Turchia 1
Totale 1.281
Città #
Woodbridge 162
Houston 135
Fairfield 99
Ann Arbor 85
Ashburn 57
Seattle 57
Jacksonville 51
Wilmington 37
Cambridge 35
Dearborn 34
Chandler 32
Singapore 26
Beijing 16
Boardman 14
Munich 14
Princeton 14
Dublin 11
Udine 9
San Diego 6
Nanjing 5
Cagliari 4
Gujrat 4
Kunming 4
Norwalk 4
Barcelona 3
Hefei 3
Pune 3
Austin 2
Dhubri 2
Dong Ket 2
Kakkanad 2
Los Angeles 2
Nanchang 2
Ogden 2
Ottawa 2
Ponzano 2
Prague 2
Rūpnagar 2
Shenyang 2
Taipei 2
Ulju-gun 2
Ulsan 2
Amsterdam 1
Baotou 1
Changsha 1
Chengdu 1
Coimbatore 1
Des Moines 1
Dumaguete 1
Durham 1
Garching 1
Guangzhou 1
Halle 1
Hebei 1
Helsinki 1
Huntington Station 1
Indiana 1
Izmir 1
Jinan 1
Melbourne 1
New York 1
Quzhou 1
Rome 1
Shanghai 1
Shenzhen 1
Simi Valley 1
Tbilisi 1
Trieste 1
Wuhan 1
Yellow Springs 1
Zurich 1
Totale 983
Nome #
Analysis of the Performance of n-Type FinFETs With Strained SiGe Channel 144
On the Optimization of SiGe and III-V Compound Hetero-Junction Tunnel FET Devices 132
Toward computationally efficient Multi-Subband Monte Carlo simulations of nanoscale MOSFETs 118
An Improved Semi-Classical Model to Investigate Tunnel-FET performance 116
Multi-Subband Semi-classical Simulation of n-type Tunnel-FETs 114
Electron-Hole Bilayer TFET: Experiments and Comments 103
Calibrated multi-subband Monte Carlo modeling of tunnel-FETs in silicon and III–V channel materials 94
Device variability and correlation control by automated tuning of SPICE cards to PCM measurements 80
Challenges and opportunities in the design of Tunnel FETs: materials, device architectures, and defects 78
First Demonstration of Strained SiGe Nanowires TFETs with ION beyond 700μA/μm 73
High Performance SiGe Nanowire Tunnel FETs: Low Temperature Characterization for Device Process Optimization 72
An Improved Semi-classical Approach for Simulating Tunnel-FETs 67
Modelling, Simulation and Characterization of Tunnel-FET Devices for Ultra-low Power Electronics 66
Prognostic nutritional index predicts toxicity in head and neck cancer patients treated with definitive radiotherapy in association with chemotherapy 28
Totale 1.285
Categoria #
all - tutte 4.378
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 4.378


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/2020231 0 0 0 0 22 48 36 42 24 32 6 21
2020/2021147 2 23 0 20 7 24 5 14 21 4 21 6
2021/202299 5 8 3 2 0 11 3 4 2 19 27 15
2022/202379 14 7 11 3 2 17 0 5 10 3 0 7
2023/202483 10 6 7 0 11 20 2 17 6 1 0 3
2024/202582 9 17 16 14 26 0 0 0 0 0 0 0
Totale 1.285