Sfoglia per Autore
Substrate Enhanced Gate Currents in CMOS Devices
2000-01-01 Driussi, Francesco; Esseni, David; Selmi, Luca; F., Piazza; Sangiorgi, Enrico
Hot carrier degradation and damage profiling of cmos devices with biased substrates
2000-01-01 Driussi, Francesco; Esseni, David; Piazza, F.; Selmi, Luca
Observation of a new hole gate current component in p+-poly gate p-channel mosfet's
2000-01-01 Driussi, Francesco; Esseni, David; Selmi, Luca; Piazza, F.
Substrate enhanced degradation of cmos devices
2000-01-01 Driussi, Francesco; Esseni, David; Selmi, Luca; F., Piazza
Hot Hole Gate Current in Surface Channel p-MOSFETs
2001-01-01 Driussi, Francesco; Esseni, David; Selmi, Luca; Piazza, F.
Damage generation and location in n- and p-MOSFETs biased in the substrate-enhanced gate current regime
2002-01-01 Driussi, Francesco; Esseni, David; Selmi, Luca; Fausto, Piazza
Spectroscopic Analysis of Trap Assisted Tunneling on This Oxides by Means of Substrate Hot Electron Injection Experiments
2002-01-01 Driussi, Francesco; Iob, R.; Esseni, David; Selmi, Luca; VAN SCHAIJK, R.; Widdershoven, F.
Nitride Layer Influence on the Hydrogen Anneal of Interface Dangling Bonds
2003-01-01 Driussi, Francesco; Duuren, M. J.; VAN SCHAIJK, R.
On the electrical monitor for device degradation in the CHISEL stress regime
2003-01-01 Driussi, Francesco; Esseni, David; Selmi, Luca
A new Statistical Model to extract the Stress Induced Oxide Trap number and the Probability Density Distribution of the Gate Current Produced by a Single Trap
2003-01-01 Driussi, Francesco; Widdershoven, F.; Esseni, David; VAN DUUREN, M. J.
Performance, degradation monitors, and reliability of the CHISEL injection regime
2004-01-01 Driussi, Francesco; Esseni, David; Selmi, Luca
Experimental Evidence and Statistical Modeling of Cooperating Defects in Stressed Oxides
2004-01-01 Driussi, Francesco; Esseni, David; Selmi, Luca; VAN DUUREN, M. J.; Widdershoven, F.
Investigation of the Energy Distribution of Stress-Induced Oxide Traps by Numerical Analysis of the TAT of HEs
2004-01-01 Driussi, Francesco; Iob, Romano; Esseni, David; Selmi, Luca; VAN SCHAIJK, R.; Widdershoven, F.
Experimental Characterization of Statistically Independent Defects in Gate Dielectrics - Part II: Experimental Results on Flash Memory Arrays
2005-01-01 Driussi, Francesco; F., Widdershoven; Esseni, David; Selmi, Luca; AND M., VAN DUUREN
Gate Current in Stacked Dielectrics for Advanced FLASH EEPROM cells
2005-01-01 Driussi, Francesco; Marcuzzi, S; Palestri, Pierpaolo; Selmi, Luca
Experimental Characterization of Statistically Independent Defects in Gate Dielectrics - Part I: Description and Validation of the Model
2005-01-01 Driussi, Francesco; F., Widdershoven; Esseni, David; Selmi, Luca; M., VAN DUUREN
New Charge Pumping model for the analysis of the spatial trap distribution in the nitride layer of SONOS devices
2005-01-01 Arreghini, Antonio; Driussi, Francesco; Esseni, David; Selmi, Luca; M., VAN DUUREN; R., VAN SCHAIJK
Trade-off between Electron Velocity and Density of States in Ballistic nano-MOSFETs
2005-01-01 DE MICHIELIS, Marco; Driussi, Francesco; Esseni, David
On the Passivation of Interface States in SONOS Test Structures: Impact of Device Layout and Annealing Process
2006-01-01 Driussi, Francesco; Selmi, Luca; Akil, N.; VAN DUUREN, M. J.; VAN SCHAIJK, R.
Does Multi Trap Assisted Tunneling Explain the Oxide Thickness Dependence of the Statistics of SILC in FLASH Memory Arrays ?
2006-01-01 Vianello, E; Driussi, Francesco; Esseni, David; Selmi, Luca; VAN DUUREN, M; Widdershoven, F.
Experimental Extraction of Charge Centroid and of Charge Type in the P/E operation of SONOS Memory Cells
2006-01-01 Arreghini, Antonio; Driussi, Francesco; Esseni, David; Selmi, Luca; VAN DUUREN, M. J.; VAN SCHAIJK, R.
Experimental and Simulation Study of the Biaxial Strain and Temperature dependence of the Electron Mobility Enhancement in Si MOSFETs
2007-01-01 Driussi, Francesco; Esseni, David; Selmi, Luca; P. E., Hellstrom; G., Malm; J., Hallstedt; M., Ostling; T. J., Grasby; D. R., Leadley; X., Mescot
Fabrication, Characterization and Modeling of Strained SOI MOSFETs with Very Large Effective Mobility
2007-01-01 Driussi, Francesco; Esseni, David; Selmi, Luca; M., Schmidt; M. C., Lemme; H., Kurz; D., Buca; S., Mantl; M., Luysberg; R., Loo; D., Nguyen; M., Reiche
Explanation of SILC probability density distributions with nonuniform generation of traps in the tunnel oxide of flash memory arrays
2007-01-01 Vianello, Elisa; Driussi, Francesco; Esseni, David; Selmi, Luca; Widdershoven, F; VAN DUUREN, M. J.
Characterization and Modeling of long term retention in SONOS Non Volatile Memories
2007-01-01 Arreghini, A; Akil, N; Driussi, Francesco; Esseni, David; Selmi, Luca; VAN DUUREN, M. J.
Comparison of modeling approaches for the capacitance-voltage and current voltage characteristics of advanced gate stacks
2007-01-01 Palestri, Pierpaolo; N., Barin; D., Brunel; C., Busseret; A., Campera; P. A., Childs; Driussi, Francesco; C., Fiegna; G., Fiori; R., Gusmeroli; G., Iannaccone; M., Karner; H., Kosina; A. L., Lacaita; E., Langer; B., Majkusiak; C., Monzio Compagnoni; A., Poncet; E., Sangiorgi; Selmi, Luca; A. S., Spinelli; J., Walczak
Analytical models for the insight into the use of alternative channel materials in ballistic nano-MOSFETs
2007-01-01 DE MICHIELIS, Marco; Esseni, David; Driussi, Francesco
Impact of the Charge Transport in the Conduction Band on the Retention of Si-Nitride Based Memories
2008-01-01 E., Vianello; Driussi, Francesco; Palestri, Pierpaolo; A., Arreghini; Esseni, David; Selmi, Luca; N., Akil; M., van Duuren; D. S., Golubović
Programme and retention characteristics of SONOS memory arrays with layered tunnel barrier
2008-01-01 D. S., Golubović; E., Vianello; A., Arreghini; Driussi, Francesco; M. J., van Duuren; N., Akil; Selmi, Luca; Esseni, David
On the electron mobility enhancement in biaxially strained Si MOSFETs
2008-01-01 Driussi, Francesco; Esseni, David; Selmi, Luca; P. E., Hellström; G., Malm; J., Hållstedt; M., Östling; T. J., Grasby; D. R., Leadley; X., Mescot
Experimental characterization of the vertical position of the trapped charge in Si nitride-based nonvolatile memory cells
2008-01-01 Arreghini, A; Driussi, F; Vianello, E; Esseni, D; VAN DUUREN, M. J.; Gobulovic, D. S.; Akil, N; VAN SCHAIJK, R
Impact of Device Layout and Annealing Process During the Passivation of Interface States in Presence of Silicon Nitride Layers
2008-01-01 Driussi, Francesco; Selmi, Luca; N., Akil; M. J., van Duuren; R., van Schaijk
Long term charge retention dynamics of SONOS cells
2008-01-01 Arreghini, A; Akil, N; Driussi, Francesco; Esseni, David; Selmi, Luca; VAN DUUREN, M. J.
Revised analysis of Coulomb scattering limited mobility in biaxially strained silicon MOSFETs
2009-01-01 Driussi, Francesco; Esseni, David
New insight on the charge trapping mechanisms of SiN--based memory by atomistic simulations and electrical modeling
2009-01-01 Vianello, Elisa; Perniola, L; Blaise, P; Molas, G; Colonna, J. P.; Driussi, Francesco; Palestri, Pierpaolo; Esseni, David; Selmi, Luca; Rochat, N; Licitra, C; Lafond, D; Kies, R; Reimbold, G; DE SALVO, B; Boulanger, F.
Experimental and Simulation Analysis of Program/Retention Transients in Silicon Nitride-Based NVM Cells
2009-01-01 Vianello, Elisa; Driussi, Francesco; Arreghini, Antonio; Palestri, Pierpaolo; Esseni, David; Selmi, Luca; N., Akil; M. J., van Duuren; D. S., Golubovic
Simulation Study of Coulomb Mobility in Strained Silicon
2009-01-01 Driussi, Francesco; Esseni, David
Mobility Extraction of UTB n-MOSFETs down to 0.9 nm SOI thickness
2009-01-01 Schmidt, M; Lemme, M. C.; Gottlob, H. D. B.; Kurz, H; Driussi, Francesco; Selmi, Luca
Program efficiency and high temperature retention of SiN/high-K based memories
2009-01-01 Vianello, Elena; M., Bocquet; Driussi, Francesco; L., Perniola; G., Molas; Selmi, Luca
Analysis of nitride storage non-volatile memories with HfSiO(x) blocking dielectric and TiN metal gate for low power embedded applications
2009-01-01 Golubovic, Ds; van Duuren, Mj; Akil, N; Arreghini, Antonio; Driussi, Francesco
Mobility extraction in SOI MOSFETs with sub 1 nm body thickness
2009-01-01 Schmidt, M; Lemme, Mc; Gottlob, Hdb; Driussi, Francesco; Selmi, Luca; Kurz, H.
A Consistent Explanation of the Role of the SiN Composition on the Program/Retention Characteristics of MANOS and NROM like Memories
2010-01-01 Vianello, Elisa; Nowak, E; Perniola, L; Driussi, Francesco; Blaise, P; Molas, G; DE SALVO, B; Selmi, Luca
Understanding the mobility reduction in MOSFETs featuring high-κ dielectrics
2010-01-01 Toniutti, Paolo; DE MICHIELIS, Marco; Palestri, Pierpaolo; Driussi, Francesco; Esseni, David; Selmi, Luca
A simulation study of the Punch-through Assisted Hot Holes Injection mechanism for non-volatile-memory cells
2010-01-01 Iellina, Matteo; Palestri, Pierpaolo; Akil, N.; VAN DUUREN, M.; Driussi, Francesco; Esseni, David; Selmi, Luca
Experimental and simulation study of the program efficiency of HfO2 based charge trapping memories
2010-01-01 Spiga, S.; Congedo, G.; Russo, U.; Lamperti, A.; Salicio, O.; Driussi, Francesco; Vianello, Elisa
Direct Probing of Trapped Charge Dynamics in SiN by Kelvin Force Microscopy
2010-01-01 Vianello, Elisa; Nowak, E; Mariolle, D; Chevalier, N; Perniola, L; Molas, G; Colonna, J; Driussi, Francesco; Selmi, Luca
Explanation of the Charge-Trapping Properties of Silicon Nitride Storage Layers for NVM Devices Part I: Experimental Evidences From Physical and Electrical Characterizations
2011-01-01 Vianello, Elisa; Driussi, Francesco; Perniola, L; Molas, G; Colonna, J. P.; DE SALVO, B; Selmi, Luca
Experimental procedure for accurate trap density study by low frequency charge pumping measurements
2011-01-01 Datta, A; Driussi, Francesco; Esseni, David; Molas, G; Nowak, E.
Explanation of the Charge Trapping Properties of Silicon Nitride Storage Layers for NVMs - Part II: Atomistic and Electrical Modeling
2011-01-01 Vianello, Elisa; Driussi, Francesco; Blaise, P.; Palestri, Pierpaolo; Esseni, David; Perniola, L.; Molas, G.; De Salvo, B.; Selmi, Luca
A Quantitative Error Analysis of the Mobility Extraction According to the Matthiessen Rule in Advanced MOS Transistors
2011-01-01 Esseni, David; Driussi, Francesco
Titolo | Data di pubblicazione | Autore(i) | File |
---|---|---|---|
Substrate Enhanced Gate Currents in CMOS Devices | 1-gen-2000 | Driussi, Francesco; Esseni, David; Selmi, Luca; F., Piazza; Sangiorgi, Enrico | |
Hot carrier degradation and damage profiling of cmos devices with biased substrates | 1-gen-2000 | Driussi, Francesco; Esseni, David; Piazza, F.; Selmi, Luca | |
Observation of a new hole gate current component in p+-poly gate p-channel mosfet's | 1-gen-2000 | Driussi, Francesco; Esseni, David; Selmi, Luca; Piazza, F. | |
Substrate enhanced degradation of cmos devices | 1-gen-2000 | Driussi, Francesco; Esseni, David; Selmi, Luca; F., Piazza | |
Hot Hole Gate Current in Surface Channel p-MOSFETs | 1-gen-2001 | Driussi, Francesco; Esseni, David; Selmi, Luca; Piazza, F. | |
Damage generation and location in n- and p-MOSFETs biased in the substrate-enhanced gate current regime | 1-gen-2002 | Driussi, Francesco; Esseni, David; Selmi, Luca; Fausto, Piazza | |
Spectroscopic Analysis of Trap Assisted Tunneling on This Oxides by Means of Substrate Hot Electron Injection Experiments | 1-gen-2002 | Driussi, Francesco; Iob, R.; Esseni, David; Selmi, Luca; VAN SCHAIJK, R.; Widdershoven, F. | |
Nitride Layer Influence on the Hydrogen Anneal of Interface Dangling Bonds | 1-gen-2003 | Driussi, Francesco; Duuren, M. J.; VAN SCHAIJK, R. | |
On the electrical monitor for device degradation in the CHISEL stress regime | 1-gen-2003 | Driussi, Francesco; Esseni, David; Selmi, Luca | |
A new Statistical Model to extract the Stress Induced Oxide Trap number and the Probability Density Distribution of the Gate Current Produced by a Single Trap | 1-gen-2003 | Driussi, Francesco; Widdershoven, F.; Esseni, David; VAN DUUREN, M. J. | |
Performance, degradation monitors, and reliability of the CHISEL injection regime | 1-gen-2004 | Driussi, Francesco; Esseni, David; Selmi, Luca | |
Experimental Evidence and Statistical Modeling of Cooperating Defects in Stressed Oxides | 1-gen-2004 | Driussi, Francesco; Esseni, David; Selmi, Luca; VAN DUUREN, M. J.; Widdershoven, F. | |
Investigation of the Energy Distribution of Stress-Induced Oxide Traps by Numerical Analysis of the TAT of HEs | 1-gen-2004 | Driussi, Francesco; Iob, Romano; Esseni, David; Selmi, Luca; VAN SCHAIJK, R.; Widdershoven, F. | |
Experimental Characterization of Statistically Independent Defects in Gate Dielectrics - Part II: Experimental Results on Flash Memory Arrays | 1-gen-2005 | Driussi, Francesco; F., Widdershoven; Esseni, David; Selmi, Luca; AND M., VAN DUUREN | |
Gate Current in Stacked Dielectrics for Advanced FLASH EEPROM cells | 1-gen-2005 | Driussi, Francesco; Marcuzzi, S; Palestri, Pierpaolo; Selmi, Luca | |
Experimental Characterization of Statistically Independent Defects in Gate Dielectrics - Part I: Description and Validation of the Model | 1-gen-2005 | Driussi, Francesco; F., Widdershoven; Esseni, David; Selmi, Luca; M., VAN DUUREN | |
New Charge Pumping model for the analysis of the spatial trap distribution in the nitride layer of SONOS devices | 1-gen-2005 | Arreghini, Antonio; Driussi, Francesco; Esseni, David; Selmi, Luca; M., VAN DUUREN; R., VAN SCHAIJK | |
Trade-off between Electron Velocity and Density of States in Ballistic nano-MOSFETs | 1-gen-2005 | DE MICHIELIS, Marco; Driussi, Francesco; Esseni, David | |
On the Passivation of Interface States in SONOS Test Structures: Impact of Device Layout and Annealing Process | 1-gen-2006 | Driussi, Francesco; Selmi, Luca; Akil, N.; VAN DUUREN, M. J.; VAN SCHAIJK, R. | |
Does Multi Trap Assisted Tunneling Explain the Oxide Thickness Dependence of the Statistics of SILC in FLASH Memory Arrays ? | 1-gen-2006 | Vianello, E; Driussi, Francesco; Esseni, David; Selmi, Luca; VAN DUUREN, M; Widdershoven, F. | |
Experimental Extraction of Charge Centroid and of Charge Type in the P/E operation of SONOS Memory Cells | 1-gen-2006 | Arreghini, Antonio; Driussi, Francesco; Esseni, David; Selmi, Luca; VAN DUUREN, M. J.; VAN SCHAIJK, R. | |
Experimental and Simulation Study of the Biaxial Strain and Temperature dependence of the Electron Mobility Enhancement in Si MOSFETs | 1-gen-2007 | Driussi, Francesco; Esseni, David; Selmi, Luca; P. E., Hellstrom; G., Malm; J., Hallstedt; M., Ostling; T. J., Grasby; D. R., Leadley; X., Mescot | |
Fabrication, Characterization and Modeling of Strained SOI MOSFETs with Very Large Effective Mobility | 1-gen-2007 | Driussi, Francesco; Esseni, David; Selmi, Luca; M., Schmidt; M. C., Lemme; H., Kurz; D., Buca; S., Mantl; M., Luysberg; R., Loo; D., Nguyen; M., Reiche | |
Explanation of SILC probability density distributions with nonuniform generation of traps in the tunnel oxide of flash memory arrays | 1-gen-2007 | Vianello, Elisa; Driussi, Francesco; Esseni, David; Selmi, Luca; Widdershoven, F; VAN DUUREN, M. J. | |
Characterization and Modeling of long term retention in SONOS Non Volatile Memories | 1-gen-2007 | Arreghini, A; Akil, N; Driussi, Francesco; Esseni, David; Selmi, Luca; VAN DUUREN, M. J. | |
Comparison of modeling approaches for the capacitance-voltage and current voltage characteristics of advanced gate stacks | 1-gen-2007 | Palestri, Pierpaolo; N., Barin; D., Brunel; C., Busseret; A., Campera; P. A., Childs; Driussi, Francesco; C., Fiegna; G., Fiori; R., Gusmeroli; G., Iannaccone; M., Karner; H., Kosina; A. L., Lacaita; E., Langer; B., Majkusiak; C., Monzio Compagnoni; A., Poncet; E., Sangiorgi; Selmi, Luca; A. S., Spinelli; J., Walczak | |
Analytical models for the insight into the use of alternative channel materials in ballistic nano-MOSFETs | 1-gen-2007 | DE MICHIELIS, Marco; Esseni, David; Driussi, Francesco | |
Impact of the Charge Transport in the Conduction Band on the Retention of Si-Nitride Based Memories | 1-gen-2008 | E., Vianello; Driussi, Francesco; Palestri, Pierpaolo; A., Arreghini; Esseni, David; Selmi, Luca; N., Akil; M., van Duuren; D. S., Golubović | |
Programme and retention characteristics of SONOS memory arrays with layered tunnel barrier | 1-gen-2008 | D. S., Golubović; E., Vianello; A., Arreghini; Driussi, Francesco; M. J., van Duuren; N., Akil; Selmi, Luca; Esseni, David | |
On the electron mobility enhancement in biaxially strained Si MOSFETs | 1-gen-2008 | Driussi, Francesco; Esseni, David; Selmi, Luca; P. E., Hellström; G., Malm; J., Hållstedt; M., Östling; T. J., Grasby; D. R., Leadley; X., Mescot | |
Experimental characterization of the vertical position of the trapped charge in Si nitride-based nonvolatile memory cells | 1-gen-2008 | Arreghini, A; Driussi, F; Vianello, E; Esseni, D; VAN DUUREN, M. J.; Gobulovic, D. S.; Akil, N; VAN SCHAIJK, R | |
Impact of Device Layout and Annealing Process During the Passivation of Interface States in Presence of Silicon Nitride Layers | 1-gen-2008 | Driussi, Francesco; Selmi, Luca; N., Akil; M. J., van Duuren; R., van Schaijk | |
Long term charge retention dynamics of SONOS cells | 1-gen-2008 | Arreghini, A; Akil, N; Driussi, Francesco; Esseni, David; Selmi, Luca; VAN DUUREN, M. J. | |
Revised analysis of Coulomb scattering limited mobility in biaxially strained silicon MOSFETs | 1-gen-2009 | Driussi, Francesco; Esseni, David | |
New insight on the charge trapping mechanisms of SiN--based memory by atomistic simulations and electrical modeling | 1-gen-2009 | Vianello, Elisa; Perniola, L; Blaise, P; Molas, G; Colonna, J. P.; Driussi, Francesco; Palestri, Pierpaolo; Esseni, David; Selmi, Luca; Rochat, N; Licitra, C; Lafond, D; Kies, R; Reimbold, G; DE SALVO, B; Boulanger, F. | |
Experimental and Simulation Analysis of Program/Retention Transients in Silicon Nitride-Based NVM Cells | 1-gen-2009 | Vianello, Elisa; Driussi, Francesco; Arreghini, Antonio; Palestri, Pierpaolo; Esseni, David; Selmi, Luca; N., Akil; M. J., van Duuren; D. S., Golubovic | |
Simulation Study of Coulomb Mobility in Strained Silicon | 1-gen-2009 | Driussi, Francesco; Esseni, David | |
Mobility Extraction of UTB n-MOSFETs down to 0.9 nm SOI thickness | 1-gen-2009 | Schmidt, M; Lemme, M. C.; Gottlob, H. D. B.; Kurz, H; Driussi, Francesco; Selmi, Luca | |
Program efficiency and high temperature retention of SiN/high-K based memories | 1-gen-2009 | Vianello, Elena; M., Bocquet; Driussi, Francesco; L., Perniola; G., Molas; Selmi, Luca | |
Analysis of nitride storage non-volatile memories with HfSiO(x) blocking dielectric and TiN metal gate for low power embedded applications | 1-gen-2009 | Golubovic, Ds; van Duuren, Mj; Akil, N; Arreghini, Antonio; Driussi, Francesco | |
Mobility extraction in SOI MOSFETs with sub 1 nm body thickness | 1-gen-2009 | Schmidt, M; Lemme, Mc; Gottlob, Hdb; Driussi, Francesco; Selmi, Luca; Kurz, H. | |
A Consistent Explanation of the Role of the SiN Composition on the Program/Retention Characteristics of MANOS and NROM like Memories | 1-gen-2010 | Vianello, Elisa; Nowak, E; Perniola, L; Driussi, Francesco; Blaise, P; Molas, G; DE SALVO, B; Selmi, Luca | |
Understanding the mobility reduction in MOSFETs featuring high-κ dielectrics | 1-gen-2010 | Toniutti, Paolo; DE MICHIELIS, Marco; Palestri, Pierpaolo; Driussi, Francesco; Esseni, David; Selmi, Luca | |
A simulation study of the Punch-through Assisted Hot Holes Injection mechanism for non-volatile-memory cells | 1-gen-2010 | Iellina, Matteo; Palestri, Pierpaolo; Akil, N.; VAN DUUREN, M.; Driussi, Francesco; Esseni, David; Selmi, Luca | |
Experimental and simulation study of the program efficiency of HfO2 based charge trapping memories | 1-gen-2010 | Spiga, S.; Congedo, G.; Russo, U.; Lamperti, A.; Salicio, O.; Driussi, Francesco; Vianello, Elisa | |
Direct Probing of Trapped Charge Dynamics in SiN by Kelvin Force Microscopy | 1-gen-2010 | Vianello, Elisa; Nowak, E; Mariolle, D; Chevalier, N; Perniola, L; Molas, G; Colonna, J; Driussi, Francesco; Selmi, Luca | |
Explanation of the Charge-Trapping Properties of Silicon Nitride Storage Layers for NVM Devices Part I: Experimental Evidences From Physical and Electrical Characterizations | 1-gen-2011 | Vianello, Elisa; Driussi, Francesco; Perniola, L; Molas, G; Colonna, J. P.; DE SALVO, B; Selmi, Luca | |
Experimental procedure for accurate trap density study by low frequency charge pumping measurements | 1-gen-2011 | Datta, A; Driussi, Francesco; Esseni, David; Molas, G; Nowak, E. | |
Explanation of the Charge Trapping Properties of Silicon Nitride Storage Layers for NVMs - Part II: Atomistic and Electrical Modeling | 1-gen-2011 | Vianello, Elisa; Driussi, Francesco; Blaise, P.; Palestri, Pierpaolo; Esseni, David; Perniola, L.; Molas, G.; De Salvo, B.; Selmi, Luca | |
A Quantitative Error Analysis of the Mobility Extraction According to the Matthiessen Rule in Advanced MOS Transistors | 1-gen-2011 | Esseni, David; Driussi, Francesco |
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